SI2367DS [VISHAY]
P-Channel 20 V (D-S) MOSFET; P沟道20 V （D -S ）的MOSFET
| 型号： | SI2367DS |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 20 V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE Device Model Si2367DS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
DESCRIPTION
CHARACTERISTICS
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the
- 55 °C to + 125 °C temperature ranges under the pulsed
0 V to 5 V gate drive. The saturated output impedance is best
fit at the gate bias near the threshold voltage. A novel
gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
D
C
GD
R1
M
2
3
DBD
Gy
Gx
–
+
G
R
G
M
1
ETCV
C
GS
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 65140
S09-1760-Rev. A, 14-Sep-09
www.vishay.com
1
SPICE Device Model Si2367DS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
SIMULATED MEASURED
PARAMETER
SYMBOL
TEST CONDITIONS
DATA
DATA
UNIT
Static
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
VDS = VGS, ID = - 250 µA
VGS = - 4.5 V, ID = - 2.5 A
VGS = - 2.5 V, ID = - 2 A
VDS = - 10 V, ID = - 2.5 A
IS = - 2 A
0.5
-
V
0.052
0.070
7.3
0.055
0.071
7.5
Drain-Source On-State Resistancea
Ω
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
S
V
VSD
- 0.76
- 0.79
Input Capacitance
Ciss
Coss
Crss
561
112
89
561
112
89
Output Capacitance
Reverse Transfer Capacitance
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 2.5 A
pF
nC
12
15
Total Gate Charge
Qg
7.4
1.0
2.5
9
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
V
DS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A
1.0
2.5
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 65140
S09-1760-Rev. A, 14-Sep-09
SPICE Device Model Si2367DS
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted
2.5
2.0
1.5
1.0
0.5
0.0
15
12
9
V
= 5 V, 3.5 V, 3 V, 2.5 V
GS
T
= 125 °C
J
T
= - 55 °C
J
V
= 2 V
GS
6
T
= 25 °C
J
3
V
= 1.5 V
GS
0
0.0
0.6
1.2
1.8
2.4
3.0
0.0
0.4
0.8
1.2
1.6
2.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
0.20
0.16
0.12
0.08
0.04
0.00
1200
960
720
480
240
0
C
iss
V
= 2.5 V
= 4.5 V
GS
C
oss
V
GS
C
rss
0.0
1.6
3.2
4.8
6.4
8.0
0
4
8
12
16
20
ID - Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
8.0
10
1
I
= 2.5 A
D
6.4
4.8
3.2
1.6
0.0
V
= 10 V
DS
T
= 25 °C
T
= 150 °C
J
J
0.1
V
= 15 V
DS
0.01
0.001
0.0
3.4
6.8
10.2
13.6
17.0
0
0.2
0.4
0.6
0.8
1
1.2
Q
- Total Gate Charge (nC)
VSD - Source-to-Drain Voltage (V)
g
Note
Dots and squares represent measured data.
Document Number: 65140
S09-1760-Rev. A, 14-Sep-09
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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1
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