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FMOSAB52N06-H

更新时间：2025-04-28 11:17:32

品牌：FORMOSA

描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 60; ID(A) : 52; PD(W) : 30; EAS(mJ) : 80;

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概述
数据手册

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FMOSAB52N06-H 概述

Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 60; ID(A) : 52; PD(W) : 30; EAS(mJ) : 80;

FMOSAB52N06-H 数据手册

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N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

List

List.................................................................................................1

Package outline...............................................................................2

Features..........................................................................................2

Mechanical data...............................................................................2

Maximum ratings .............................................................................2

Electrical characteristics...................................................................3

Typical Electrical and Thermal characteristic curves.........................4~6

Pinning information...........................................................................6

Marking............................................................................................6

Suggested solder pad layout...............................................................6

Packing Information..........................................................................7

Reel Packing.....................................................................................8

Suggested thermal profiles for soldering processes.............................8

High reliability test capabilities...........................................................9

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 1

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

52A 60V N-Channel

Enhancement Mode Power MOSFET

Package outline

Features

• V_DS= 60, I_D= 52A

T3333P8

0.033(0.85)

0.028(0.70)

• R_DS(ON)< 6.2mΩ, @V_GS=10V, I_D=20A

• R_DS(ON)< 8.3mΩ, @V_GS=4.5V, I_D=15A

• Provide ultra-low R_DS(ON)and low gate charge.

• 100% UIS tested, 100% Rg tested.

• Lead free product is acquired

10^o~15^o

0.006(0.15) Max.

• Green device available

• Lead-free parts meet RoHS requirements

• Suffix "-H" indicates Halogen-free part, ex.FMOSAB52N06-H

0.010(0.25)

0.004(0.10)

0.026(0.65)BSC

0.104(2.65)

0.026(0.65)

0.011(0.28)

0.090(2.29)

Application

• Power management

• PWM application

• Load switch

0.128(3.25)

0.118(3.00)

Mechanical data

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic, T3333P8

• Mounting Position : Any

0.016(0.40)

0.008(0.20)

0.020(0.50)

0.012(0.30)

Dimensions in inches and (millimeters)

• Weight : Approximated 0.02 gram

Maximum ratings ^{(At T}_C⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

V_DS

Ratings

Unit

Drain-source voltage

Gate-source voltage

V_GS

±20

Continuous drain Current ^{(Note 1)}

(T_C=25^OC)

I_D

(T_C=100^OC)

Pulsed drain current (Note 2)

I_DM

I_AS

192

Avalanche current

Avalanche energy

Power dissipation

(Note 3)

E_AS

(Note4)

(T_C=25^OC)

P_D

(T_C=100^OC)

11.9

Operating Junction temperature range

Storage temperature range

T_j

+150

-55 to +150

℃

T_stg

R_θJA

R_θJC

℃

Thermal resistance junction to ambient

Thermal resistance junction to case

℃/W

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 2

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

Electrical characteristics ^{(At T}_j⁼²⁵^o^{C unless otherwise noted)}

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Static Parameters

Drain-source breakdown voltage

BV_DSS

I_D=250µA, V_GS=0V

V_DS=48V, V_GS=0V

at T_J= 25^OC

at T_J= 55^OC

Drain-source leakage current

I_DSS

µA

Gate-source leakage current

Gate threshold voltage

I_GSS

V_GS=±20V, V_DS=0V

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=20A

V_GS=4.5V, I_D=15A

V_DS=5V, I_D=20A

±100

2.5

V_GS(TH)

1.2

1.5

5.0

6.6

6.2

mΩ

Static drain-source on-state resistance

Forward Transconductance

R_DS(ON)

8.3

g_FS

Dynamic parameters (Note 5)

Input capacitance

C_iss

C_oss

C_rss

R_g

2122

440

4.4

Out capacitance

V_GS=0V, V_DS=30V, f=1.0MHz

V_GS=0V, V_DS=0V, f=1.0MHz

Reverse transfer capacitance

Gate Resistance

1.7

Switching parameters (Note 5)

Total gate charge (@V_GS=10V)

Total gate charge (@V_GS=4.5V)

Gate to source charge

Q_g

19.2

4.8

5.4

8.0

5.1

V_GS=0 to 10V, V_DS=30V, I_D=20A

Q_gs

Q_gd

t_d(ON)

t_r

Gate to drain charge

Turn-on delay time

Rise time

V_DS=30V, V_GS=10V

R_L=1.5Ω, R_GEN=6Ω

Turn-off delay time

t_d(OFF)

t_f

Fall time

14.8

Body diode reverse recovery time

Body diode reverse recovery charge

Trr

Qrr

I_F= 20A, dI_F/dt = 100A/µs

Source-drain diode ratings and characteristics

Drain-source diode forward voltage

V_SD

I_S

I_S=1A, V_GS=0V, T_j=25^OC

T_C=25^OC

0.7

1.0

Maximum body-diode continuous current

Note :

1. Computed continuous current assumes the condition of T_{J_MAX}while the actual continuous current depends on the thermal

& electro-mechanical application board design.

2. This single-pulse measurement was taken under T_{J_MAX}=150^OC

3. This single-pulse measurement was taken under the following condition [ L =100µH, V_GS=50V, V_DD=30V]

while its value is limited by T_{J_MAX}=150^OC

4. The power dissipation P_Dis based on T_{J_MAX}=150^OC.

5. This value is guaranteed by design hence it is not included in the production test.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BK20

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 3

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

Typical Electrical and Thermal characteristic curves

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 4

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

Typical Electrical and Thermal characteristic curves

V_GS@I_D=1mA

V_GS@I_D=250µA

-60

-30

T_J, Junction Temperature (℃)

Figure 12：Typical Gate Threshold variation vs. Junction temperature

120

160

180

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 5

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

Typical Electrical and Thermal characteristic curves

Pinning information

Simplified outline

Symbol

Pin 1, 2, 3 Source

Pin 4 Gate

Pin 1 Indicator

Pin 5, 6, 7, 8, Drain

Marking

Type number

Marking code

FMOSAB52N06

AB52N06

SL0606A

Suggested solder pad layout

2.80

Note:

1.Controlling dimension:in millimeters.

2.General tolerance:±0.05mm.

3.The pad layout is for reference purposes only.

0.40

0.65

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 6

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

Packing information

P⁰

P¹

Solid dot = Pin1 indicate

D²

D¹

W¹

unit:mm

Symbol

T3333P8

Item

Tolerance

Carrier width

0.1

2.0

min

2.0

min

0.5

0.1

0.3

1.0

3.55

1.10

1.50

330.00

100.00

Carrier length

Carrier depth

Sprocket hole

13" Reel outside diameter

13" Reel inner diameter

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

D¹

D²

13.00

1.75

5.50

8.00

4.00

2.00

0.23

12.00

17.60

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

P⁰

P¹

W¹

Reel width

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 7

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

Reel packing

COMPONENT

SPACING

(m/m)

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

REEL

(pcs)

BOX

(pcs)

PACKAGE

T3333P8

REEL SIZE

13"

CARTON

(pcs)

5,000

8.0

355*335*38

330

350*330*360

10,000

80,000

Suggested thermal profiles for soldering processes

1.Storage environment: Temperature=5^oC~40^oC Humidity=55%±25%

2.Reflow soldering of surface-mount devices

t25^oC to Peak

3.Reflow soldering

Profile Feature

Average ramp-up rate(T

Preheat

Soldering Condition

<3^oC/sec

to T )

-Temperature Min(Tsmin)

-Temperature Max(Tsmax)

-Time(min to max)(t

150^oC

200^oC

60~120sec

)

Tsmax to T

-Ramp-upRate

<3^oC/sec

Time maintained above:

-Temperature(T

-Time(t

)

217^oC

60~260sec

)

Peak Temperature(T

)

255^oC-0/+5^oC

Time within 5^oC of actual Peak

10~30sec

Temperature(t )

Ramp-down Rate

Time 25^oC to Peak Temperature

<3^oC/sec

<6minutes

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 8

DS-2311BK20

N-Channel SMD Power MOSFET

Formosa MS

FMOSAB52N06

High reliability test capabilities

Item Test

Conditions

Reference

at 260±5^OC for 10 sec.

MIL-STD-750D

METHOD-2031

1. Solder Resistance

MIL-STD-202F

METHOD-208

at 245±5^OC for 5 sec.

2. Solderability

MIL-STD-750D

METHOD-1038

^DS=0.8 X BV^DSS,at T_J=150^OC for 168 hrs.

3. High Temperature Reverse Bias

4. Pressure Cooker

15P_SIGat T_A=121^OC 100%RH for 4 hrs.

-55^OC to +125^OC dwelled for 30 min total 10 cycles.

at T_A=85^OC, 85%RH for 1000 hrs.

JESD22-A102

MIL-STD-750D

METHOD-1051

5. Temperature Cycling

6. Humidity

MIL-STD-750D

METHOD-1021

at T_A=175^OC for 1000 hrs.

7. High Temperature Storage Life

MIL-STD-750D

METHOD-1031

http://www.formosams.com

TEL:886-2-22696661

Formosa MS FAX:886-2-22696141

Document ID

DS-2311BK20

Issued Date Revised Date Revision

2022/01/05 2023/05/15

Page

Page 9

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