WSD495 [WEITRON]
Surface Mount Schottky Barrier Diode; 表面贴装肖特基二极管
| 型号： | WSD495 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD495
Surface Mount Schottky Barrier Diode
SCHOTTKY BARRIER
RECTIFIERS
Features:
*High Reliability
*Fast Switching
400mAMPERES
40VOLTS
*PN Junction Guard Ring for Transient and ESD Protection
MECHANICAL DATA
3
*Case : SOT-346, Molded Plastic
*Terminals : Solderable per MIL-STD-202,Method 208
*Polarity : See Diagrams Below
2
1
*Weight : 0.008 grams (approx.)
*Mounting Position : Any
SC-59
SC-59 Outline Dimension
A
L
SC-59
Dim Min
Max
A
B
C
D
G
H
J
2.70 3.10
1.30 1.70
1.00 1.30
0.35 0.50
1.70 2.30
0.00 0.10
0.10 0.26
0.20 0.60
1.25 1.65
2.25 3.00
3
S
B
Top View
2
1
D
G
K
L
S
J
C
All Dimension in mm
K
H
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WSD495
Maximum Ratings(T =25 C Unless otherwise noted)
J
Symbol
Characteristic
WSD495
Unit
40
Volts
V
R
Reverse Voltage
(1)
Average Rectifier
Forward Current
mA
A
400
2.0
I
F(AV)
Peak Forward Surge Current(2)
I
FSM
Operating Junction
Temperature Range
Storage Temperature Range
T
J
C
-40 to +125
T
stg
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Max
Symbol
Min
Unit
Characteristic
Reverse Breakdown Voltage (I =100µA)
R
V
40
-
Volts
Volts
(BR)R
Forward Voltage
V
F
-
I =10mA
0.30
0.50
F
I =200mA
F
Reverse Leakage
-
µAdc
70
I
R
V =10V
R
NOTE:
1. Mean Output Current Per Element: I (AV)/2
F
2. 60HE for 1
Device Marking
Eqivalent Circuit diagram
Item
Marking
1
04F
WSD495
3
2
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WSD495
Electrical characteristic curves (Ta=25 C)
100m
1
10m
Ta 125 C
100m
1m
C
5
2
C
1
5
10m
1m
75 C
C
7
a
T
5
C
2
u
ꢀ
100
0
4
25 C
0 C
10u
1
100u
ꢀ
uꢀ 0
10
20
30
40
0
0.1
0.2
0.3
0.4
0.5
0.6
(V)
0.7
REVERSE VOLTAGE : V
R
(V)
FORWARD VOLTAGE : V
F
Fig.2 Reverse characteristics
Fig.1 Forward characteristics
100
10
1
0
5
10
15
20
25
30
(V)
3
REVERSE VOLTAGE : V
R
Fig.3 Capacitance between
terminals characteristics
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