SUD50N03-11-E3 [VISHAY]
TRANSISTOR 50 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power;型号: | SUD50N03-11-E3 |
厂家: | VISHAY |
描述: | TRANSISTOR 50 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power 脉冲 晶体管 |
文件: | 总7页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD50N03-11
Vishay Siliconix
N-Channel 30-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
I
D (A)a
50
VDS (V)
RDS(on) (Ω)
175 °C Maximum Junction Temperature
100 % Rg Tested
RoHS
0.011 at VGS = 10 V
0.017 at VGS = 4.5 V
COMPLIANT
30
43
D
TO-252
G
Drain Connected to Tab
G
D
S
S
Top View
Ordering Information: SUD50N03-11-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TC = 25 °C
50
Continuous Drain Current (TJ = 175 °C)b
ID
TC = 100 °C
37
A
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
100
50
62.5c
TC = 25 °C
PD
W
Maximum Power Dissipation
7.5b
TA = 25 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
17
50
2
20
60
Junction-to-Ambientb
RthJA
Steady State
°C/W
RthJC
RthJL
Junction-to-Case
Junction-to-Lead
2.4
4
4.8
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 s.
c. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
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1
SUD50N03-11
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ.a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
30
V
nA
µA
A
Gate Threshold Voltage
Gate-Body Leakage
0.8
VDS = 0 V, VGS
=
20 V
100
1
VDS = 24 V, VGS = 0 V
DS = 24 V, VGS = 0 V, TJ = 125 °C
VDS = 5 V, VGS = 5 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
V
50
ID(on)
50
10
VGS = 10 V, ID = 25 A
0.009
0.014
0.011
0.018
0.017
Drain-Source On-State Resistanceb
RDS(on)
V
GS = 5 V, ID = 20 A, TJ = 125 °C
GS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Ω
V
Forward Transconductanceb
Dynamica
gfs
S
Ciss
Coss
Crss
Qg
Input Capacitance
1130
400
175
12
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 5 V, ID = 50 A
Output Capacitance
Reverse Transfer Capacitance
pF
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
20
Qgs
Qgd
Rg
4
nC
4.5
0.5
3.4
12
15
30
9
Ω
td(on)
tr
td(off)
tf
8
10
18
6
V
DD = 15 V, RL = 0.3 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
Source-Drain Diode Ratings and Characteristics TC = 25 °C
IS
ISM
VSD
trr
Continuous Current
50
80
1.5
50
A
Pulsed Current
Diode Forward Voltageb
IF = 100 A, VGS = 0 V
V
IF = 50 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
30
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
SUD50N03-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
200
V
GS
= 10 thru 8 V
7 V
T
= - 55 °C
C
160
120
80
40
0
6 V
5 V
25 °C
125 °C
4 V
3 V
2 V
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
60
50
40
30
20
10
0
0.04
0.03
0.02
0.01
0.00
T
= - 55 °C
C
25 °C
125 °C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
I - Drain Current (A)
D
60
80
100
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2000
1600
1200
800
400
0
10
8
V
D
= 15 V
DS
= 50 A
I
C
iss
6
4
C
oss
C
rss
2
0
0
5
10
15
20
25
30
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
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3
SUD50N03-11
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
10
1
V
D
= 10 V
GS
= 25 A
I
1.6
1.2
0.8
0.4
0.0
T = 150 °C
J
T = 25 °C
J
0
0.3
0.6
0.9
1.2
1.5
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- Source-to-Drain Voltage (V)
T
- Junction Temperature (°C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS
60
50
40
30
20
10
0
500
100
Limited
by R
*
DS(on)
10 µs
100 µs
10
1
10 ms
100 ms
1 s, DC
T
= 25 °C
C
Single Pulse
0.1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
* V
GS
minimum V at which R
is specified
GS
DS(on)
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71187.
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4
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
MIN.
0.086
-
2.18
-
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
-
0.265
-
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
-
0.035
-
1.01
0.040
ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347
E1
Notes
•
•
Dimension L3 is for reference only.
Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
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3
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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