SI3851DV [VISHAY]
P-Channel 30-V (D-S) MOSFET With Schottky Diode; P通道30 - V（D -S）的MOSFET利用肖特基二极管
| 型号： | SI3851DV |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET With Schottky Diode |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si3851DV
Vishay Siliconix
New Product
P-Channel 30-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.200 @ V = –10 V
"1.8
"1.2
GS
–30
0.360 @ V = –4.5 V
GS
SCHOTTKY PRODUCT SUMMARY
Vf (v)
VKA (V)
IF (A)
Diode Forward Voltage
30
0.5 V @ 0.5 A
0.5
S
K
TSOP-6
Top View
A
S
K
1
2
3
6
5
G
3 mm
N/C
D
G
4
2.85 mm
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
V
–30
30
DS
KA
V
V
Gate-Source Voltage (MOSFET)
V
GS
"20
"20
T
= 25_C
= 70_C
"1.6
"1.2
"1.8
"1.5
A
a
Continuous Drain Current (T = 150_C) (MOSFET)
I
J
D
T
A
Pulsed Drain Current (MOSFET)
I
I
"7
DM
A
a
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
I
–1.05
–0.75
S
I
0.5
7
F
Pulsed Foward Current (Schottky)
FM
T
= 25_C
= 70_C
= 25_C
= 70_C
1.15
0.73
1.0
0.83
0.53
0.76
0.48
A
a
Maximum Power Dissipation (MOSFET)
T
A
P
W
D
T
A
a
Maximum Power Dissipation (Schottky)
T
A
0.64
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1
Si3851DV
New Product
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum Unit
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
93
103
130
140
75
110
125
t v 5 sec
Steady State
Steady State
Junction-to-Ambient
Junction-to-Foot
R
thJA
thJF
150
C/W
165
90
95
R
80
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
MOSFET SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
–1.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= –24 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= –24 V, V = 0 V, T = 75_C
–10
GS
J
a
On-State Drain Current
I
V
DS
w –5 V, V = –10 V
–5
A
D(on)
GS
V
= –10 V, I = –1.8 A
0.165
0.298
0.200
0.360
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= –4.5 V, I = –1.2 A
D
a
Forward Transconductance
g
V
= –15 V, I = –1.8 A
2.4
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= –1.05 A, V = 0 V
–0.83
–1.10
3.6
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
2.4
0.9
0.8
8
g
V
= –15 V, V = –5 V, I = –1.8 A
nC
ns
Q
gs
Q
gd
DS
GS
D
t
12
18
18
11
60
d(on)
t
12
12
7
r
V
= –15 V, R = 15 W
L
= –10 V, R = 6 W
GEN G
DD
I
^ –1 A, V
D
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= –1.05 A, di/dt = 100 A/ms
30
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T= _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 0.5 A
0.45
0.35
0.002
0.06
1.5
0.5
0.4
0.100
1
F
Forward Voltage Drop
V
V
F
I
= 0.5 A, T = 125_C
F
J
V = 30 V
r
V = 30 V, T = 75_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = 30 V, T = 125_C
10
r
J
V = 10 V
r
C
24
T
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-2
Si3851DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
10
8
6
4
2
0
6 V
V
GS
= 10 thru 7 V
T
C
= –55_C
8
25_C
5 V
6
4
2
0
125_C
4 V
3 V
2 V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.6
0.5
0.4
0.3
0.2
0.1
0
300
240
180
120
60
C
iss
V
= 4.5 V
GS
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
6
7
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15 V
V
GS
= 10 V
DS
I
D
= 1.8
A
I = 1.8 A
D
6
4
2
0
0
1
2
3
4
5
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-3
Si3851DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0
10
I
D
= 1.8 A
I
D
= 1 A
T = 150_C
J
1
T = 25_C
J
0.1
0
2
4
6
– Gate-to-Source Voltage (V)
GS
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
V
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6
8
0.4
0.2
6
I
D
= 250 mA
4
2
0.0
–0.2
–0.4
0
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
1
1. Duty Cycle, D =
t
2
0.02
2. Per Unit Base = R
= 130_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-4
Si3851DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
5
1
1
T = 150_C
J
0.1
30 V
T = 25_C
J
0.01
10 V
0.001
0.0001
0.1
0
25
50
75
100
125
150
0
0.2
V
0.4
0.6
0.8
1.0
T
– Junction Temperature (_C)
– Forward Voltage Drop (V)
J
F
Capacitance
125
100
75
50
25
0
V
= 10 V
= 1.8 A
GS
I
D
0
6
12
18
24
30
V
KA
– Reverse Voltage (V
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-5
Si3851DV
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
SCHOTTKY
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 140_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 70978
S-61845—Rev. A, 11-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-6
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