SI7469DP [VISHAY]

P-Channel 80-V (D-S) MOSFET; P通道80 -V (D -S )的MOSFET
SI7469DP
型号: SI7469DP
厂家: VISHAY    VISHAY
描述:

P-Channel 80-V (D-S) MOSFET
P通道80 -V (D -S )的MOSFET

文件: 总7页 (文件大小:108K)
中文:  中文翻译
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New Product  
Si7469DP  
Vishay Siliconix  
P-Channel 80-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
rDS(on) (Ω)  
Qg (Typ)  
I
D (A)a  
- 28  
0.025 at VGS = - 10 V  
0.029 at VGS = - 4.5 V  
- 80  
55 nC  
RoHS  
- 28  
COMPLIANT  
PowerPAK SO-8  
S
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View  
Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 80  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
- 28a  
- 28a  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 10.2b, c  
- 8.1b, c  
- 40  
- 28a  
- 4.3b, c  
- 45  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
100  
83  
mJ  
W
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
53  
PD  
Maximum Power Dissipation  
5.2b, c  
3.3b, c  
T
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 sec  
Steady State  
19  
24  
°C/W  
RthJC  
1.2  
1.5  
Notes:  
a. Package Limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 sec.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 65 °C/W.  
Document Number: 73438  
S-71596-Rev. B, 30-Jul-07  
www.vishay.com  
1
New Product  
Si7469DP  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
Static  
VDS  
ΔVDS/TJ  
ΔVGS(th)/TJ  
VGS(th)  
VGS = 0 V, ID = - 250 µA  
ID = - 250 µA  
Drain-Source Breakdown Voltage  
- 80  
V
V
DS Temperature Coefficient  
- 79.6  
5.3  
mV/°C  
VGS(th) Temperature Coefficient  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS = VGS, ID = - 250 µA  
- 1  
- 3  
100  
- 1  
V
IGSS  
VDS = 0 V, VGS  
=
20 V  
nA  
VDS = - 80 V, VGS = 0 V  
DS = - 80 V, VGS = 0 V, TJ = 55 °C  
VDS 5 V, VGS = - 10 V  
IDSS  
ID(on)  
rDS(on)  
gfs  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
- 10  
- 40  
VGS = - 10 V, ID = - 10.2 A  
0.021  
0.024  
52  
0.025  
0.029  
Drain-Source On-State Resistancea  
Ω
S
V
GS = - 4.5 V, ID = - 8.1 A  
Forward Transconductancea  
VDS = - 15 V, ID = - 10.2 A  
Dynamicb  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
4700  
320  
235  
105  
55  
VDS = - 40 V, VGS = 0 V, f = 1 MHz  
pF  
VDS = - 40 V, VGS = - 10 V, ID = - 10.2 A  
160  
85  
Qg  
Total Gate Charge  
nC  
Ω
Qgs  
Qgd  
Rg  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
V
DS = - 40 V, VGS = - 4.5 V, ID = - 10.2 A  
f = 1 MHz  
16  
26  
4
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
45  
70  
330  
145  
165  
25  
220  
95  
V
DD = - 40 V, RL = 4.9 Ω  
ns  
ID - 8.1 A, VGEN = - 10 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
110  
15  
Turn-On Delay Time  
Rise Time  
25  
40  
V
DD = - 40 V, RL = 4.9 Ω  
ns  
A
ID - 8.1 A, VGEN = - 4.5 V, Rg = 1 Ω  
Turn-Off Delay Time  
Fall Time  
105  
100  
160  
150  
Drain-Source Body Diode Characteristics  
IS  
ISM  
VSD  
trr  
TC = 25 °C  
IS = - 8.1 A  
Continuous Source-Drain Diode Current  
- 28  
- 40  
- 1.2  
85  
Pulse Diode Forward Currenta  
Body Diode Voltage  
- 0.8  
55  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Reverse Recovery Fall Time  
Reverse Recovery Rise Time  
ns  
nC  
Qrr  
ta  
110  
37  
165  
IF = - 8.1 A, di/dt = 100 A/µs, TJ = 25 °C  
ns  
tb  
18  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 73438  
S-71596-Rev. B, 30-Jul-07  
New Product  
Si7469DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
20  
16  
12  
8
40  
V
GS  
= 10 thru 4 V  
35  
30  
25  
20  
15  
10  
5
T
A
= 125 °C  
25 °C  
4
3 V  
- 55 °C  
3.0 3.5  
0
0.0  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
GS  
- Gate-to-Source Voltage (V)  
V
DS  
- Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
0.026  
0.025  
0.024  
0.023  
0.022  
0.021  
0.020  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
V
GS  
= 4.5 V  
C
iss  
V
GS  
= 10 V  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
On-Resistance vs. Drain Current and Gate Voltage  
Capacitance  
2.1  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
10  
I
D
= 10.2 A  
I
D
= 10.2 A  
8
6
4
2
0
V
GS  
= 10 V  
V
DS  
= 64 V  
V
DS  
= 40 V  
V
GS  
= 4.5 V  
- 50 - 25  
0
25  
50  
75  
100 125 150  
0
20  
40  
60  
80  
100  
120  
Q
g
- Total Gate Charge (nC)  
T - Junction Temperature (°C)  
J
Gate Charge  
On-Resistance vs. Junction Temperature  
Document Number: 73438  
S-71596-Rev. B, 30-Jul-07  
www.vishay.com  
3
New Product  
Si7469DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
40  
0.05  
0.04  
0.03  
0.02  
0.01  
T
J
= 150 °C  
T
A
= 125 °C  
10  
T
A
= 25 °C  
T
= 25 °C  
J
1
0.00  
2
3
4
5
6
7
8
9
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
35  
30  
I
D
= 250 µA  
25  
20  
15  
10  
5
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
1000  
T
J
- Temperature (°C)  
Time (sec)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
100  
*Limited by  
DS(on)  
100 µs  
1 ms  
r
10  
1
10 ms  
100 ms  
1 s  
10 s  
dc  
0.1  
0.01  
T
= 25 °C  
A
Single Pulse  
0.001  
0.1  
1
10  
100  
1000  
V
DS  
- Drain-to-Source Voltage (V)  
*V > minimum V  
GS  
at which r  
is specified  
GS  
DS(on)  
Safe Operating Area, Junction-to-Ambient  
www.vishay.com  
4
Document Number: 73438  
S-71596-Rev. B, 30-Jul-07  
New Product  
Si7469DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
100  
80  
60  
40  
20  
0
50  
40  
Package Limited  
30  
20  
10  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
T
C
- Case Temperature (°C)  
T
C
- Case Temperature (°C)  
Power Derating  
Current Derating*  
100  
10  
.
L
I
D
T
=
A
BV - V  
DD  
1
0.000001  
0.00001  
0.0001  
0.001  
0.01  
T
A
- Time In Avalanche (sec)  
Single Pulse Avalanche Capability  
*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-  
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.  
Document Number: 73438  
S-71596-Rev. B, 30-Jul-07  
www.vishay.com  
5
New Product  
Si7469DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
0.02  
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 65 °C/W  
thJA  
(t)  
3. T - T = P  
Z
JM  
A
DM thJA  
Single Pulse  
0.01  
4. Surface Mounted  
-2  
-1  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
100  
1000  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
0.1  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?73438.  
www.vishay.com  
6
Document Number: 73438  
S-71596-Rev. B, 30-Jul-07  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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