概述
数据手册SI7909DN 概述
Dual P-Channel 12-V (D-S) MOSFET 双P通道12 -V （D -S ）的MOSFET
SI7909DN 数据手册
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PDF下载Si7909DN
Vishay Siliconix
New Product
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET® Power MOSFETS: 1.8-V Rated
VDS (V)
rDS(on) (Ω)
ID (A)
–7.7
–6.8
–5.7
New Low Thermal Resistance PowerPAK®
Package
Pb-free
Available
0.037 @ VGS = –4.5 V
0.048 @ VGS = –2.5 V
0.068 @ VGS = –1.8 V
•
•
Advanced High Cell Density Process
Ultra-Low rDS(on), and High PD Capability
RoHS*
–12
COMPLIANT
APPLICATIONS
•
•
•
•
Load Switch
PA Switch
Battery Switch
Bi-Directional Switch
PowerPAK 1212-8
S
1
S
2
S1
3.30 mm
3.30 mm
1
G1
2
S2
3
G2
4
G
G
1
2
D1
8
D1
7
D2
6
D2
5
D
2
D
1
Bottom View
P-Channel MOSFET
P-Channel MOSFET
Ordering Information: Si7909DN-T1
Si7909DN–T1–E3 (Lead (Pb)–free)
ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
–12
8
V
VGS
TA = 25°C
–7.7
–5.5
–5.3
–3.8
Continuous Drain Current (TJ = 150°C)a
ID
TA = 85°C
A
IDM
IS
–20
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
–2.3
2.8
–1.1
1.3
T
A = 25°C
A = 85°C
Maximum Power Dissipationa
PD
W
T
1.5
0.85
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TJ, Tstg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 sec
35
75
4
44
94
5
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
°C/W
Maximum Junction-to-Case
RthJC
Notes
a. Surface Mounted on 1“ x 1“ FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
www.vishay.com
1
Si7909DN
Vishay Siliconix
New Product
SPECIFICATIONS T = 25°C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = –700 µA
–0.40
–1.0
100
–1
V
VDS = 0 V, VGS
= 8 V
nA
VDS = –12 V, VGS = 0 V
DS = –12 V, VGS = 0 V, TJ = 85°C
VDS ≤ –5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –7.7 A
VGS = –2.5 V, ID = –6.8 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
–5
ID(on)
–20
0.031
0.040
0.057
17
0.037
0.048
0.068
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = –1.8 V, ID = –3.0 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = –6 V, ID = –7.7 A
IS = –2.3 A, VGS = 0 V
S
V
VSD
–0.7
–1.2
24
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
15.5
2.5
4.3
25
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS = –6 V, VGS = –4.5 V, ID = –7.7 A
nC
ns
40
70
45
V
DD = –6 V, RL = 6 Ω
ID ≅ –1 A, VGEN = –4.5 V, RG = 6 Ω
Turn-Off DelayTime
Fall Time
td(off)
tf
90
135
130
110
85
Source-Drain Reverse Recovery Time
Notes
trr
IF = –2.3 A, di/dt = 100 A/µs
70
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
20
20
V
GS
= 5 thru 2.5 V
16
12
8
16
12
8
2 V
1.5 V
1 V
T
= 125˚C
C
4
4
25˚C
–55˚C
1.5
0
0.0
0
0.5
1.0
2.0
2.5
0
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
Si7909DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
2400
1800
1200
600
0
0.12
0.09
0.06
0.03
0.00
V
GS
= 1.8 V
C
iss
V
V
= 2.5 V
= 4.5 V
GS
C
oss
GS
C
rss
0
4
8
12
16
20
0
2
4
6
8
10
12
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.3
V
D
= 6 V
V
D
= 4.5 V
DS
= 7.7
GS
I
A
I = 7.7 A
1.2
1.1
1.0
0.9
0.8
0
4
8
12
16
20
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (˚C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 7.7 A
T
= 150˚C
J
I
D
= 3 A
T
= 25˚C
J
1
0.0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
www.vishay.com
3
Si7909DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
0.4
50
I
D
= 700 µA
0.3
0.2
40
30
0.1
20
10
0.0
–0.1
–0.2
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
600
T
– Temperature (˚C)
J
Time (sec)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
100
r
Limited
DS(on)
I
Limited
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
= 25˚C
A
0.1
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Safe Operating Area, Junction-To-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 65˚C/W
(t)
thJA
3. T – T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
www.vishay.com
4
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
Si7909DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted
A
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71996.
Document Number: 71996
S-51210–Rev. C, 27-Jun-05
www.vishay.com
5
SI7909DN 相关器件
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| SI7909DN-T1-E3 | VISHAY | Transistor | 获取价格 |
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| SI7913DN | VISHAY | Dual P-Channel 20-V (D-S) MOSFET | 获取价格 |
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