SI3850DV [VISHAY]
Complementary MOSFET Half-Bridge (N- and P-Channel); 互补MOSFET半桥（ N和P通道）
| 型号： | SI3850DV |
| 厂家： | 
VISHAY |
| 描述： | Complementary MOSFET Half-Bridge (N- and P-Channel) |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.500 @ V = 4.5 V
"1.2
"1.0
GS
N-Channel
P-Channel
20
0.750 @ V = 3.0 V
GS
1.00 @ V = –4.5 V
"0.85
"0.75
GS
–20
1.30 @ V = –3.0 V
GS
S
2
TSOP-6
Top View
G
G
2
G
S
1
1
2
3
6
1
D
D
D
5
4
G
2
S
2
1
S
1
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
20
"12
"1.2
"0.95
"3.5
1
–20
"12
"0.85
"0.65
"2.5
–1
DS
GS
V
T
= 25_C
= 70_C
A
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 70_C
1.25
0.8
A
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
R
thJA
100
_C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-1
Si3850DV
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
= V , I = 250 mA
0.6
N-Ch
P-Ch
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
DS
= V , I = –250 mA
–0.6
GS
D
I
V
DS
= 0 V, V = "12 V
"100
1
nA
GSS
GS
V
= 20 V, V = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
DS
GS
V
= –20 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
DS(on)
V
V
= 20 V, V = 0 V, T = 70_C
10
DS
GS
J
= –20 V, V = 0 V, T = 70_C
–10
DS
GS
J
V
= 5 V, V = 4.5 V
3.0
DS
GS
a
On-State Drain Current
I
V
DS
= –5 V, V = –4.5 V
GS
–2.0
V
= 4.5 V, I = 0.5 A
0.38
0.70
0.55
1.10
2.7
0.500
1.00
GS
D
V
GS
= –4.5 V, I = –0.5 A
D
a
Drain-Source On-State Resistance
r
W
V
= 3.0 V, I = 0.5 A
0.750
1.30
GS
D
V
GS
= –3.0 V, I = –0.5 A
D
V
= 10 V, I = 1.2 A
DS
D
a
Forward Transconductance
g
fs
S
V
V
DS
= –10 V, I = –0.85 A
D
1.2
I
S
= 1 A, V = 0 V
1.2
GS
a
Diode Forward Voltage
V
SD
I
S
= –1 A, V = 0 V
GS
–1.2
Dynamicb
0.8
1.10
0.25
0.50
0.2
0.2
10
2.0
2.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Total Gate Charge
Q
g
N-Channel
V
= 10 V, V = 4.5 V, I = 1.2 A
DS
GS D
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
nC
P-Channel
V
= –10 V, V = –4.5 V
DS
GS
I
= –0.85 A
D
20
15
40
40
40
20
30
15
80
80
t
d(on)
8
N-Channel
= 10 V, R = 10 W
20
V
DD
L
t
r
I
D
^ 1 A, V
= 4.5 V, R = 6 W
GEN G
20
20
P-Channel
= –10 V, R = 10 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
10
I
D
^ –1 A, V
= –4.5 V, R = 6 W
GEN G
16
t
f
8
I
F
= 1 A, di/dt = 100 A/ms
= –1 A, di/dt = 100 A/ms
40
Source-Drain Reverse Recovery Time
Notes
t
rr
I
40
F
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-2
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
NĆCHANNEL
Output Characteristics
Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3.5 V
V
= 5.0 thru 4.0 V
T
C
= –55_C
GS
25_C
125_C
3.0 V
2.5 V
2.0 V
1.5 V
2.0
0
0.5
1.0
1.5
2.5
3.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
120
100
80
60
40
20
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= 3.0 V
GS
V
GS
= 4.5 V
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
2.0
1.6
1.2
0.8
0.4
0
V
= 10 V
= 1.2 A
V
GS
= 4.5 V
GS
I
D
I = 1.2 A
D
0
0.2
0.4
0.6
0.8
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-3
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
0.4
0.2
0
4.0
T = 150_C
J
1.0
I
D
= 1.2 A
T = 25_C
J
0.1
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
30
0.2
0.1
24
18
12
6
I
D
= 250 mA
–0.0
–0.1
–0.2
–0.3
–0.4
0
–50 –25
0
25
50
75
100 125 150
0.001
0.010
0.100
1.000
10.000
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
0.02
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-4
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
PĆCHANNEL
Output Characteristics
Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
0
T
C
= –55_C
V
GS
= 5.0 thru 4.0 V
3.5 V
3.0 V
25_C
125_C
2.5 V
2.0 V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
120
100
80
60
40
20
0
2.0
1.6
1.2
0.8
0.4
0
V
GS
= 3.0 V
C
iss
C
oss
V
GS
= 4.5 V
C
rss
0
4
8
12
16
20
0
0.5
1.0
1.5
2.0
2.5
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
8
6
4
2
0
2.0
1.6
1.2
0.8
0.4
0
V
= 10 V
= 0.85 A
V
GS
= 4.5 V
GS
I
D
I = 0.85 A
D
0
0.3
0.6
0.9
1.2
1.5
1.8
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-5
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.0
1.5
1.0
0.5
0
4.0
T = 150_C
J
1.0
T = 25_C
J
I
D
=0.85 A
0.1
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
30
0.4
0.3
24
18
12
6
0.2
I
D
= 250 mA
0.1
0.0
–0.1
–0.2
0
–50 –25
0
25
50
75
100 125 150
0.001
0.010
0.100
1.000
10.000
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 100_C/W
3. T – T = P
DM thJA
thJA
(t)
Z
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
www.vishay.com S FaxBack 408-970-5600
2-6
相关型号：
SI3853DV-E3
TRANSISTOR 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
VISHAY
SI3861BDV-T1-GE3
Buffer/Inverter Based Peripheral Driver, 1 Driver, MOS, PDSO6, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
VISHAY
©2020 ICPDF网 联系我们和版权申明