SI7469DP [VISHAY]
P-Channel 80-V (D-S) MOSFET; P通道80 -V （D -S ）的MOSFET
| 型号： | SI7469DP |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 80-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
Si7469DP
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)a
- 28
0.025 at VGS = - 10 V
0.029 at VGS = - 4.5 V
- 80
55 nC
RoHS
- 28
COMPLIANT
PowerPAK SO-8
S
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View
Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 80
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 28a
- 28a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
- 10.2b, c
- 8.1b, c
- 40
- 28a
- 4.3b, c
- 45
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
100
83
mJ
W
T
C = 25 °C
TC = 70 °C
A = 25 °C
53
PD
Maximum Power Dissipation
5.2b, c
3.3b, c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 sec
Steady State
19
24
°C/W
RthJC
1.2
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73438
S-71596-Rev. B, 30-Jul-07
www.vishay.com
1
New Product
Si7469DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 80
V
V
DS Temperature Coefficient
- 79.6
5.3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1
- 3
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 80 V, VGS = 0 V
DS = - 80 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = - 10 V
IDSS
ID(on)
rDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
- 40
VGS = - 10 V, ID = - 10.2 A
0.021
0.024
52
0.025
0.029
Drain-Source On-State Resistancea
Ω
S
V
GS = - 4.5 V, ID = - 8.1 A
Forward Transconductancea
VDS = - 15 V, ID = - 10.2 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4700
320
235
105
55
VDS = - 40 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 40 V, VGS = - 10 V, ID = - 10.2 A
160
85
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 40 V, VGS = - 4.5 V, ID = - 10.2 A
f = 1 MHz
16
26
4
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
45
70
330
145
165
25
220
95
V
DD = - 40 V, RL = 4.9 Ω
ns
ID ≅ - 8.1 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
110
15
Turn-On Delay Time
Rise Time
25
40
V
DD = - 40 V, RL = 4.9 Ω
ns
A
ID ≅ - 8.1 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
105
100
160
150
Drain-Source Body Diode Characteristics
IS
ISM
VSD
trr
TC = 25 °C
IS = - 8.1 A
Continuous Source-Drain Diode Current
- 28
- 40
- 1.2
85
Pulse Diode Forward Currenta
Body Diode Voltage
- 0.8
55
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
110
37
165
IF = - 8.1 A, di/dt = 100 A/µs, TJ = 25 °C
ns
tb
18
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73438
S-71596-Rev. B, 30-Jul-07
New Product
Si7469DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
16
12
8
40
V
GS
= 10 thru 4 V
35
30
25
20
15
10
5
T
A
= 125 °C
25 °C
4
3 V
- 55 °C
3.0 3.5
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.026
0.025
0.024
0.023
0.022
0.021
0.020
8000
7000
6000
5000
4000
3000
2000
1000
0
V
GS
= 4.5 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
10
I
D
= 10.2 A
I
D
= 10.2 A
8
6
4
2
0
V
GS
= 10 V
V
DS
= 64 V
V
DS
= 40 V
V
GS
= 4.5 V
- 50 - 25
0
25
50
75
100 125 150
0
20
40
60
80
100
120
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73438
S-71596-Rev. B, 30-Jul-07
www.vishay.com
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New Product
Si7469DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.05
0.04
0.03
0.02
0.01
T
J
= 150 °C
T
A
= 125 °C
10
T
A
= 25 °C
T
= 25 °C
J
1
0.00
2
3
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
35
30
I
D
= 250 µA
25
20
15
10
5
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
*Limited by
DS(on)
100 µs
1 ms
r
10
1
10 ms
100 ms
1 s
10 s
dc
0.1
0.01
T
= 25 °C
A
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
*V > minimum V
GS
at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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Document Number: 73438
S-71596-Rev. B, 30-Jul-07
New Product
Si7469DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
50
40
Package Limited
30
20
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
100
10
.
L
I
D
T
=
A
BV - V
DD
1
0.000001
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73438
S-71596-Rev. B, 30-Jul-07
www.vishay.com
5
New Product
Si7469DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-2
-1
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73438.
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Document Number: 73438
S-71596-Rev. B, 30-Jul-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
相关型号：
SI7470DP-T1-E3
Power Field-Effect Transistor, 40A I(D), 8V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
VISHAY
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