SUB70N06-14-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;型号: | SUB70N06-14-E3 |
厂家: | VISHAY |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
文件: | 总5页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
_C/W
SUP/SUB70N06-14
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
60
0.014
70
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
Top View
S
SUB70N06-14
N-Channel MOSFET
SUP70N06-14
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
"20
V
a
T
C
= 25_C
70
Continuous Drain Current (T = 175_C)
I
D
J
T
C
= 100_C
49
160
70
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
180
mJ
W
AR
c
T
C
= 25_C (TO-220AB and TO-263)
142
Power Dissipation
P
D
d
T
A
= 25_C (TO-263)
3.7
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
Free Air (TO-220AB)
62.5
1.05
R
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB70N06-14
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
(BR)DSS
D
V
V
= V , I = 1 mA
GS DS
Gate Threshold Voltage
Gate-Body Leakage
V
2.0
3.0
4.0
DS
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 60 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= 60 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 60 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
70
25
A
D(on)
V
GS
= 10 V, I = 30 A
D
0.014
0.023
0.028
a
Drain-Source On-State Resistance
r
W
V
V
= 10 V, I = 30 A, T = 125_C
DS(on)
GS
D
J
= 10 V, I = 30 A, T = 175_C
GS
D
J
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
50
S
D
Dynamicb
Input Capacitance
C
2400
490
130
45
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
70
g
c
Gate-Source Charge
Q
V
DS
= 30 V V = 10 V, I = 60 A
12
gs
gd
,
GS
D
c
Gate-Drain Charge
Q
16
c
Turn-On Delay Time
t
13
30
30
60
25
d(on)
c
Rise Time
t
r
11
V
= 30 V, R = 0.47 W
L
DD
ns
c
I
D
] 60 A, V
= 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
30
d(off)
c
Fall Time
t
f
11
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
70
160
1.4
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 70 A, V = 0 V
V
ns
A
GS
Reverse Recovery Time
t
47
3.5
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
I = 60 A, di/dt = 100 A/ms
F
Q
0.08
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB70N06-14
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
150
125
100
75
100
V
= 10, 9, 8 V
GS
7 V
6 V
80
60
40
20
0
50
5 V
T
C
= 125_C
25
25_C
4 V
8
–55_C
0
0
2
4
6
10
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
70
60
50
40
30
20
10
0
0.0200
0.0175
0.0150
0.0125
0.0100
0.0075
0.005
T
C
= –55_C
25_C
125_C
V
GS
= 10 V
V
GS
= 20 V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
Gate Charge
3500
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 30 V
= 60 A
DS
I
D
C
iss
C
oss
4
C
rss
0
0
0
10
20
30
40
0
20
40
Q – Total Gate Charge (nC)
g
60
80
100
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB70N06-14
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 30 A
GS
I
D
T
C
= 150_C
T
C
= 25_C
10
1
–50 –25
0
25
50
75 100 125 150 175
0.25
0.50
0.75
1.00
1.25
1.50
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
100
100
80
60
40
20
0
Limited
by r
DS(on)
100 ms
10
1
1 ms
10 ms
100 ms,
1 s, dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70291
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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