SI7909DN [VISHAY]

Dual P-Channel 12-V (D-S) MOSFET; 双P通道12 -V (D -S )的MOSFET
SI7909DN
型号: SI7909DN
厂家: VISHAY    VISHAY
描述:

Dual P-Channel 12-V (D-S) MOSFET
双P通道12 -V (D -S )的MOSFET

文件: 总5页 (文件大小:186K)
中文:  中文翻译
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Si7909DN  
Vishay Siliconix  
New Product  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETS: 1.8-V Rated  
VDS (V)  
rDS(on) ()  
ID (A)  
–7.7  
–6.8  
–5.7  
New Low Thermal Resistance PowerPAK®  
Package  
Pb-free  
Available  
0.037 @ VGS = –4.5 V  
0.048 @ VGS = –2.5 V  
0.068 @ VGS = –1.8 V  
Advanced High Cell Density Process  
Ultra-Low rDS(on), and High PD Capability  
RoHS*  
–12  
COMPLIANT  
APPLICATIONS  
Load Switch  
PA Switch  
Battery Switch  
Bi-Directional Switch  
PowerPAK 1212-8  
S
1
S
2
S1  
3.30 mm  
3.30 mm  
1
G1  
2
S2  
3
G2  
4
G
G
1
2
D1  
8
D1  
7
D2  
6
D2  
5
D
2
D
1
Bottom View  
P-Channel MOSFET  
P-Channel MOSFET  
Ordering Information: Si7909DN-T1  
Si7909DN–T1–E3 (Lead (Pb)–free)  
ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
–12  
8
V
VGS  
TA = 25°C  
–7.7  
–5.5  
–5.3  
–3.8  
Continuous Drain Current (TJ = 150°C)a  
ID  
TA = 85°C  
A
IDM  
IS  
–20  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
–2.3  
2.8  
–1.1  
1.3  
T
A = 25°C  
A = 85°C  
Maximum Power Dissipationa  
PD  
W
T
1.5  
0.85  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
TJ, Tstg  
–55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 10 sec  
35  
75  
4
44  
94  
5
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
°C/W  
Maximum Junction-to-Case  
RthJC  
Notes  
a. Surface Mounted on 1“ x 1“ FR4 Board.  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 71996  
S-51210–Rev. C, 27-Jun-05  
www.vishay.com  
1
Si7909DN  
Vishay Siliconix  
New Product  
SPECIFICATIONS T = 25°C, unless otherwise noted  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
VDS = VGS, ID = –700 µA  
–0.40  
–1.0  
100  
–1  
V
VDS = 0 V, VGS  
= 8 V  
nA  
VDS = –12 V, VGS = 0 V  
DS = –12 V, VGS = 0 V, TJ = 85°C  
VDS –5 V, VGS = –4.5 V  
VGS = –4.5 V, ID = –7.7 A  
VGS = –2.5 V, ID = –6.8 A  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain Currenta  
µA  
A
V
–5  
ID(on)  
–20  
0.031  
0.040  
0.057  
17  
0.037  
0.048  
0.068  
Drain-Source On-State Resistancea  
rDS(on)  
V
GS = –1.8 V, ID = –3.0 A  
Forward Transconductancea  
Diode Forward Voltagea  
Dynamicb  
gfs  
VDS = –6 V, ID = –7.7 A  
IS = –2.3 A, VGS = 0 V  
S
V
VSD  
–0.7  
–1.2  
24  
Total Gate Charge  
Qg  
Qgs  
Qgd  
td(on)  
tr  
15.5  
2.5  
4.3  
25  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
VDS = –6 V, VGS = –4.5 V, ID = –7.7 A  
nC  
ns  
40  
70  
45  
V
DD = –6 V, RL = 6 Ω  
ID –1 A, VGEN = –4.5 V, RG = 6 Ω  
Turn-Off DelayTime  
Fall Time  
td(off)  
tf  
90  
135  
130  
110  
85  
Source-Drain Reverse Recovery Time  
Notes  
trr  
IF = –2.3 A, di/dt = 100 A/µs  
70  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
20  
20  
V
GS  
= 5 thru 2.5 V  
16  
12  
8
16  
12  
8
2 V  
1.5 V  
1 V  
T
= 125˚C  
C
4
4
25˚C  
–55˚C  
1.5  
0
0.0  
0
0.5  
1.0  
2.0  
2.5  
0
1
2
3
4
V
GS  
– Gate-to-Source Voltage (V)  
V
DS  
– Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
www.vishay.com  
2
Document Number: 71996  
S-51210–Rev. C, 27-Jun-05  
Si7909DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
2400  
1800  
1200  
600  
0
0.12  
0.09  
0.06  
0.03  
0.00  
V
GS  
= 1.8 V  
C
iss  
V
V
= 2.5 V  
= 4.5 V  
GS  
C
oss  
GS  
C
rss  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
12  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
5
4
3
2
1
0
1.3  
V
D
= 6 V  
V
D
= 4.5 V  
DS  
= 7.7  
GS  
I
A
I = 7.7 A  
1.2  
1.1  
1.0  
0.9  
0.8  
0
4
8
12  
16  
20  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
Total Gate Charge (nC)  
T – Junction Temperature (˚C)  
J
g
Gate Charge  
On-Resistance vs. Junction Temperature  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
20  
10  
I
D
= 7.7 A  
T
= 150˚C  
J
I
D
= 3 A  
T
= 25˚C  
J
1
0.0  
0
1
2
3
4
5
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
GS  
– Gate-to-Source Voltage (V)  
V
SD  
– Source-to-Drain Voltage (V)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
Document Number: 71996  
S-51210–Rev. C, 27-Jun-05  
www.vishay.com  
3
Si7909DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
0.4  
50  
I
D
= 700 µA  
0.3  
0.2  
40  
30  
0.1  
20  
10  
0.0  
–0.1  
–0.2  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
100  
600  
T
Temperature (˚C)  
J
Time (sec)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
100  
r
Limited  
DS(on)  
I
Limited  
DM  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
P(t) = 10  
dc  
T
= 25˚C  
A
0.1  
Single Pulse  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
– Drain-to-Source Voltage (V)  
Safe Operating Area, Junction-To-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
0.02  
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 65˚C/W  
(t)  
thJA  
3. T – T = P  
Z
JM DM thJA  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
10  
100  
600  
www.vishay.com  
4
Document Number: 71996  
S-51210–Rev. C, 27-Jun-05  
Si7909DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS T = 25°C, unless otherwise noted  
A
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
Single Pulse  
0.1  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?71996.  
Document Number: 71996  
S-51210–Rev. C, 27-Jun-05  
www.vishay.com  
5

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