SI3850ADV [VISHAY]
Complementary MOSFET Half-Bridge (N- and P-Channel); 互补MOSFET半桥（ N和P通道）
| 型号： | SI3850ADV |
| 厂家： | 
VISHAY |
| 描述： | Complementary MOSFET Half-Bridge (N- and P-Channel) |
| 文件： | 总9页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3850ADV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
FEATURES
100 % Rg Tested
PRODUCT SUMMARY
•
VDS (V)
rDS(on) (Ω)
ID (A)
1.4
0.300 at VGS = 4.5 V
0.410 at VGS = 3.0 V
0.640 at VGS = - 4.5 V
0.980 at VGS = - 3.0 V
RoHS
N-Channel
P-Channel
20
1.2
COMPLIANT
- 0.96
- 0.78
- 20
S
2
TSOP-6
Top View
G
G
2
G
1
S
1
1
2
3
6
D
D
D
5
4
G
2
S
2
1
Ordering Information:
Si3850ADV-T1-E3 (Lead (Pb)-free)
S
1
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
- 20
V
VGS
12
TA = 25 °C
TA = 70 °C
1.4
1.1
3.5
0.9
- 0.96
- 0.77
- 2.0
ID
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
A
IDM
IS
- 0.9
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
T
A = 25 °C
A = 70 °C
1.08
0.70
PD
W
T
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
N- or P-Channel
Symbol
Unit
Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board,
≤ 10 sec)
RthJA
°C/W
115
Notes:
Maximum under Steady State condition is 150 °C/W.
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
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1
Si3850ADV
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS = VGS, ID = 250 µA
N-Ch
P-Ch
0.6
1.5
- 1.5
100
1
VGS(th)
IGSS
Gate Threshold Voltage
Gate-Body Leakage
V
V
DS = VGS, ID = - 250 µA
VDS = 0 V, VGS 12 V
VDS = 20 V, VGS = 0 V
- 0.6
=
nA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
DS = - 20 V, VGS = 0 V
- 1
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
µA
A
V
DS = 20 V, VGS = 0 V, TJ = 70 °C
10
V
DS = - 20 V, VGS = 0 V, TJ = 70 °C
VDS = 5 V, VGS = 4.5 V
- 10
3.0
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 0.5 A
- 1.5
0.240
0.510
0.325
0.780
1.8
0.300
0.640
0.410
0.980
V
GS = - 4.5 V, ID = - 0.5 A
GS = 3.0 V, ID = 0.5 A
GS = - 3.0 V, ID = - 0.5 A
VDS = 10 V, ID = 1 A
Drain-Source On-State Resistanceb
rDS(on)
Ω
V
V
Forward Transconductanceb
Diode Forward Voltageb
gfs
S
V
V
DS = - 10 V, ID = - 1 A
IS = 0.9 A, VGS = 0 V
IS = - 0.8 A, VGS = 0 V
1.1
0.87
- 1.0
1.2
VSD
- 1.3
Dynamicb
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
0.95
1.10
0.22
0.28
0.24
0.26
3.5
10.5
8
1.4
1.7
Qg
Qgs
Qgd
Rg
Total Gate Charge
N-Channel
DS = 10 V, VGS = 4.5 V, ID = 1 A
V
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
nC
P-Channel
= - 10 V, V = - 4.5 V, I = - 1 A
GS D
V
DS
5.3
16
14
20
25
50
30
30
15
30
30
Ω
td(on)
tr
td(off)
tf
N-Channel
DD = 10 V, RL = 10 Ω
ID ≅ 0.9 A, VGEN = 4.5 V, RG = 1 Ω
13
V
16
34
20
P-Channel
DD = - 10 V, RL = 10 Ω
ID ≅ - 0.9 A, VGEN = - 4.5 V, RG = 1 Ω
Turn-Off Delay Time
Fall Time
ns
18
V
9
18
IF = 0.9 A, di/dt = 100 A/µs
IF = - 0.9 A, di/dt = 100 A/µs
IF = 0.9 A, di/dt = 100 A/µs
IF = - 0.9 A, di/dt = 100 A/µs
20
trr
Body Diode Reverse Recovery Tme
P-Ch
N-Ch
P-Ch
25
9
40
15
15
Body Diode Reverse Recovery
Charge
Qrr
nC
9
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73789
S-60470-Rev. A, 27-Mar-06
Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
3.0
2.4
1.8
1.2
0.6
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
= 5.0 thru 4 V
3 V
- 55 °C
25 °C
T
= 125 °C
C
2.5 V
2 V
0.0
0.7
1.4
2.1
2.8
3.5
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
110
88
66
44
22
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
GS
= 2.5 V
V
GS
= 3 V
C
iss
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
D
= 1.2 A
I
D
= 1 A
V
GS
= 3 V
V
= 5 V
DS
V
DS
= 10 V
6
V
GS
= 4.5 V
V
= 15 V
4
GS
2
0
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25
0
25
T – Junction Temperature (°C)
J
50
75
100 125 150
Q
– Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
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Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
1.5
1.2
0.9
0.6
0.3
0.0
10
1
150 °C
25 °C
0.1
125 °C
0.01
25 °C
0.001
0
1
2
3
4
5
0.0
0.3
V
0.6
0.9
1.2
1.5
V
GS
– Gate-to-Source Voltage (V)
– Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.2
0.1
30
24
18
12
- 0.0
- 0.1
- 0.2
- 0.3
- 0.4
I
= 5 mA
D
6
0
I
= 250 µA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
– Temperature (°C)
Time (sec)
J
Threshold Voltage
Single Pulse Power
10
*Limited by r
DS(on)
1 ms
1
10 ms
100 ms
1 s
0.1
T
= 25 °C
10 s
A
Single Pulse
dc
BV
DSS
Limited
0.01
1
0.1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
minimum V at which r
is specified
GS
DS(on)
Safe Operating Area
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Document Number: 73789
S-60470-Rev. A, 27-Mar-06
Si3850ADV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T – T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
www.vishay.com
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Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.6
1.2
0.8
0.4
0.0
V
= 5 thru 4 V
GS
- 55 °C
25 °C
3.5 V
3 V
T
= 125 °C
C
2.5 V
2 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
VGS
Output Characteristics
Transfer Characteristics
110
88
66
44
22
0
2.5
2.0
1.5
1.0
0.5
0.0
C
iss
V
GS
= 2.5 V
V
GS
= 3 V
C
oss
V
GS
= 4.5 V
C
rss
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
D
= 0.5 A
I
D
= 1 A
V
= 5 V
DS
V
GS
= 3 V
V
DS
= 10 V
6
V
GS
= 4.5 V
V
= 15 V
GS
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25
0
J
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T
– Junction Temperature (°C)
g
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 73789
S-60470-Rev. A, 27-Mar-06
Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
3.0
2.4
1.8
1.2
0.6
0.0
10
T
= 150 °C
J
1
25 °C
125 °C
0.1
25 °C
0.01
0.001
0
1
2
3
4
5
0.0
0.4
V
0.8
1.2
1.6
2.0
V
GS
– Gate-to-Source Voltage (V)
– Source-to-Drain Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.3
30
24
18
12
I
D
= 250 µA
0.2
I
D
= 5 mA
0.1
0.0
6
0
- 0.1
- 0.2
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
– Temperature (°C)
Time (sec)
J
Threshold Voltage
Single Pulse Power vs. Junction-to-Ambient
10
*Limited by r
DS(on)
1 ms
1
10 ms
100 ms
1 s
0.1
T
= 25 °C
10 s
dc
A
Single Pulse
BV
DSS
Limited
0.01
1
0.1
10
100
V
DS
– Drain-to-Source Voltage (V)
*
minimum V at which r
is specified
VGS
GS
DS(on)
Safe Operating Area
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
www.vishay.com
7
Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100 °C/W
thJA
(t)
3. T – T = P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73789.
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Document Number: 73789
S-60470-Rev. A, 27-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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