VS-MUR3020WTPBF [VISHAY]
Ultrafast Rectifier, 2 x 15 A FRED Pt®; 超快整流器, 2× 15 A FRED Pt®型号: | VS-MUR3020WTPBF |
厂家: | VISHAY |
描述: | Ultrafast Rectifier, 2 x 15 A FRED Pt® |
文件: | 总8页 (文件大小:163K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt®
Base
FEATURES
common
cathode
• Ultrafast recovery time
2
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Designed
JEDEC-JESD47
and
qualified
according
to
1
3
Anode
Anode
2
2
1
TO-247AC
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
Common
cathode
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
VS-MUR3020WT... is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
Package
TO-247AC
2 x 15 A
200 V
IF(AV)
VR
VF at IF
1.05 V
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
t
rr typ.
See Recovery table
175 °C
TJ max.
Diode variation
Common cathode
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
200
15
UNITS
Peak repetitive reverse voltage
VRRM
V
per leg
total device
Average rectified forward current
IF(AV)
Rated VR, TC = 150 °C
30
A
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
IFSM
IFM
200
30
Rated VR, square wave, 20 kHz, TC = 150 °C
- 65 to
175
Operating junction and storage temperatures
TJ, TStg
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 15 A
200
-
-
V
-
-
-
-
-
-
-
-
1.05
0.85
10
Forward voltage
VF
IR
IF = 15 A, TJ = 150 °C
VR = VR rated
-
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 200 V
-
500
-
Junction capacitance
Series inductance
CT
LS
55
12
pF
nH
Measured lead to lead 5 mm from package body
-
Revision: 15-Aug-11
Document Number: 94080
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
35
-
Reverse recovery time
trr
22
ns
TJ = 125 °C
39
-
IF = 15 A
TJ = 25 °C
1.6
4.1
19
-
Peak recovery current
IRRM
dIF/dt = 200 A/μs
A
TJ = 125 °C
-
VR = 160 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
90
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
-
-
1.5
40
-
Thermal resistance,
junction to ambient per leg
Typical socket mount
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and
greased
0.5
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC
MUR3020WT
Revision: 15-Aug-11
Document Number: 94080
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
100
10
1
1000
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
0.1
TJ = 25 °C
0.1
0.01
0
50
100
150
200
250
0
0.3
0.6
0.9
1.2
1.5
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.50
D = 0.20
D = 0.10
0.1
t2
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
.
Single pulse
(thermal resistance)
.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 15-Aug-11
Document Number: 94080
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
60
VR = 160 V
TJ = 125 °C
TJ = 25 °C
50
40
30
20
10
IF = 30 A
IF = 15 A
IF = 8 A
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
0
5
10
15
20
25
100
1000
dIF/dt (A/µs)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
25
200
VR = 160 V
TJ = 125 °C
TJ = 25 °C
20
15
10
5
160
120
80
IF = 30 A
IF = 15 A
IF = 8 A
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
40
DC
0
0
0
5
10
15
20
25
100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 15-Aug-11
Document Number: 94080
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Aug-11
Document Number: 94080
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MUR 30
20
WT PbF
1
2
3
4
5
6
1
2
3
4
5
6
-
-
-
-
-
Vishay Semiconductors product
Ultrafast MUR series (TO-247AC)
Current rating (30 = 30 A)
Voltage rating (20 = 200 V)
WT = Center tap (dual) TO-247
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-MUR3020WTPbF
VS-MUR3020WT-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Part marking information
TO-247ACPbF
TO-247AC-N3
Revision: 15-Aug-11
Document Number: 94080
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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