SI4464DY [VISHAY]
N-Channel 200-V (D-S) MOSFET; N沟道200 -V (D -S )的MOSFET型号: | SI4464DY |
厂家: | VISHAY |
描述: | N-Channel 200-V (D-S) MOSFET |
文件: | 总5页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Si4464DY
Vishay Siliconix
New Product
N-Channel 200-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D PWM Optimized for (Lowest Qg and Low RG)
APPLICATIONS
0.240 @ V = 10 V
2.2
2.1
GS
200
0.260 @ V = 6.0 V
GS
D Primary Side Switch
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
200
DS
GS
V
V
"20
T
= 25_C
= 70_C
2.2
1.7
1.7
1.3
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current
I
8
3
DM
Single Avalanch Current
I
AS
L = 0.1 mH
Single Avalanch Energy
E
0.45
mJ
A
AS
a
Continuous Source Current (Diode Conduction)
I
2.1
2.5
1.6
1.2
1.5
0.9
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
37
68
17
50
85
21
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
www.vishay.com
1
Si4464DY
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2.0
4
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 160 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 160 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
8
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.195
0.210
0.240
0.260
V
= 10 V, I = 2.2 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6.0 V, I = 2.1 A
D
GS
a
Forward Transconductance
g
V
= 15 V, I = 2.2 A
8.0
0.8
S
V
fs
DS
D
a
Diode Forward Voltage
V
I
S
= 2.1 A, V = 0 V
1.2
18
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
12
2.5
3.8
2.5
10
12
15
15
60
g
Q
gs
Q
gd
V
= 100 V, V = 10 V, I = 2.2 A
nC
DS
GS
D
R
W
G
t
t
15
20
25
25
90
d(on)
t
r
V
= 100 V, R = 100 W
L
DD
I
D
^ 1.0 A, V
= 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
8
8
6
4
2
0
V
= 10 thru 5 V
GS
6
4
2
0
T
C
= 125_C
4 V
3 V
25_C
-55 _C
0
2
4
6
8
0
1
2
3
4
5
6
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
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Document Number: 72051
S-22099—Rev. A, 02-Dec-02
Si4464DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.4
800
600
400
200
0
C
iss
0.3
V
= 6 V
GS
0.2
0.1
0.0
V
= 10 V
GS
C
rss
C
oss
0
2
4
6
8
0
20
40
60
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.5
2.0
1.5
1.0
0.5
0.0
V
= 100 V
= 2.2 A
V
= 10 V
GS
DS
I
D
I = 2.2 A
D
6
4
2
0
0
3
6
9
12
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
0.5
0.4
0.3
0.2
0.1
0.0
I
D
= 2.2 A
T = 150_C
J
1
T = 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
- Source-to-Drain Voltage (V)
SD
V
- Gate-to-Source Voltage (V)
GS
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
www.vishay.com
3
Si4464DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
40
0.4
I
D
= 250 mA
30
20
10
0
0.0
-0.4
-0.8
-1.2
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
600
T
J
- Temperature (_C)
Time (sec)
r
Limited
DS(on)
I
Limited
Safe Operating Area
DM
10
I
D(on)
P(t) = 0.0001
Limited
1
P(t) = 0.001
P(t) = 0.01
0.1
T
= 25_C
A
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse
0.01
BV
DSS
Limited
10
0.001
0.1
1
100
1000
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 68_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
Si4464DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72051
S-22099—Rev. A, 02-Dec-02
www.vishay.com
5
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