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SUD50P06-15L [VISHAY]

P-Channel 60-V (D-S), 175C MOSFET; P通道60 -V （D -S ） ， 175 2 C MOSFET
SUD50P06-15L
型号： SUD50P06-15L
厂家： VISHAY    VISHAY
描述：

P-Channel 60-V (D-S), 175C MOSFET
P通道60 -V （D -S ） ， 175 2 C MOSFET

晶体 晶体管
文件： 总4页 (文件大小：44K)
中文：  中文翻译
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SUD50P06-15L  
Vishay Siliconix  
New Product  
P-Channel 60-V (D-S), 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 175_C Junction Temperature  
APPLICATIONS  
d
0.015 @ V = -10 V  
GS  
-50  
-60  
0.020 @ V = -4.5  
GS  
V
-50  
D Automtoive 12-V Boardnet  
S
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
D
Ordering Information: SUD50P06-15L  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
-60  
DS  
GS  
V
V
"20  
d
T
= 25_C  
-50  
C
Continuous Drain Current  
I
D
(T = 175_C)  
J
T
= 125_C  
-39  
-80  
-50  
125  
C
A
Pulsed Drain Current  
I
DM  
Avalanche Current  
I
AR  
a
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
mJ  
c
T
= 25_C  
= 25_C  
136  
C
Power Dissipation  
P
W
D
b, c  
3
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
15  
40  
18  
50  
b
Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
_C/W  
Junction-to-Case  
0.82  
1.1  
Notes:  
a. Duty cycle v 1%.  
b. When mounted on 1” square PCB (FR-4 material).  
c. See SOA curve for voltage derating.  
d. Package limited.  
Document Number: 72250  
S-31673—Rev. B 11-Aug-03  
www.vishay.com  
1
 
SUD50P06-15L  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
V
V
GS  
= 0 V, I = -250 mA  
-60  
(BR)DSS  
D
V
V
= V , I = -250 mA  
GS D  
Gate Threshold Voltage  
Gate-Body Leakage  
V
-1  
-3  
DS  
GS(th)  
V
= 0 V, V = "20 V  
GS  
I
"100  
-1  
nA  
DS  
GSS  
V
= -48 V, V = 0 V  
GS  
DS  
V
V
= -48 V, V = 0 V, T = 125_C  
-50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
GS  
J
DSS  
= -48 V, V = 0 V, T = 175_C  
-150  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
= -5 V, V = -10 V  
-50  
A
D(on)  
GS  
V
= -10 V, I = -17 A  
0.012  
0.015  
0.025  
0.030  
0.020  
GS  
D
V
= -10 V, I = -50 A, T = 125_C  
GS  
D
J
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= -10 V, I = -50 A, T = 175_C  
GS  
D
J
V
GS  
= -4.5 V, I = -14 A  
D
a
Forward Transconductance  
g
fs  
V
DS  
= -15 V, I = -17 A  
61  
S
D
Dynamicb  
Input Capacitance  
C
4950  
480  
405  
110  
19  
iss  
Output Capacitance  
C
oss  
V
= 0 V, V = -25 V, f = 1 MHz  
pF  
nC  
GS  
DS  
Reversen Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
165  
g
c
Gate-Source Charge  
Q
Q
V
= -30 V, V = -10 V, I = -50 A  
GS D  
gs  
gd  
DS  
c
Gate-Drain Charge  
28  
c
Turn-On Delay Time  
t
15  
23  
d(on)  
c
Rise Time  
t
70  
105  
260  
260  
r
V
= -30 V, R = 0.6 W  
L
DD  
ns  
c
Turn-Off Delay Time  
t
175  
175  
I
D
] -50 A, V  
= -10 V, R = 6 W  
GEN G  
d(off)  
c
Fall Time  
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
-50  
-80  
1.6  
70  
s
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= -50 A, V = 0 V  
1.0  
45  
V
GS  
Reverse Recovery Time  
t
rr  
I
F
= -50 A, di/dt = 100 A/ms  
ns  
Notes:  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72250  
S-31673—Rev. B 11-Aug-03  
www.vishay.com  
2
 
SUD50P06-15L  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10 thru 4 V  
70  
60  
50  
40  
30  
20  
10  
0
3 V  
T
= 125_C  
C
25_C  
-55_C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
DS  
Transconductance  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
25_C  
T
= -55_C  
C
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
0
10  
20  
30  
40  
50  
60  
0
10  
20  
30  
40  
50  
60  
70  
80  
V
GS  
- Gate-to-Source Voltage (V)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
10  
8
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
V
= 30 V  
= 50 A  
DS  
I
D
C
iss  
6
4
2
C
oss  
C
rss  
0
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
120  
V
DS  
- Drain-to-Source Voltage (V)  
Q
g
- Total Gate Charge (nC)  
Document Number: 72250  
S-31673—Rev. B 11-Aug-03  
www.vishay.com  
3
SUD50P06-15L  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.0  
100  
V
= 10 V  
= 17 A  
GS  
I
D
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
T = 150_C  
J
T = 25_C  
J
10  
1
-50 -25  
0
J
25  
50  
75 100 125 150 175  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
T
- Junction Temperature (_C)  
V
SD  
- Source-to-Drain Voltage (V)  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
60  
50  
40  
30  
20  
10  
0
I
Limited  
100.00  
10.00  
1.00  
DM  
r
Limited  
DS(on)  
P(t) = 0.0001  
I
D(on)  
Limited  
P(t) = 0.001  
P(t) = 0.01  
T
= 25_C  
C
Single Pulse  
P(t) = 0.1  
P(t) = 1  
BV  
DSS  
Limited  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1.0  
10.0  
100.0  
T
- Case Temperature (_C)  
V
DS  
- Drain-to-Source Voltage (V)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-2  
-1  
10  
-3  
10  
Square Wave Pulse Duration (sec)  
10  
1
10  
Document Number: 72250  
S-31673—Rev. B 11-Aug-03  
www.vishay.com  
4

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