V40100PG [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier; 双高压Trench MOS势垒肖特基整流器型号: | V40100PG |
厂家: | VISHAY |
描述: | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
文件: | 总5页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V40100PG
Vishay General Semiconductor
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.420 V at I = 5 A
F
F
FEATURES
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
3
• Solder Dip 260 °C, 40 seconds
2
1
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-247AD (TO-3P)
TYPICAL APPLICATIONS
PIN 2
CASE
PIN 1
PIN 3
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 20 A
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
VRRM
100 V
IFSM
250 A
VF at IF = 20 A
Tj max.
0.67 V
150 °C
Polarity: As marked
Mounting Torque: 10 in-lbs Maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V40100PG
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
per device
Maximum average forward rectified (see Fig. 1)
per diode
40
20
IF(AV)
A
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dv/dt
1.0
A
10000
V/µs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
at IR = 1.0 mA TJ = 25 °C
V(BR)
100 (minimum)
-
V
at IF = 5 A
0.490
0.572
0.731
-
-
IF = 10 A
IF = 20 A
TJ = 25 °C
0.81
Instantaneous forward voltage (1) per
diode
VF
V
at IF = 5 A
IF = 10 A
IF = 20 A
0.42
0.50
0.67
-
-
TJ = 125 °C
0.73
Document Number 88972
18-Aug-06
www.vishay.com
1
V40100PG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
TJ = 25 °C
TJ = 125 °C
8.4
7.4
300
15
µA
mA
at VR = 70 V
Reverse current at rated VR (1) per diode
IR
TJ = 25 °C
TJ = 125 °C
40.5
18.2
500
35
µA
mA
at VR = 100 V
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
V40100PG
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V40100PG-E3/45
6.109
45
30/Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
50
16
D = 0.8
D = 0.5
Resistive or Inductive Load
14
12
10
8
D = 0.3
D = 0.2
40
30
20
D = 1.0
D = 0.1
T
6
4
2
0
10
0
D = tp/T tp
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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Document Number 88972
18-Aug-06
V40100PG
Vishay General Semiconductor
10000
300
250
200
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ max.
8.3 ms Single Half Sine-Wave
150
100
1000
50
0
100
0.1
1
10
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 6. Typical Junction Capacitance Per Diode
100
10
Junction to Case
TJ = 150 °C
TJ = 125 °C
10
1
1
TJ = 25 °C
0.1
0.1
0.01
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
Document Number 88972
18-Aug-06
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V40100PG
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.203 (5.16)
0.193 (4.90)
0.078 REF
(1.98)
0.323 (8.2)
0.313 (7.9)
10
30
0.170
(4.3)
10
TYP.
BOTH SIDES
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
1
REF.
2
3
1
BOTH
SIDES
0.086 (2.18)
0.076 (1.93)
0.118 (3.0)
0.108 (2.7)
0.127 (3.22)
0.117 (2.97)
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.225 (5.7)
0.205 (5.2)
0.030 (0.76)
0.020 (0.51)
0.048 (1.22)
0.044 (1.12)
PIN 2
PIN 1
PIN 3
CASE
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Document Number 88972
18-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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