WSD451F [WEITRON]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | WSD451F |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总3页 (文件大小：696K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD451F
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
100m AMPERES
40 VOLTS
Features:
*Small mold type.
*Low VF
*High reliability.
3
Construction:
Silicon epitaxial planer
1
2
SOT-323(SC-70)
Unit:mm
SOT-323 Outline Demensions
A
SOT-323
Dim
A
B
C
D
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
B
C
TOP VIE W
D
G
E
E
G
H
J
K
L
H
K
L
M
J
M
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WEITRON
WSD451F
MaximumRatings (T =25°C Unless otherwise noted)
a
Symbol
Characteristic
Value
Unit
Reverse Voltage (repetitive peak)
V
RM
40
Volts
Reverse Voltage (DC)
V
R
40
100
1
mA
mA
I
Average rectified forward current
Forward Current surge peak (60Hz, 1cyc)
O
A
I
FSM
Operating Junction
Temperature Range
125
150
T
J
°C
°C
Storage Temperature Range
T
stg
ElectricalCharacteristics (T =25 C Unless otherwise noted)
A
Symbol
Min
Typ
Max
Unit
Characteristic
Forward Voltage
V 1
F
0.55
0.34
-
-
-
-
I =100mA
F
I =10mA
F
Volts
V 2
F
Capacitance between terminals
(V =10V, f=1.0MHz)
R
F
P
6.0
-
-
C
T
-
-
Reverse currect
(V =10V)
R
I
µAdc
R
30
DeviceMarking
Item
EqivalentCir cuitdiagram
Marking
B4 , KL5
3
1
WSD451F
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WSD451F
1
100m
10m
10m
1m
Typ.
Typ.
pulse measurement
pulse measurement
Ta=125°C
100µ
10µ
1µ
75°C
C
°
125
=
C
1m
°
C
Ta
°
C
75
25
°
25
25°C
100µ
10µ
0.1µ
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : V V)
0
5
10
15
20
25
30
V)
35
F
(
REVERSE VOLTAGE : V
R
(
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
10
1
100
80
60
40
20
0
0.1
0
25
50
75
100
125
0
5
10
15
20
(V
25
AMBIENT TEMPERATURE : Ta (°C)
REVERSE VOLTAGE : V
R
)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
Fig. 3 Capacitance between
terminals characteristics
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