FMMT620TC [ZETEX]

SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR; SuperSOT 80V NPN硅低饱和晶体管
FMMT620TC
型号: FMMT620TC
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN硅低饱和晶体管

晶体 晶体管
文件: 总6页 (文件大小:298K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FMMT620  
SuperSOT™  
80V NPN SILICON LOW SATURATION TRANSISTOR  
SUMMARY  
V
CEO=80V; RSAT = 90m ; IC= 0.5A  
DESCRIPTION  
Enhancing the existing SuperSOT range this 80V NPN transistor utilises the  
Zetex matrix structure combined with advanced assembly techniques. Users  
are provided with high Hfe and very low sat performance ensuring low on  
state losses.  
SOT23  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 3.0A  
IC=1.5A Continuous Collector Current  
SOT23 package  
APPLICATIONS  
DC - DC Modules  
Power Management Functions  
CCFL Backlighting Inverters  
Motor control and drive functions  
E
C
B
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
Top View  
FMMT620TA  
FMMT620TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
620  
ISSUE 1 - JANUARY 2001  
1
FMMT620  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
80  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
CBO  
CEO  
EBO  
80  
V
5
V
I
I
I
5
A
CM  
Continuous Collector Current  
Base Current  
1.5  
500  
A
C
B
mA  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
P
625  
5
mW  
mW/°C  
D
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
P
806  
6.4  
mW  
mW/°C  
D
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Junction to Ambient (a)  
Junction to Ambient (b)  
R
R
200  
155  
°C/W  
°C/W  
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
ISSUE 1 - JANUARY 2001  
2
FMMT620  
TYPICAL CHARACTERISTICS  
ISSUE 1 - JANUARY 2001  
3
FMMT620  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
100  
80  
7
180  
V
I =100A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
110  
8
V
I =10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
V
I =100A  
E
(BR)EBO  
CBO  
I
I
I
100  
100  
100  
nA  
nA  
nA  
V
V
V
=80V  
CB  
Emitter Cut-Off Current  
=5.5V  
EBO  
EB  
Collector Emitter Cut-Off Current  
=80V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
15  
45  
145  
160  
20  
60  
185  
200  
mV  
mV  
mV  
mV  
I =0.1A, I =10mA*  
C B  
CE(sat)  
I =0.5A, I =50mA*  
C
B
I =1A, I =20mA*  
C B  
I =1.5A, I =50mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
0.86 1.0  
0.82 0.95  
450  
450  
170  
90  
V
V
I =1.5A, I =50mA*  
C B  
BE(sat)  
BE(on)  
FE  
I =1.5A, V =2V*  
C
CE  
Static Forward Current Transfer  
Ratio  
200  
300  
110  
60  
I =10mA, V =2V*  
C CE  
900  
I =200mA, V =2V*  
C CE  
I =1A, V =2V*  
C
CE  
I =1.5A, V =2V*  
C
CE  
20  
30  
10  
I =3A, V =2V*  
C CE  
I =5A, V =2V*  
C CE  
Transition Frequency  
f
100  
160  
MHz  
I =50mA, V =10V  
T
C
CE  
f=100MHz  
Output Capacitance  
Turn-On Time  
C
11.5  
18  
pF  
ns  
ns  
V
=10V, f=1MHz  
CB  
obo  
(on)  
(off)  
t
t
86  
V
=10V, I =500mA  
CC C  
=I =25mA  
I
B1 B2  
Turn-Off Time  
1128  
*Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%  
ISSUE 1 - JANUARY 2001  
4
FMMT620  
TYPICAL CHARACTERISTICS  
ISSUE 1 - JANUARY 2001  
5
FMMT620  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
DIM Millimetres  
Inches  
Min  
Min  
Max  
3.05  
1.40  
1.10  
0.53  
0.15  
Max  
A
B
C
D
F
2.67  
0.105  
0.120  
0.055  
0.043  
0.021  
0.0059  
1.20  
0.047  
0.37  
0.0145  
0.0033  
NOM 0.075  
0.0004  
0.0825  
NOM 0.037  
0.085  
NOM 1.9  
0.01  
G
K
L
0.10  
2.50  
0.004  
2.10  
0.0985  
N
NOM 0.95  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
© Zetex plc 2001  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - JANUARY 2001  
6

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