1ED020I12-S
更新时间:2024-12-04 13:02:35
品牌:INFINEON
描述:Half Bridge Based MOSFET Driver, 2A, PDSO16, GREEN, PLASTIC, SOP-16
1ED020I12-S 概述
Half Bridge Based MOSFET Driver, 2A, PDSO16, GREEN, PLASTIC, SOP-16 电源配件 MOSFET 驱动器
1ED020I12-S 规格参数
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SOP, SOP16,.4 | 针数: | 16 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.65 |
Is Samacsys: | N | 高边驱动器: | NO |
接口集成电路类型: | HALF BRIDGE BASED IGBT DRIVER | JESD-30 代码: | R-PDSO-G16 |
JESD-609代码: | e3 | 长度: | 10.34 mm |
功能数量: | 1 | 端子数量: | 16 |
最高工作温度: | 105 °C | 最低工作温度: | -40 °C |
标称输出峰值电流: | 2 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP16,.4 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
电源: | -8,5,15 V | 认证状态: | Not Qualified |
座面最大高度: | 2.64 mm | 子类别: | Peripheral Drivers |
最大供电电压: | 5.5 V | 最小供电电压: | 4.5 V |
标称供电电压: | 5 V | 表面贴装: | YES |
温度等级: | INDUSTRIAL | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 宽度: | 7.52 mm |
Base Number Matches: | 1 |
1ED020I12-S 数据手册
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PDF下载Datasheet, Version 2.2, December 2009
EICEDRIVERTM
1ED020I12-F
Single IGBT Driver IC
Power Management & Drives
N e v e r s t o p t h i n k i n g .
5
Power Management & Drives
Revision History:
Previous Version:
December 2009
2.1
Version 2.2
Page
6
Subjects (major changes since last revision)
2.2.3 Watchdog Timer
14
4.4.6 Dynamic Characteristics
Edition 2009-12-03
Published by Infineon Technologies AG,
Campeon 1-12,
85579 Neubiberg, Germany
© Infineon Technologies AG 2010.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
EICEDRIVERTM
1ED020I12-F
Single IGBT Driver IC
Product Highlights
•
•
•
•
•
•
Coreless transformer isolated driver
Galvanic Insulation
Integrated protection features
Suitable for operation at high ambient temperature
Cost effective technology
Approvals: DIN EN 60747-5-2, UL1577
Features
Typical
Application
•
•
•
•
•
Single channel isolated IGBT Driver
For 600V/1200V IGBTs
2A rail-to-rail output
Vcesat-detection
•
•
•
AC-Drives
UPS-Systems
Welding
Active Miller Clamp
VCC1
VCC2,H
DESAT
IN+, IN-, /RST
OUT
EiceDRIVERTM
1ED020I12-F
/FLT, RDY
CLAMP
VEE2,H GND2,H
CPU
VCC2,L
DESAT
IN+, IN-, /RST
/FLT, RDY
OUT
EiceDRIVERTM
1ED020I12-F
CLAMP
GND1
VEE2,L GND2,L
Figure 1: Typical Application
Type
Gate drive current
Package
1ED020I12-F
+/- 2A
PG-DSO-16-15
Datasheet
3
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Table of Contents
Page
1
Blockdiagram and Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Internal Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Undervoltage Lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
READY status output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Watchdog Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Active Shut-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Non-Inverting and Inverting Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Driver Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
External Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Desaturation Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Active Miller Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
RESET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1
2.2
2.2.1
2.2.2
2.2.3
2.2.4
2.3
2.4
2.5
2.5.1
2.5.2
2.5.3
2.6
3
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1
3.2
4
Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Operating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Recommended Operating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Voltage Supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Logic Input and Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Active Miller Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Desaturation protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Active Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.1
4.2
4.3
4.4
4.4.1
4.4.2
4.4.3
4.4.4
4.4.5
4.4.6
4.4.7
4.4.8
5
Insulation Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DIN EN 60747-5-2 (VDE 0884 Teil 2): 2003-01. Basic Insulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
UL 1577 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.1
5.2
5.3
6
7
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
8
Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Reference Layout for Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Printed Circuit Board Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8.1
8.2
Datasheet
4
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
1
Blockdiagram and Application
K4
2V
9
8
7
6
5
4
3
2
1
GND1
IN+
VEE2
CLA M P
0
0
&
∆t
∆t
0
CLAMP
10
11
12
13
14
15
16
VCC2
VEE2
/RST
RX
LOGIC
TX
RX
VEE2
LOGIC
OUT
IN-
/FLT
VCC2
NC
RDY
/FLT
UVLO
TX
UVLO
GND2
DESAT
VEE2
/RST
DESAT
LOGIC
LOGIC
I3
K3
VCC1
GND1
9V
I4
GND2
Figure 2: Blockdiagram 1ED020I12-F
Figure 3: Application example
Datasheet
5
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
2
Functional Description
2.1
Introduction
2.2.2
READY status output
The READY output shows the status of three internal
The 1ED020I12-F is an advanced IGBT gate driver that can
be also used for driving power MOS devices. Control and
protection functions are included to make possible the design
of high reliability systems.
The device consists of two galvanic separated parts. The
input chip can be directly connected to a standard 5V DSP or
microcontroller with CMOS in/output and the output chip is
connected to the high voltage side.
protection features.
•
•
•
UVLO of the input chip
UVLO of the output chip after a short delay
Internal signal transmission
It is not necessary to reset the READY signal since its state
only depends on the status of the former protection signals.
An effective active Miller clamp function avoids the need of
negative gate driving in most applications and allows the use
of a simple bootstrap supply for the high side driver.
A rail-to-rail driver output enables the user to provide easy
clamping of the IGBTs gate voltage during short circuit of
the IGBT. So an increase of short circuit current due to the
feedback via the Miller capacitance can be avoided. Further,
a rail-to-rail output reduces power dissipation.
2.2.3
Watchdog Timer
The 1ED020I12-F incorporates two level of signal
transmission security implemented through two independent
watchdog timers. First level ensures the short term signal
integrity by resending the (turn on/off) signals with a
watchdog period of typical 500ns. The second level monitors
during normal operation the internal signal transmission. If
the transmission fails for a given time, the IGBT is switched
off and the READY output reports an internal error.
The device also includes an IGBT desaturation protection
with a FAULT status output.
A READY status output reports if the device is supplied and
operates correctly.
2.2.4
Active Shut-Down
The Active Shut-Down feature ensures a safe IGBT off-state
if the output chip is not connected to the power supply.
2.2
Internal Protection Features
2.3
Non-Inverting and Inverting Inputs
2.2.1
Undervoltage Lockout (UVLO)
There are two possible input modes to control the IGBT. At
non-inverting mode IN+ controls the driver output while IN-
is set to low. At inverting mode IN- controls the driver output
while IN+ is set to high. A minimum input pulse width is
defined to filter occasional glitches.
To ensure correct switching of IGBTs the device is equipped
with an undervoltage lockout for both chips.
If the power supply voltage VVCC1 of the input chip drops
below VUVLOL1 a turn-off signal is sent to the output chip
before power-down. The IGBT is switched off and the
signals at IN+ and IN- are ignored as long as VVCC1 reaches
the power-up voltage VUVLOH1
.
2.4
Driver Output
If the power supply voltage VVCC2 of the output chip goes
down below VUVLOL2 the IGBT is switched off and signals
from the input chip are ignored as long as VVCC2 reaches the
The output driver section uses only MOSFETs to provide a
rail-to-rail output. This feature permits that tight control of
gate voltage during on-state and short circuit can be
maintained as long as the drivers supply is stable. Due to the
low internal voltage drop, switching behaviour of the IGBT
is predominantly governed by the gate resistor. Furthermore,
it reduces the power to be dissipated by the driver.
power-up voltage VUVLOH2
.
Datasheet
6
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
2.5
External Protection Features
Desaturation Protection
2.5.1
A desaturation protection ensures the protection of the IGBT
at short circuit. When the DESAT voltage goes up and
reaches 9V, the output is driven low. Further, the /FAULT
output is activated. A programmable blanking time is used to
allow enough time for IGBT saturation. Blanking time is
provided by a highly precise internal current source and an
external capacitor.
2.5.2
Active Miller Clamping
A Miller clamp allows sinking the Miller current during a
high dV/dt situation. Therefore, the use of a negative supply
voltage can be avoided in many applications. During turn-
off, the gate voltage is monitored and the clamp output is
activated when the gate voltage goes below 2V (related to
VEE2).
2.5.3
Short Circuit Clamping
During short circuit the IGBTs gate voltage tends to rise
because of the feedback via the Miller capacitance. An
additional protection circuit connected to OUT and CLAMP
limits this voltage to a value slightly higher than the supply
voltage. A current of maximum 500 mA for 10us may be fed
back to the supply through one of this paths. If higher
currents are expected or a tighter clamping is desired external
Schottky diodes may be added.
2.6
RESET
The reset input has two functions.
Firstly, /RST is in charge of setting back the FAULT output.
If /RST is low longer than a given time , /FLT will be reseted
at the rising edge of /RST; otherwise, it will remain
unchanged. Moreover, it works as enable/shutdown of the
input logic.
Datasheet
7
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
3
Pin Configuration and Functionality
3.1
Pin Configuration
Pin Symbol
Function
1
2
3
4
5
6
7
8
9
VEE2
Negative power supply output side
DESAT
GND2
NC
VCC2
OUT
CLAMP
VEE2
GND1
Desaturation protection
Signal ground output side
Not connected
Positive power supply output side
Driver output
VEE2
DESAT
GND2
NC
GND1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC1
/RST
/FLT
RDY
IN-
Miller clamping
VCC2
OUT
Negative power supply output side
Signal ground input side
Non inverted driver input
Inverted driver input
Ready output
Fault output
Reset input
Positive power supply input side
Signal ground input side
CLAMP
VEE2
IN+
10 IN+
11 IN-
GND1
12 RDY
13 FLT
14 RST
15 VCC1
16 GND1
Figure 4: PG-DSO-16-15
3.2
Pin Functionality
/FLT (Fault output)
Open-drain with internal pull up resistor output to report a
desaturation error of the IGBT (/FLT is low if desaturation
occurs)
GND1
Ground connection of the input side.
IN+ Non-inverting driver input
RDY (Ready status)
IN+ control signal for the driver output if IN- is set to low.
(The IGBT is on if IN+ = high and IN- = low)
A minimum pulse width is defined to make the IC robust
against glitches at IN+. An internal Pull-Down-Resistor
ensures IGBT Off-State.
Open-drain with internal pull up resistor output to report the
correct operation of the device. (RDY = high if both chips are
above the UVLO level and the internal chip transmission is
faultless)
IN- Inverting driver input
VCC1
IN- control signal for driver output if IN+ is set to high.
(IGBT is on if IN- = low and IN+ = high)
5V power supply of the input chip
A minimum pulse width is defined to make the IC robust
against glitches at IN-. An internal Pull-Up-Resistor ensures
IGBT Off-State.
VEE2
Negative power supply pins of the output chip. If no negative
supply voltage is available, both pins have to be connected to
GND2.
/RST (Reset) input
Function 1: Enable/shutdown of the input chip. (The IGBT is
off if /RST = low). A minimum pulse width is defined to
make the IC robust against glitches at IN-.
DESAT (Desaturation)
Monitoring of the IGBT saturation voltage (VCE) to detect
desaturation caused by short circuits. If OUT is high, VCE is
above a defined value and a certain blanking time has
expired, the desaturation protection is activated and the
IGBT is switched off. The blanking time is adjustable by an
Function 2: Resets the DESAT-FAULT-state of the chip if
/RST is low for a time TRST. An internal Pull-Up-Resistor is
used to ensure FLT status output.
Datasheet
8
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
external capacitor.
CLAMP (Clamping)
Ties the gate voltage to ground after the IGBT has been
switched off at a defined voltage to avoid a parasitic switch-
on of the IGBT.During turn-off, the gate voltage is
monitored and the clamp output is activated when the gate
voltage goes below 2V (related to VEE2).
GND2
Reference ground of the output chip.
OUT (Driver output)
Output pin to drive an IGBT. The voltage is switched
between VEE2 and VCC2. In normal operating mode Vout
is controlled by IN+, IN- and /RST. During error mode
(UVLO, internal error or DESAT) Vout is set to VEE2
independent of the input control signals.
VCC2
Positive power supply pin of the output side.
Datasheet
9
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4
Electrical Parameters
4.1
Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated
circuit. Unless otherwise noted all parameters refer to GND1.
Parameter
Symbol
Limit Values
Unit Remarks
min.
-0.3
-12
max.
20
0.3
28
1)
Positive power supply output side
VVCC2
VVEE2
Vmax2
V
V
V
1)
Negative power supply output side
Maximum power supply voltage output side
(VVCC2-VVEE2
)
Gate driver output
VOUT
IOUT
IOUT
tCLP
VVEE2-0.3 Vmax2+0.3
V
A
A
Gate driver high output maximum current
Gate driver low output maximum current
Maximum short circuit clamping time
—
—
2.4
2.4
10
t = 2µs
t = 2µs
us ICLAMP/OUT
=
500mA
Positive power supply input side
Logic input voltages
(IN+,IN-,RST)
VVCC1
VLogicIN
-0.3
-0.3
6.5
6.5
V
V
Opendrain Logic output voltage
(FLT)
Opendrain Logic output voltage
(RDY)
Opendrain Logic output current
(FAULT)
VFLT
VRDY
IFLT
-0.3
-0.3
6.5
6.5
V
V
10
mA
Opendrain Logic output current
(RDY)
IRDY
10
mA
1)
Pin DESAT voltage
Pin CLAMP voltage
VDESAT
VCLAMP
-0.3
VVCC2 +0.3
V
V
V
= -8V
VEE2
VVEE2-0.3 VVCC2+0.3
2)
Junction temperature
Storage temperature
Power dissipation, Input chip
TJ
TS
PD, IN
-40
-55
150
150
100
°C
°C
mW 3)@TA = 25°
mW 3)@TA = 25°
K/W @TA = 25°C
K/W @TA = 25°C
Power dissipation, Output chip
Thermal resistance (Input chip active)
Thermal resistance (Output chip active)
ESD Capability
PD, OUT
RTHJA,IN
RTHJA,OUT
VESD
700
160
125
1
kV Human Body
Model4)
1) With respect to GND2.
2) may be exceeded during short circuit clamping
3) Output IC power dissipation is derated linearly at 10 mW/°C above 62°C. Input IC power dissipation does not require derating. See
section 8.1 for reference layouts for these thermal data. Thermal performance may change significantly with layout and heat dissipation
of components in close proximity.
4) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor).
Datasheet
10
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4.2
Operating Parameters
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all
parameters refer to GND1.
Parameter
Symbol
Limit Values
Unit
Remarks
min.
13
-12
max.
20
0
1)
1)
Positive power supply output side
VVCC2
VVEE2
Vmax2
V
V
V
Negative power supply output side
Maximum power supply voltage output side
28
(VVCC2-VVEE2
)
Positive power supply input side
Logic input voltages
(IN+,IN-,RST)
Pin CLAMP voltage
Pin DESAT voltage
VVCC1
VLogicIN
4.5
-0.3
5.5
5.5
V
V
2)
VCLAMP
VDESAT
TA
VVEE2-0.3
-0.3
VVCC2
VVCC2
105
V
V
°C
1)
Ambient temperature
-40
—
Common mode transient immunity3)
|∆VISO/dt|
50
kV/µs @ 500V
1) With respect to GND2.
2) may be exceeded during short circuit clamping
3) The parameter is not subject to production test - verified by design/characterization
4.3
Recommended Operating Parameters
Note: Unless otherwise noted all parameters refer to GND1.
Parameter
Symbol
Values
Unit Remarks
1)
Positive power supply output side
Negative power supply output side
Positive power supply input side
VVCC2
VVEE2
VVCC1
15
-8
5
V
V
V
1)
1) With respect to GND2.
Datasheet
11
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4.4
Electrical Characteristics
Note: The electrical characteristics involve the spread of values for the supply voltages, load and junction temperatures given
below. Typical values represent the median values, which are related to production processes at T = 25°C. Unless
otherwise noted all voltages are given with respect to GND.
4.4.1
Voltage Supply.
Parameter
Symbol
Limit Values
typ. max.
4.1
Unit Test Conditions
min.
UVLO Threshold Input Chip
VUVLOH1
VUVLOL1
VHYS1
—
3.5
0.15
4.3
—
—
V
V
V
3.8
—
UVLO Hysteresis Input Chip
(VUVLOH1 - VUVLOL1
)
UVLO Threshold Output Chip
VUVLOH2
VUVLOL2
VHYS2
—
10.4
0.7
12.0
11.0
0.9
12.6
—
—
V
V
V
UVLO Hysteresis Output Chip
(VUVLOH1 - VUVLOL1
)
Quiescent Current Input Chip
IQ1
—
7
9
6
mA VVCC1 =5V
IN+ = High, IN- = Low
=>OUT = High, RDY =
High, /FLT = High
Quiescent Current Output Chip
IQ2
—
4
mA VVCC2 =15V
VVEE2 =-8V
IN+ = High, IN- = Low
=>OUT = High, RDY =
High, /FLT = High
4.4.2
Logic Input and Output
Parameter
Symbol
Limit Values
Unit Test Conditions
min.
typ.
max.
IN+,IN-, RST Low Input Voltage
IN+,IN-, RST High Input Voltage
IN-, RST Input Current
VIN+L,VIN-
L,VRSTL
VIN+H,VIN-
HVRSTH
—
3.5
—
—
1.5
V
V
—
—
IIN-, RST
I
100
400
uA VIN-=GND1
VRST =GND1
IN+ Input Current
RDY,FLT Pull Up Current
IIN+,
IPRDY,
IPFLT
—
—
100
100
400
400
uA VIN+=VCC1
uA VRDY=GND1
VFLT=GND1
Input Pulse Suppression IN+, IN-
TMININ+
TMININ-
TMINRST
TRST
,
30
30
40
40
—
—
—
—
ns
ns
ns
Input Pulse Suppression RST
for ENABLE/SHUTDOWN
Pulse Width RST
for Reseting FLT
800
FLT Low Voltage
RDY Low Voltage
VFLTL
VRDYL
—
—
—
—
300
300
mV ISINK(FLT) = 5mA
mV ISINK(RDY) = 5mA
Datasheet
12
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4.4.3
Gate Driver
Parameter
Symbol
Limit Values
typ. max.
Unit Test Conditions
min.
High Level Output Voltage
VOUTH1
VOUTH2
VOUTH3
VOUTH4
IOUTH
VVCC2-1.2 VVCC2-0.8
VVCC2-2.5 VVCC2-2
V
V
V
V
A
IOUTH = -20mA
IOUTH = -200mA
IOUTH = -1A
IOUTH = -2A
IN+ = High, IN- = Low;
OUT = High
VVCC2-9
VVCC2-5
VVCC2-10
-2
High Level Output Peak Current
Low Level Output Voltage
-1.5
VOUTL1
VVEE2+0.04 VVEE2 +0.09
V
IOUTL = 20mA
VOUTL2
VOUTL3
VOUTL4
IOUTL
VVEE2+0.5 VVEE2 +0.85
VVEE2+2.5 VVEE2 +5.0
V
V
V
A
IOUTL = 200mA
IOUTL = 1A
IOUTL = 2A
IN+ = Low, IN- = Low;
OUT = Low
VVEE2+7
2
—
—
Low Level Output Peak Current
1.5
4.4.4
Active Miller Clamp
Parameter
Symbol
Limit Values
Unit Test Conditions
min.
—
typ.
max.
Low Level Clamp Voltage
VCLAMPL1
VCLAMPL2
VCLAMPL3
ICLAMPL
VVEE2+0.03 VVEE2 +0.08
VVEE2+0.3 VVEE2 +0.8
VVEE2+1.9 VVEE2 +4.8
V
V
V
A
V
IOUTL = 20mA
IOUTL = 200mA
—
—
2
1.6
IOUTL = 1A
1)
Low Level Clamp Current
Clamp Threshold Voltage
VCLAMP
2.1
2.4
Related to VEE2
1) The parameter is not subject to production test - verified by design/characterization
Datasheet
13
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4.4.5
Short Circuit Clamping
Parameter
Symbol
Limit Values
Unit Test Conditions
min.
typ.
max.
Clamping voltage (OUT)
(VOUT-VVCC2
VCLPout
0.8
1.3
V
V
V
IN+=High, IN-=Low,
)
OUT=High
IOUT = 500mA (pulse
test,tCLPmax=10us)
IN+=High, IN-=Low,
OUT=High
ICLAMP = 500mA (pulse
test,tCLPmax=10us)
IN+=High, IN-=Low,
OUT=High
ICLAMP = 20mA
Clamping voltage (CLAMP)
(VVCLAMP-VVCC2
VCLPclamp
1.3
0.7
)
Clamping voltage (CLAMP)
VCLPclamp
1.1
4.4.6
Dynamic Characteristics
Parameter
Symbol
Limit Values
Unit Test Conditions
min.
165
150
—
typ.
185
170
20
max.
7501)
190
Input to output propagation delay ON
Input to output propagation delay OFF
Input to output propagation delay
distortion
TPDON
TPDOFF
TPDISTO
ns VVCC1 = 5V,
VVCC2 =15V,VVEE2 =-8V
ns
ns
CLOAD= 100pF
VIN+=50%, VOUT=50%
@ 25°C
555 1)
Input to output propagation delay ON
variation due to temp 2)
TPDONt
TPDOFFt
TPDISTOt
TRISE
—
—
—
—
—
—
—
60
20
35
20
—
ns
V
VCC2 =15V,VVEE2 =-8V
ns CLOAD= 100pF
VIN+=50%, VOUT=50%
Input to output propagation delay OFF
variation due to temp 2)
Input to output propagation delay
distortion variation due to temp 2)
Rise Time
ns
ns VVCC2 =15V,VVEE2 =-8V
CLOAD= 1nF
VL 10% ,VH 90%
—
—
—
400
60
—
—
—
ns
VVCC2 =15V,VVEE2 =-8V
CLOAD= 34nF
VL 10% ,VH 90%
Fall Time
TFALL
ns VVCC2 =15V,VVEE2 =-8V
CLOAD= 1nF
VL 10% ,VH 90%
600
ns
VVCC2 =15V,VVEE2 =-8V
CLOAD= 34nF
VL 10% ,VH 90%
1) The maximum value of input to output propagation delay ON occures only in case of electromagnetic interferences, typically the input
to output delay is 205ns at TA =25°C, one worst case watchdog clock cycle shorter (see chapter 2.2.3). The turn OFF-signal is
prioritized/dominant and will not show up this behavior.
2) The parameter is not subject to production test - verified by design/characterization
Datasheet
14
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4.4.7
Desaturation protection
Parameter
Symbol
Limit Values
min. typ.
215
Unit Test Conditions
max.
295
Blanking Capacitor Charge Current
Blanking Capacitor Discharge Current
IDESATC
IDESATD
250
2
uA VVCC2 =15V,VVEE2 =-8V
VDESAT=2V
1
—
mA VVCC2 =15V,VVEE2 =-8V
VDESAT=6V
Desaturation Reference Level
Desaturation Reference Level
Desaturation Sense to OUT Low Delay TDESATOUT
VDESAT
VDESAT
8.3
7.6
—
9
8.6
100
9.5
9.5
150
V
V
VVCC2 =15V,VVEE2 =-8V
VVCC2 =15V,VVEE2 =0V
ns VOUT =90%
CLOAD= 1nF
Desaturation Sense to FLT Low Delay
Desaturation Low Voltage
TDESATFLT
VDESATL
—
0.4
—
0.6
2.25
0.95
us VFLT =10%; IFLT =5mA
V
IN+=Low, IN-=Low,
OUT=Low
4.4.8
Active Shut Down
Parameter
Symbol
Limit Values
Unit Test Conditions
min.
typ.
max.
1)
Active Shut Down Voltage
VACTSD
4
V
IOUT=-200mA,
VCC2 open
1) With reference to VEE2
Datasheet
15
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Insulation Characteristics
5
Insulation Characteristics
5.1
DIN EN 60747-5-2 (VDE 0884 Teil 2): 2003-01. Basic Insulation
Description
Symbol
Characteristic
Unit
Installation classification per EN 60664-1, Table 1
for rated mains voltage ≤ 150 VRMS
I-IV
I-III
I-II
for rated mains voltage ≤ 300 VRMS
for rated mains voltage ≤ 600 VRMS
Climatic Classification
55/105/21
Pollution Degree (EN 60664-1)
Minimum External Clearance
Minimum External Creepage
Minimum Comparative Tracking Index
Maximum Repetitive Insulation Voltage
2
CLR
CPG
CTI
VIORM
VPR
8.12
8.24
175
1420
2663
mm
mm
VPEAK
VPEAK
Input to Output Test Voltage, Method b1)
VIORM * 1.875 = VPR, 100% Production Test with tm = 1 sec,
Partial Discharge < 5pC
Input to Output Test Voltage, Method a1)
VIORM * 1.6 = VPR, Type and sample Test, tm = 60 sec,
Partial Discharge < 5pC
VPR
2272
VPEAK
Highest Allowable Overvoltage1)
Maximum Surge Insulation Voltage
Insulation Resistance at Ts, VIO = 500 V
VIOTM
VIOSM
RIO
6000
6000
>109
VPEAK
V
Ω
1) Refer to VDE 0884 for a detailed description of Method a and Method b partial discharge test profiles.
*Note 1:Insulation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in
application. Surface mount classification is class A in accordance with CECCOO802.
*Note 2: This coupler is suitable for “basic insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured
by means of suitable protective circuits.
5.2
UL 1577
Description
Insulation Withstand Voltage / 1min
Insulation Test Voltage / 1sec
Symbol
VISO
VISO
Characteristic
3750
Unit
Vrms
Vrms
4500
5.3
Reliability
For Qualification Report please contact your local Infineon Technologies office.
Datasheet
16
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Timing Diagrams
6
Timing Diagrams
IN
OUT
TPDELAY
TPDELAY
Figure 5: Propagation Delay
IN+
IN-
RST
OUT
Figure 6: Turn-on and Turn-off
IN+
IN-
OUT
9V
DESAT
RDY
FLT
Tdesatflt
1.0...1.8us
RST
Figure 7: Desaturation Fault
Datasheet
17
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Timing Diagrams
IN+
IN-
Vcc1
Vcc2
OUT
RDY
FLT
RST
Figure 8: UVLO
Datasheet
18
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Package Outlines
7
Package Outlines
PG-DSO-16-15
(Plastic Dual Small
1)Does not include plastic or metal protusions of 0.15 max per side
Figure 9: PG-DSO-16-15
Datasheet
19
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Application Notes
8
Application Notes
8.1
Reference Layout for Thermal Data
The PCB layout shown in figure 12 represents the reference layout used for the thermal characterisation. Pins 9 and 16
(GND1) and pins 1 and 8 (VEE2) require ground plane connections for achiving maximum power dissipation. The
1ED020I12-F is conceived to dissipate most of the heat generated through this pins.
Output Side
Input Side
PCB + Top-Layer
PCB + Bottom-Layer
Total Area = 374.4 mm2
Figure 10: Reference layout for thermal data (Copper thickness 105µm)
8.2
Printed Circuit Board Guidelines
Following factors should be taken into account for an optimum PCB layout.
- Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.
- The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained to increase the
effective isolation and reduce parasitic coupling.
- In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept as short as
possible.
Datasheet
20
Version 2.2, 2009-12-03
EICEDRIVERTM
1ED020I12-F
Application Notes
Datasheet
21
Version 2.2, 2009-12-03
Total Quality Management
Qualität hat für uns eine umfassende So we are not only concerned with product
Bedeutung. Wir wollen allen Ihren quality. We direct our efforts equally at
Ansprüchen in der bestmöglichen Weise quality of supply and logistics, service and
gerecht werden. Es geht uns also nicht nur support, as well as all the other ways in
um die Produktqualität
–
unsere which we advise and attend to you.
Anstrengungen gelten gleichermaßen der
Lieferqualität und Logistik, dem Service
und Support sowie allen sonstigen
Beratungs- und Betreuungsleistungen.
Part of this is the very special attitude of our
staff. Total Quality in thought and deed,
towards co-workers, suppliers and you, our
customer. Our guideline is “do everything
with zero defects”, in an open manner that
is demonstrated beyond your immediate
workplace, and to constantly improve.
Throughout the corporation we also think
in terms of Time Optimized Processes
(top), greater speed on our part to give you
that decisive competitive edge.
Dazu gehört eine bestimmte Geisteshaltung
unserer Mitarbeiter. Total Quality im
Denken und Handeln gegenüber Kollegen,
Lieferanten und Ihnen, unserem Kunden.
Unsere Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener Sichtweise
auch über den eigenen Arbeitsplatz hinaus
– und uns ständig zu verbessern.
Give us the chance to prove the best of
performance through the best of quality –
you will be convinced.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit
den
entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe Leistung
durch umfassende Qualität zu beweisen.
Wir werden Sie überzeugen.
Quality takes on an allencompassing
significance at Semiconductor Group. For
us it means living up to each and every one
of your demands in the best possible way.
w w w . i n f i n e o n . c o m / g a t e d r i v e r
Published by Infineon Technologies AG
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