SUB75P03-07 [VISHAY]
P-Channel 30-V (D-S) 175C MOSFET; P通道30 -V （ D- S） 175 2 C MOSFET
| 型号： | SUB75P03-07 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) 175C MOSFET |
| 文件： | 总5页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
SUP/SUB75P03-07
Vishay Siliconix
P-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)a
0.007 @ V = –10 V
GS
"75
"75
–30
0.010 @ V = –4.5
V
GS
S
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
D
SUB75P03-07
Top View
P-Channel MOSFET
SUP75P03-07
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
"20
V
a
T
= 25_C
= 125_C
–75
C
Continuous Drain Current
(T = 175_C)
J
I
D
T
C
–65
–240
–60
A
Pulsed Drain Current
I
DM
Avalanche Current
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
180
mJ
W
AR
d
T
C
= 25_C (TO-220AB and TO-263)
187
Power Dissipation
P
D
c
T
A
= 25_C (TO-263)
3.75
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
R
thJA
R
thJA
R
thJC
40
62.5
0.8
Junction-to-Ambient
Junction-to-Case
Free Air (TO-220AB)
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB75P03-07
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = –250 mA
–30
–1
(BR)DSS
GS
D
V
V
DS
= V , I = –250 mA
GS D
Gate Threshold Voltage
Gate-Body Leakage
V
–3
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
–1
nA
GSS
V
= –30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= –30 V, V = 0 V, T = 125_C
–50
mA
A
DSS
DS
GS
J
= –30 V, V = 0 V, T = 175_C
–250
DS
GS
J
a
On-State Drain Current
I
V
DS
= –5 V, V = –10 V
–120
D(on)
GS
V
= –10 V, I = –30 A
0.0055
0.008
0.007
0.010
0.013
0.010
GS
D
V
= –10 V, I = –30 A, T = 125_C
W
GS
D
J
a
Drain-Source On-State Resistance
r
DS(on)
V
GS
= –10 V, I = –30 A, T = 175_C
D
J
V
GS
= –4.5 V, I = –20 A
W
D
a
Forward Transconductance
g
fs
V
DS
= –15 V, I = –75 A
20
S
D
Dynamicb
Input Capacitance
C
9000
1565
715
160
32
iss
Output Capacitance
C
oss
V
= 0 V, V = –25 V, f = 1 MHz
pF
nC
GS
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
240
g
c
Gate-Source Charge
Q
Q
V
= –15 V, V = –10 V, I = –75 A
gs
gd
DS GS D
c
Gate-Drain Charge
30
c
Turn-On Delay Time
t
25
40
d(on)
c
Rise Time
t
225
150
210
360
240
340
r
V
= –15 V, R = 0.2 W
L
DD
ns
c
I
D
] –75 A, V
= –10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
–75
–240
–1.5
100
5
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= –75 A, V = 0 V
–1.2
55
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
I
F
= –75 A, di/dt = 100 A/ms
2.5
Q
0.07
0.25
mC
rr
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
200
T
= –55_C
C
V
GS
= 10 thru 6 V
25_C
160
120
80
40
0
5 V
125_C
4 V
3 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
150
120
90
60
30
0
0.030
0.025
0.020
0.015
0.010
0.005
0
T
C
= –55_C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
= 15 V
= 75 A
DS
C
iss
I
D
C
oss
4
C
rss
0
0
6
12
18
24
30
0
50
100
Q – Total Gate Charge (nC)
g
150
200
250
300
V
– Drain-to-Source Voltage (V)
DS
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.5
1.2
0.9
0.6
0.3
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
10
T = 25_C
J
1
–50 –25
0
25
50
75 100 125 150 175
0
0.2
V
0.4
0.6
0.8
1.0
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
45
40
35
30
25
I
D
= 250 mA
I
AV
(A) @ T = 25_C
A
100
10
1
I
AV
(A) @ T = 150_C
A
0.1
–50 –25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
J
– Junction Temperature (_C)
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-4
SUP/SUB75P03-07
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
90
75
60
45
30
15
0
10 ms
100
10
100 ms
Limited
by r
1 ms
DS(on)
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–3
–2
–1
–4
10
10
10
1
10
10
Square Wave Pulse Duration (sec)
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
2-5
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