SI3850DV-T1 [VISHAY]
Transistor;
| 型号： | SI3850DV-T1 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
FEATURES
PRODUCT SUMMARY
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
0.500 @ V = 4.5 V
1.2
GS
N-Channel
P-Channel
20
0.750 @ V = 3.0 V
1.0
GS
1.00 @ V = −4.5 V
−0.85
−0.75
GS
−20
1.30 @ V = −3.0 V
GS
S
2
TSOP-6
Top View
G
G
2
1
G
S
1
1
2
1
2
3
6
D
D
D
5
4
G
S
2
Ordering Information: Si3850DV-T1
Si3850DV-T1—E3 (Lead (Pb)-Free)
S
1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
−20
DS
V
V
GS
"12
T
= 25_C
= 70_C
1.2
0.95
3.5
1
−0.85
−0.65
−2.5
−1
A
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 70_C
1.25
0.8
A
Maximum Power Dissipation
P
W
D
(Surface Mounted on FR4 Board)
T
A
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
R
thJA
100
_C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
1
Si3850DV
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
= V , I = 250 mA
0.6
1.5
−1.5
"100
1
N-Ch
P-Ch
DS
GS
D
Gate Threshold Voltage
Gate-Body Leakage
V
V
GS(th)
V
DS
= V , I = −250 mA
−0.6
GS
D
I
V
DS
= 0 V, V = "12 V
nA
GSS
GS
V
= 20 V, V = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
DS
GS
V
= −20 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
V
V
= 20 V, V = 0 V, T = 70_C
10
DS
GS
J
= −20 V, V = 0 V, T = 70_C
−10
DS
GS
J
V
= 5 V, V = 4.5 V
3.0
DS
GS
a
On-State Drain Current
I
V
DS
= −5 V, V = −4.5 V
−2.0
GS
V
= 4.5 V, I = 0.5 A
0.38
0.70
0.55
1.10
2.7
0.500
1.00
GS
D
V
GS
= −4.5 V, I = −0.5 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 3.0 V, I = 0.5 A
0.750
1.30
GS
D
V
GS
= −3.0 V, I = −0.5 A
D
V
= 10 V, I = 1.2 A
DS
D
a
Forward Transconductance
g
fs
S
V
V
DS
= −10 V, I = −0.85 A
1.2
D
I
S
= 1 A, V = 0 V
1.2
GS
a
Diode Forward Voltage
V
SD
I
S
= −1 A, V = 0 V
−1.2
GS
Dynamicb
0.8
1.10
0.25
0.50
0.2
2.0
2.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Total Gate Charge
Q
g
N-Channel
V
= 10 V, V = 4.5 V, I = 1.2 A
GS D
DS
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
gs
gd
P-Channel
V
DS
= −10 V, V = −4.5 V
GS
I
= −0.85 A
D
0.2
0.3
3
1.5
16
20
15
40
40
40
20
30
15
80
80
R
g
W
10
8
t
d(on)
N-Channel
= 10 V, R = 10 W
20
20
20
10
16
8
V
DD
L
t
r
I
D
^ 1 A, V
= 4.5 V, R = 6 W
GEN g
P-Channel
= −10 V, R = 10 W
Turn-Off Delay Time
Fall Time
t
ns
d(off)
V
DD
L
I
D
^ −1 A, V
= −4.5 V, R = 6 W
GEN g
t
f
I
F
= 1 A, di/dt = 100 A/ms
= −1 A, di/dt = 100 A/ms
40
40
Source-Drain Reverse Recovery Time
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
t
rr
I
F
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
2
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Output Characteristics
Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5 V
V
GS
= 5.0 thru 4.0 V
T
= −55_C
C
25_C
125_C
3.0 V
2.5 V
2.0 V
1.5 V
2.0
0.0
0.5
1.0
1.5
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
120
100
80
60
40
20
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 3.0 V
GS
V
GS
= 4.5 V
C
iss
C
oss
C
rss
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
2.0
1.6
1.2
0.8
0.4
0.0
V
D
= 10 V
V
GS
= 4.5 V
GS
I
= 1.2 A
I = 1.2 A
D
4
3
2
1
0
0.0
0.2
0.4
0.6
0.8
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
3
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6
0.4
0.2
0.0
4.0
1.0
T
= 150_C
J
I
D
= 1.2 A
T
= 25_C
J
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
30
0.2
0.1
24
18
12
6
I
D
= 250 mA
−0.0
−0.1
−0.2
−0.3
−0.4
0
−50 −25
0
25
50
75
100 125 150
0.001
0.010
0.100
1.000
10.000
T
− Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
0.02
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
4
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Output Characteristics
Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
T
= −55_C
C
V
GS
= 5.0 thru 4.0 V
3.5 V
3.0 V
25_C
125_C
2.5 V
2.0 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
120
100
80
60
40
20
0
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
= 3.0 V
C
iss
C
oss
V
GS
= 4.5 V
C
rss
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
8
6
4
2
0
2.0
1.6
1.2
0.8
0.4
0.0
V
D
= 10 V
V
GS
= 4.5 V
GS
I
= 0.85 A
I = 0.85 A
D
0.0
0.3
0.6
0.9
1.2
1.5
1.8
−50 −25
0
25
50
75
100 125 150
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
5
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.0
1.5
1.0
0.5
0.0
4.0
1.0
T
= 150_C
J
T
= 25_C
J
I
D
=0.85 A
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
30
0.4
0.3
24
18
12
6
0.2
I
D
= 250 mA
0.1
0.0
−0.1
−0.2
0
−50 −25
0
25
50
75
100 125 150
0.001
0.010
0.100
1.000
10.000
T
− Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 100_C/W
3. T − T = P
DM thJA
thJA
(t)
Z
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70778.
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
6
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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