SUD50P06-15-T4-GE3 [VISHAY]
Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2;
| 型号： | SUD50P06-15-T4-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50P06-15
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
•
TrenchFET® Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
•
Material categorization:
- 50d
- 50d
0.015 at VGS = - 10 V
0.020 at VGS = - 4.5 V
For definitions of compliance please see
www.vishay.com/doc?99912
- 60
APPLICATIONS
Load Switch
TO-252
•
S
G
Drain Connected to Tab
D
G
S
Top View
Ordering Information
SUD50P06-15-GE3 (Lead (Pb)-free and Halogen-free)
SUD50P06-15-T4-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 60
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 50d
- 27.5
- 80
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
TC = 125 °C
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
- 50
Single Pulse Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
TA = 25 °C
125
mJ
W
113c
2.5b, c
PD
Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
15
Maximum
Unit
t 10 s
18
50
Junction-to-Ambientb
RthJA
Steady State
40
°C/W
RthJC
Junction-to-Case
0.82
1.1
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
Document Number: 68940
S12-2439 Rev. C, 15-Oct-12
www.vishay.com
1
For technical questions, contact: pmostechsupport@vishay.comm
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P06-15
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
- 60
- 1
V
Gate Threshold Voltage
Gate-Body Leakage
- 3
100
- 1
VDS = 0 V, VGS
=
20 V
nA
VDS = - 60 V, VGS = 0 V
DS = - 60 V, VGS = 0 V, TJ = 125 °C
DS = - 60 V, VGS = 0 V, TJ = 150 °C
VDS = -5 V, VGS = - 10 V
IDSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
- 50
- 100
µA
A
ID(on)
- 50
VGS = - 10 V, ID = - 17 A
0.012
61
0.015
0.025
0.028
0.020
V
GS = - 10 V, ID = - 50 A, TJ = 125 °C
GS = - 10 V, ID = - 50 A, TJ = 150 °C
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = - 4.5 V, ID = - 14 A
Forward Transconductancea
Dynamicb
gfs
VDS = - 15 V, ID = - 17 A
S
Ciss
Coss
Crss
Qg
Input Capacitance
4950
480
405
110
19
VGS = 0 V, VDS = - 25 V, f = 1 MHz
VDS = - 30 V, VGS = - 10 V, ID = - 50 A
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
165
Qgs
Qgd
td(on)
tr
28
15
23
70
105
260
260
V
DD = - 30 V, RL = 0.6
ns
Turn-Off Delay Timec
Fall Timec
ID - 50 A, VGEN = - 10 V, RG = 6
td(off)
tf
175
175
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
VSD
trr
Continuous Current
- 50
- 80
- 1.6
70
A
Pulsed Current
Forward Voltagea
Reverse Recovery Time
IF = - 50 A, VGS = 0 V
- 1
45
V
IF = - 50 A, dI/dt = 100 A/µs
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68940
S12-2439 Rev. C, 15-Oct-12
For technical questions, contact: pmostechsupport@vishay.comm
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P06-15
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V
GS
= 10 thru 4 V
3 V
T
= 125 °C
C
25 °C
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
V
1.5
2.0
2.5
3.0
3.5
4.0
V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
0.025
0.020
0.015
0.010
0.005
0.000
25 °C
125 °C
T
= - 55 °C
C
V
= 4.5 V
GS
V
GS
= 10 V
0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
V
- Gate-to-Source Voltage (V)
GS
I
- Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
8000
7000
6000
5000
4000
3000
2000
1000
0
10
8
V
D
= 30 V
DS
= 50 A
I
C
iss
6
4
2
C
oss
C
rss
0
10
20
30
40
50
60
0
20
40
60
80
100
120
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 68940
S12-2439 Rev. C, 15-Oct-12
www.vishay.com
3
For technical questions, contact: pmostechsupport@vishay.comm
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P06-15
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
2.0
V
D
= 10 V
GS
= 17 A
I
1.8
1.6
1.4
1.2
1.0
0.8
0.6
T = 150 °C
J
T = 25 °C
J
10
1
0.0
0.3
V
0.6
0.9
1.2
1.5
- 50 - 25
0
25
50
75
100 125 150
- Source-to-Drain Voltage (V)
SD
T
- Junction Temperature (°C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS (25 °C, unless otherwise noted)
100
60
Limited by R
*
DS(on)
50
40
30
20
10
0
P(t) = 0.0001
BVDSS
Limited
10
P(t) = 0.001
P(t) = 0.01
T
= 25 °C
C
Single Pulse
P(t) = 0.1
P(t) = 1
1
0.1
1
10
100
0
25
50
75
100
125
150
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
* V > minimum V at which R is specified
GS
GS
DS(on)
Drain Current vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68940.
www.vishay.com
4
Document Number: 68940
S12-2439 Rev. C, 15-Oct-12
For technical questions, contact: pmostechsupport@vishay.comm
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
MIN.
0.086
-
2.18
-
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
-
0.265
-
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
-
0.035
-
1.01
0.040
ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347
E1
Notes
•
•
Dimension L3 is for reference only.
Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
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Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SUD50P10-43-E3
TRANSISTOR 9.4 A, 100 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
VISHAY
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