SUM110N08-10 [VISHAY]
N-Channel 75-V (D-S) MOSFET; N通道75 -V （D -S ）的MOSFET
| 型号： | SUM110N08-10 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 75-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N08-10
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
V(BR)DSS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance Package
APPLICATIONS
75
0.010 @ V = 10 V
110
GS
D Automotive
D
− Boardnet 42-VEP and ABS
− Motor Drives
D High Current
D DC/DC Converters
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N08-10
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
75
DS
V
GS
V
"20
T
= 25_C
110
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
= 125_C
63
C
A
Pulsed Drain Current
Avalanche Current
I
350
75
DM
I
AR
a
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
280
mJ
b
T
= 25_C
200
C
a
Maximum Power Dissipation
P
W
D
c
T
A
= 25_C
3.7
Operating Junction and Storage Temperature Range
T , T
J
−55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
Junction-to-Ambient
Junction-to-Case
PCB Mount
R
40
thJA
thJC
C/W
R
0.75
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71838
S-32413—Rev. C, 24-Nov-03
www.vishay.com
1
SUM110N08-10
Vishay Siliconix
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
75
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
2.5
4.0
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
Gate-Body Leakage
I
"100
nA
GSS
V
DS
= 75 V, V = 0 V
1
GS
V
V
= 75 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 75 V, V = 0 V, T = 175_C
250
DS
GS
J
a
On-State Drain Current
I
V
DS
w 5 V, V = 10 V
120
30
A
D(on)
GS
V
GS
= 10 V, I = 30 A
0.0055
0.010
0.0185
0.0245
D
a
V
V
= 10 V, I = 30 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
S
D
Dynamicb
Input Capacitance
C
C
5250
700
310
90
iss
Output Capacitance
pF
nC
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
165
g
c
Gate-Source Charge
Q
Q
24
V
DS
= 35 V, V = 10 V, I = 110 A
GS D
gs
gd
c
Gate-Drain Charge
27
c
Turn-On Delay Time
t
20
30
150
70
d(on)
c
Rise Time
t
r
100
45
V
= 35 V, R = 0.4 W
L
GEN G
DD
ns
c
I
D
^ 110 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
75
115
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
110
350
S
A
Pulsed Current
I
SM
a
I
= 110 A, V = 0 V
GS
Forward Voltage
V
1.0
75
1.5
120
7
V
ns
A
F
SD
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
3.5
0.13
I
F
= 85 A, di/dt = 100 A/ms
Q
0.30
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71838
S-32413—Rev. C, 24-Nov-03
www.vishay.com
2
SUM110N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
160
120
80
V
GS
= 10 thru 6 V
200
150
100
50
5 V
T
= 125_C
C
40
25_C
−55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
200
160
120
80
0.010
0.008
0.006
0.004
0.002
0.000
T
= −55_C
C
25_C
V
GS
= 10 V
125_C
40
0
0
15
30
45
60
75
90
0
20
40
60
80
100
120
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
20
16
12
8
8000
7000
6000
5000
4000
3000
2000
1000
0
V
D
= 35 V
DS
I
= 85 A
C
iss
C
rss
4
C
oss
0
0
15
30
45
60
75
0
30
60
Q − Total Gate Charge (nC)
g
90
120
150
180
V
DS
− Drain-to-Source Voltage (V)
Document Number: 71838
S-32413—Rev. C, 24-Nov-03
www.vishay.com
3
SUM110N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0.0
100
V
D
= 10 V
GS
I
= 30 A
T = 150_C
J
T = 25_C
J
10
1
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V − Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
− Junction Temperature (_C)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
100
94
88
82
76
70
I
D
= 250 mA
100
10
1
I
AV
(A) @ T = 25_C
A
I
AV
(A) @ T = 150_C
A
0.1
−50 −25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T
− Junction Temperature (_C)
J
Document Number: 71838
S-32413—Rev. C, 24-Nov-03
www.vishay.com
4
SUM110N08-10
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
120
100
80
60
40
20
0
Limited
by r
DS(on)
10 ms
100 ms
1 ms
100
10
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
− Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71838
S-32413—Rev. C, 24-Nov-03
www.vishay.com
5
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