SI3446DV-E3 [VISHAY]
TRANSISTOR 5.3 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6, FET General Purpose Power;
| 型号： | SI3446DV-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 5.3 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6, FET General Purpose Power 脉冲 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3446DV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.045 @ V = 4.5 V
"5.3
"4.4
GS
20
0.065 @ V = 2.5
GS
V
(1, 2, 5, 6) D
TSOP-6
Top View
1
2
3
6
5
(3) G
3 mm
4
(4) S
2.85 mm
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
"20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
GS
V
V
"12
T
= 25_C
= 70_C
"5.3
"4.2
"20
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
"1.7
2.0
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
_C/W
62.5
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70715
S-54952—Rev. A, 06-Oct-97
www.vishay.com S FaxBack 408-970-5600
2-1
Si3446DV
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "12 V
"100
nA
GSS
DS
GS
V
= 20 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 20 V, V = 0 V, T = 70_C
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 4.5 V
10
A
D(on)
GS
V
= 4.5 V, I = 5.3 A
0.032
0.045
0.045
0.065
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 2.5 V, I = 4.4 A
D
GS
a
Forward Transconductance
g
20
S
V
V
= 10 V, I = 5.3 A
D
fs
DS
a
Diode Forward Voltage
V
SD
I
S
= 1.7 A, V = 0 V
1.2
20
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
10
2.5
2.2
30
50
65
35
60
g
Q
gs
Q
gd
V
= 10 V, V = 4.5 V, I = 5.3 A
nC
ns
DS
GS
D
t
50
80
d(on)
t
r
V
DD
= 10 V, R = 10 W
L
= 4.5 V, R = 6 W
GEN G
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
100
60
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
90
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70715
S-54952—Rev. A, 06-Oct-97
www.vishay.com S FaxBack 408-970-5600
2-2
Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
12
8
V
GS
= 5, 4.5, 4, 3.5, 3 V
16
12
8
2.5 V
2 V
T
C
= 125_C
4
4
25_C
1, 1.5 V
–55_C
0
0
0
1
2
3
4
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.10
0.08
0.06
0.04
0.02
0
1500
1200
900
600
300
0
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 5.3 A
V
GS
= 4.5 V
DS
I
D
I = 5.3 A
D
0
2
4
6
8
10
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70715
S-54952—Rev. A, 06-Oct-97
www.vishay.com S FaxBack 408-970-5600
2-3
Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
20
I
D
= 5.3 A
0.08
0.06
0.04
0.02
0
10
T = 150_C
J
T = 25_C
J
1
0
0.25
0.50
0.75
1.00
1.25
1.50
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
25
0.4
0.2
20
15
10
5
I
D
= 250 Am
–0.0
–0.2
–0.4
–0.6
0
–50 –25
0
25
50
75
100 125 150
0.01
0.10
1.00
10.00
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 62.5_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Document Number: 70715
S-54952—Rev. A, 06-Oct-97
www.vishay.com S FaxBack 408-970-5600
2-4
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