SI6441DQ-T1-GE3 [VISHAY]
TRANSISTOR SMALL SIGNAL, FET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal;
| 型号： | SI6441DQ-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR SMALL SIGNAL, FET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si6441DQ
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
VDS (V)
RDS(on) (Ω)
ID (A)
- 8
• TrenchFET® Power MOSFET
0.015 at VGS = - 10 V
0.024 at VGS = - 4.5 V
- 30
RoHS
- 6.4
COMPLIANT
APPLICATIONS
•
Battery Switch
•
Load Switch
S*
TSSOP-8
Si6441DQ
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
S
S
G
D
S
S
D
1
2
3
4
8
7
6
5
D
Top View
P-Channel MOSFET
Ordering Information: Si6441DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
- 30
20
V
VGS
TA = 25 °C
TA = 70 °C
- 8
- 6.3
Continuous Drain Current (TJ = 150 °C)a
ID
- 6.4
- 5.0
A
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
- 30
Continuous Source Current (Diode Conduction)a
- 1.6
1.75
1.14
- 1.0
TA = 25 °C
TA = 70 °C
1.08
Maximum Power Dissipationa
PD
W
0.69
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
55
Maximum
Unit
t ≤ 10 s
70
115
50
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
RthJA
Steady State
Steady State
95
°C/W
RthJF
38
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72213
S-80682-Rev. B, 31-Mar-2008
www.vishay.com
1
Si6441DQ
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 1
- 3
100
- 1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = - 30 V, VGS = 0 V
DS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 8 A
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
- 10
On-State Drain Currenta
- 20
0.012
0.019
25
0.015
0.024
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = - 4.5 V, ID = - 6.4 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 15 V, ID = - 8 A
IS = - 1.6 A, VGS = 0 V
S
V
VSD
- 0.75
- 1.1
40
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
27
7.0
12.8
15
V
DS = - 15 V, VGS = - 5 V, ID = - 8 A
nC
ns
25
25
13
V
DD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
95
150
90
56
trr
IF = - 1.6 A, di/dt = 100 A/µs
Source-Drain Reverse Recovery Time
60
100
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
6
30
24
18
12
6
V
GS
= 10 thru 4 V
3 V
T
= 125 °C
C
25 °C
- 55 °C
3.0 3.5
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72213
S-80682-Rev. B, 31-Mar-2008
Si6441DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.025
3500
2800
2100
1400
700
0.020
V
GS
= 4.5 V
C
iss
0.015
0.010
0.005
0.000
V
GS
= 10 V
C
oss
C
rss
0
0
6
12
18
24
30
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
V
D
= 10 V
V
D
= 15 V
GS
I = 8 A
DS
= 8 A
I
- 50 - 25
0
25
50
75
100 125 150
0
7
14
21
28
35
T
- Junction Temperature (°C)
Q
-Total Gate Charge (nC)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.080
0.064
0.048
0.032
0.016
0.000
40
10
T
= 150 °C
J
I
D
= 8 A
1
T
= 25 °C
J
0.1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72213
S-80682-Rev. B, 31-Mar-2008
www.vishay.com
3
Si6441DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
60
50
0.6
0.4
40
30
I
D
= 250 µA
0.2
0.0
20
10
0
- 0.2
- 0.4
-2
-1
- 50 - 25
0
25
50
75
100 125 150
10
10
1
10
T
- Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
by R
*
DS(on)
10
1
10 ms
100 ms
1 s
0.1
T
= 25 °C
10 s
DC
C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 95 °C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72213
S-80682-Rev. B, 31-Mar-2008
Si6441DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72213.
Document Number: 72213
S-80682-Rev. B, 31-Mar-2008
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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