1ED020I12-S

更新时间:2024-12-04 13:02:35
品牌:INFINEON
描述:Half Bridge Based MOSFET Driver, 2A, PDSO16, GREEN, PLASTIC, SOP-16

1ED020I12-S 概述

Half Bridge Based MOSFET Driver, 2A, PDSO16, GREEN, PLASTIC, SOP-16 电源配件 MOSFET 驱动器

1ED020I12-S 规格参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP16,.4针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.65
Is Samacsys:N高边驱动器:NO
接口集成电路类型:HALF BRIDGE BASED IGBT DRIVERJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:10.34 mm
功能数量:1端子数量:16
最高工作温度:105 °C最低工作温度:-40 °C
标称输出峰值电流:2 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:-8,5,15 V认证状态:Not Qualified
座面最大高度:2.64 mm子类别:Peripheral Drivers
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:7.52 mm
Base Number Matches:1

1ED020I12-S 数据手册

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Datasheet, Version 2.2, December 2009  
EICEDRIVERTM  
1ED020I12-F  
Single IGBT Driver IC  
Power Management & Drives  
N e v e r s t o p t h i n k i n g .  
5
Power Management & Drives  
Revision History:  
Previous Version:  
December 2009  
2.1  
Version 2.2  
Page  
6
Subjects (major changes since last revision)  
2.2.3 Watchdog Timer  
14  
4.4.6 Dynamic Characteristics  
Edition 2009-12-03  
Published by Infineon Technologies AG,  
Campeon 1-12,  
85579 Neubiberg, Germany  
© Infineon Technologies AG 2010.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,  
descriptions and charts stated herein.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon  
Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in question please  
contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of  
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support  
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended  
to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
EICEDRIVERTM  
1ED020I12-F  
Single IGBT Driver IC  
Product Highlights  
Coreless transformer isolated driver  
Galvanic Insulation  
Integrated protection features  
Suitable for operation at high ambient temperature  
Cost effective technology  
Approvals: DIN EN 60747-5-2, UL1577  
Features  
Typical  
Application  
Single channel isolated IGBT Driver  
For 600V/1200V IGBTs  
2A rail-to-rail output  
Vcesat-detection  
AC-Drives  
UPS-Systems  
Welding  
Active Miller Clamp  
VCC1  
VCC2,H  
DESAT  
IN+, IN-, /RST  
OUT  
EiceDRIVERTM  
1ED020I12-F  
/FLT, RDY  
CLAMP  
VEE2,H GND2,H  
CPU  
VCC2,L  
DESAT  
IN+, IN-, /RST  
/FLT, RDY  
OUT  
EiceDRIVERTM  
1ED020I12-F  
CLAMP  
GND1  
VEE2,L GND2,L  
Figure 1: Typical Application  
Type  
Gate drive current  
Package  
1ED020I12-F  
+/- 2A  
PG-DSO-16-15  
Datasheet  
3
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Table of Contents  
Page  
1
Blockdiagram and Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Internal Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Undervoltage Lockout (UVLO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
READY status output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Watchdog Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Active Shut-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Non-Inverting and Inverting Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Driver Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
External Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Desaturation Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Active Miller Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
RESET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
2.1  
2.2  
2.2.1  
2.2.2  
2.2.3  
2.2.4  
2.3  
2.4  
2.5  
2.5.1  
2.5.2  
2.5.3  
2.6  
3
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
3.1  
3.2  
4
Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Operating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Recommended Operating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Voltage Supply. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Logic Input and Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Active Miller Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Short Circuit Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Desaturation protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Active Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
4.1  
4.2  
4.3  
4.4  
4.4.1  
4.4.2  
4.4.3  
4.4.4  
4.4.5  
4.4.6  
4.4.7  
4.4.8  
5
Insulation Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
DIN EN 60747-5-2 (VDE 0884 Teil 2): 2003-01. Basic Insulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
UL 1577 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
5.1  
5.2  
5.3  
6
7
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
8
Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Reference Layout for Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Printed Circuit Board Guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
8.1  
8.2  
Datasheet  
4
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
1
Blockdiagram and Application  
K4  
2V  
9
8
7
6
5
4
3
2
1
GND1  
IN+  
VEE2  
CLA M P  
0
0
&
t  
t  
0
CLAMP  
10  
11  
12  
13  
14  
15  
16  
VCC2  
VEE2  
/RST  
RX  
LOGIC  
TX  
RX  
VEE2  
LOGIC  
OUT  
IN-  
/FLT  
VCC2  
NC  
RDY  
/FLT  
UVLO  
TX  
UVLO  
GND2  
DESAT  
VEE2  
/RST  
DESAT  
LOGIC  
LOGIC  
I3  
K3  
VCC1  
GND1  
9V  
I4  
GND2  
Figure 2: Blockdiagram 1ED020I12-F  
Figure 3: Application example  
Datasheet  
5
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
2
Functional Description  
2.1  
Introduction  
2.2.2  
READY status output  
The READY output shows the status of three internal  
The 1ED020I12-F is an advanced IGBT gate driver that can  
be also used for driving power MOS devices. Control and  
protection functions are included to make possible the design  
of high reliability systems.  
The device consists of two galvanic separated parts. The  
input chip can be directly connected to a standard 5V DSP or  
microcontroller with CMOS in/output and the output chip is  
connected to the high voltage side.  
protection features.  
UVLO of the input chip  
UVLO of the output chip after a short delay  
Internal signal transmission  
It is not necessary to reset the READY signal since its state  
only depends on the status of the former protection signals.  
An effective active Miller clamp function avoids the need of  
negative gate driving in most applications and allows the use  
of a simple bootstrap supply for the high side driver.  
A rail-to-rail driver output enables the user to provide easy  
clamping of the IGBTs gate voltage during short circuit of  
the IGBT. So an increase of short circuit current due to the  
feedback via the Miller capacitance can be avoided. Further,  
a rail-to-rail output reduces power dissipation.  
2.2.3  
Watchdog Timer  
The 1ED020I12-F incorporates two level of signal  
transmission security implemented through two independent  
watchdog timers. First level ensures the short term signal  
integrity by resending the (turn on/off) signals with a  
watchdog period of typical 500ns. The second level monitors  
during normal operation the internal signal transmission. If  
the transmission fails for a given time, the IGBT is switched  
off and the READY output reports an internal error.  
The device also includes an IGBT desaturation protection  
with a FAULT status output.  
A READY status output reports if the device is supplied and  
operates correctly.  
2.2.4  
Active Shut-Down  
The Active Shut-Down feature ensures a safe IGBT off-state  
if the output chip is not connected to the power supply.  
2.2  
Internal Protection Features  
2.3  
Non-Inverting and Inverting Inputs  
2.2.1  
Undervoltage Lockout (UVLO)  
There are two possible input modes to control the IGBT. At  
non-inverting mode IN+ controls the driver output while IN-  
is set to low. At inverting mode IN- controls the driver output  
while IN+ is set to high. A minimum input pulse width is  
defined to filter occasional glitches.  
To ensure correct switching of IGBTs the device is equipped  
with an undervoltage lockout for both chips.  
If the power supply voltage VVCC1 of the input chip drops  
below VUVLOL1 a turn-off signal is sent to the output chip  
before power-down. The IGBT is switched off and the  
signals at IN+ and IN- are ignored as long as VVCC1 reaches  
the power-up voltage VUVLOH1  
.
2.4  
Driver Output  
If the power supply voltage VVCC2 of the output chip goes  
down below VUVLOL2 the IGBT is switched off and signals  
from the input chip are ignored as long as VVCC2 reaches the  
The output driver section uses only MOSFETs to provide a  
rail-to-rail output. This feature permits that tight control of  
gate voltage during on-state and short circuit can be  
maintained as long as the drivers supply is stable. Due to the  
low internal voltage drop, switching behaviour of the IGBT  
is predominantly governed by the gate resistor. Furthermore,  
it reduces the power to be dissipated by the driver.  
power-up voltage VUVLOH2  
.
Datasheet  
6
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
2.5  
External Protection Features  
Desaturation Protection  
2.5.1  
A desaturation protection ensures the protection of the IGBT  
at short circuit. When the DESAT voltage goes up and  
reaches 9V, the output is driven low. Further, the /FAULT  
output is activated. A programmable blanking time is used to  
allow enough time for IGBT saturation. Blanking time is  
provided by a highly precise internal current source and an  
external capacitor.  
2.5.2  
Active Miller Clamping  
A Miller clamp allows sinking the Miller current during a  
high dV/dt situation. Therefore, the use of a negative supply  
voltage can be avoided in many applications. During turn-  
off, the gate voltage is monitored and the clamp output is  
activated when the gate voltage goes below 2V (related to  
VEE2).  
2.5.3  
Short Circuit Clamping  
During short circuit the IGBTs gate voltage tends to rise  
because of the feedback via the Miller capacitance. An  
additional protection circuit connected to OUT and CLAMP  
limits this voltage to a value slightly higher than the supply  
voltage. A current of maximum 500 mA for 10us may be fed  
back to the supply through one of this paths. If higher  
currents are expected or a tighter clamping is desired external  
Schottky diodes may be added.  
2.6  
RESET  
The reset input has two functions.  
Firstly, /RST is in charge of setting back the FAULT output.  
If /RST is low longer than a given time , /FLT will be reseted  
at the rising edge of /RST; otherwise, it will remain  
unchanged. Moreover, it works as enable/shutdown of the  
input logic.  
Datasheet  
7
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
3
Pin Configuration and Functionality  
3.1  
Pin Configuration  
Pin Symbol  
Function  
1
2
3
4
5
6
7
8
9
VEE2  
Negative power supply output side  
DESAT  
GND2  
NC  
VCC2  
OUT  
CLAMP  
VEE2  
GND1  
Desaturation protection  
Signal ground output side  
Not connected  
Positive power supply output side  
Driver output  
VEE2  
DESAT  
GND2  
NC  
GND1  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
VCC1  
/RST  
/FLT  
RDY  
IN-  
Miller clamping  
VCC2  
OUT  
Negative power supply output side  
Signal ground input side  
Non inverted driver input  
Inverted driver input  
Ready output  
Fault output  
Reset input  
Positive power supply input side  
Signal ground input side  
CLAMP  
VEE2  
IN+  
10 IN+  
11 IN-  
GND1  
12 RDY  
13 FLT  
14 RST  
15 VCC1  
16 GND1  
Figure 4: PG-DSO-16-15  
3.2  
Pin Functionality  
/FLT (Fault output)  
Open-drain with internal pull up resistor output to report a  
desaturation error of the IGBT (/FLT is low if desaturation  
occurs)  
GND1  
Ground connection of the input side.  
IN+ Non-inverting driver input  
RDY (Ready status)  
IN+ control signal for the driver output if IN- is set to low.  
(The IGBT is on if IN+ = high and IN- = low)  
A minimum pulse width is defined to make the IC robust  
against glitches at IN+. An internal Pull-Down-Resistor  
ensures IGBT Off-State.  
Open-drain with internal pull up resistor output to report the  
correct operation of the device. (RDY = high if both chips are  
above the UVLO level and the internal chip transmission is  
faultless)  
IN- Inverting driver input  
VCC1  
IN- control signal for driver output if IN+ is set to high.  
(IGBT is on if IN- = low and IN+ = high)  
5V power supply of the input chip  
A minimum pulse width is defined to make the IC robust  
against glitches at IN-. An internal Pull-Up-Resistor ensures  
IGBT Off-State.  
VEE2  
Negative power supply pins of the output chip. If no negative  
supply voltage is available, both pins have to be connected to  
GND2.  
/RST (Reset) input  
Function 1: Enable/shutdown of the input chip. (The IGBT is  
off if /RST = low). A minimum pulse width is defined to  
make the IC robust against glitches at IN-.  
DESAT (Desaturation)  
Monitoring of the IGBT saturation voltage (VCE) to detect  
desaturation caused by short circuits. If OUT is high, VCE is  
above a defined value and a certain blanking time has  
expired, the desaturation protection is activated and the  
IGBT is switched off. The blanking time is adjustable by an  
Function 2: Resets the DESAT-FAULT-state of the chip if  
/RST is low for a time TRST. An internal Pull-Up-Resistor is  
used to ensure FLT status output.  
Datasheet  
8
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
external capacitor.  
CLAMP (Clamping)  
Ties the gate voltage to ground after the IGBT has been  
switched off at a defined voltage to avoid a parasitic switch-  
on of the IGBT.During turn-off, the gate voltage is  
monitored and the clamp output is activated when the gate  
voltage goes below 2V (related to VEE2).  
GND2  
Reference ground of the output chip.  
OUT (Driver output)  
Output pin to drive an IGBT. The voltage is switched  
between VEE2 and VCC2. In normal operating mode Vout  
is controlled by IN+, IN- and /RST. During error mode  
(UVLO, internal error or DESAT) Vout is set to VEE2  
independent of the input control signals.  
VCC2  
Positive power supply pin of the output side.  
Datasheet  
9
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Electrical Parameters  
4
Electrical Parameters  
4.1  
Absolute Maximum Ratings  
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated  
circuit. Unless otherwise noted all parameters refer to GND1.  
Parameter  
Symbol  
Limit Values  
Unit Remarks  
min.  
-0.3  
-12  
max.  
20  
0.3  
28  
1)  
Positive power supply output side  
VVCC2  
VVEE2  
Vmax2  
V
V
V
1)  
Negative power supply output side  
Maximum power supply voltage output side  
(VVCC2-VVEE2  
)
Gate driver output  
VOUT  
IOUT  
IOUT  
tCLP  
VVEE2-0.3 Vmax2+0.3  
V
A
A
Gate driver high output maximum current  
Gate driver low output maximum current  
Maximum short circuit clamping time  
2.4  
2.4  
10  
t = 2µs  
t = 2µs  
us ICLAMP/OUT  
=
500mA  
Positive power supply input side  
Logic input voltages  
(IN+,IN-,RST)  
VVCC1  
VLogicIN  
-0.3  
-0.3  
6.5  
6.5  
V
V
Opendrain Logic output voltage  
(FLT)  
Opendrain Logic output voltage  
(RDY)  
Opendrain Logic output current  
(FAULT)  
VFLT  
VRDY  
IFLT  
-0.3  
-0.3  
6.5  
6.5  
V
V
10  
mA  
Opendrain Logic output current  
(RDY)  
IRDY  
10  
mA  
1)  
Pin DESAT voltage  
Pin CLAMP voltage  
VDESAT  
VCLAMP  
-0.3  
VVCC2 +0.3  
V
V
V
= -8V  
VEE2  
VVEE2-0.3 VVCC2+0.3  
2)  
Junction temperature  
Storage temperature  
Power dissipation, Input chip  
TJ  
TS  
PD, IN  
-40  
-55  
150  
150  
100  
°C  
°C  
mW 3)@TA = 25°  
mW 3)@TA = 25°  
K/W @TA = 25°C  
K/W @TA = 25°C  
Power dissipation, Output chip  
Thermal resistance (Input chip active)  
Thermal resistance (Output chip active)  
ESD Capability  
PD, OUT  
RTHJA,IN  
RTHJA,OUT  
VESD  
700  
160  
125  
1
kV Human Body  
Model4)  
1) With respect to GND2.  
2) may be exceeded during short circuit clamping  
3) Output IC power dissipation is derated linearly at 10 mW/°C above 62°C. Input IC power dissipation does not require derating. See  
section 8.1 for reference layouts for these thermal data. Thermal performance may change significantly with layout and heat dissipation  
of components in close proximity.  
4) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kseries resistor).  
Datasheet  
10  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Electrical Parameters  
4.2  
Operating Parameters  
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all  
parameters refer to GND1.  
Parameter  
Symbol  
Limit Values  
Unit  
Remarks  
min.  
13  
-12  
max.  
20  
0
1)  
1)  
Positive power supply output side  
VVCC2  
VVEE2  
Vmax2  
V
V
V
Negative power supply output side  
Maximum power supply voltage output side  
28  
(VVCC2-VVEE2  
)
Positive power supply input side  
Logic input voltages  
(IN+,IN-,RST)  
Pin CLAMP voltage  
Pin DESAT voltage  
VVCC1  
VLogicIN  
4.5  
-0.3  
5.5  
5.5  
V
V
2)  
VCLAMP  
VDESAT  
TA  
VVEE2-0.3  
-0.3  
VVCC2  
VVCC2  
105  
V
V
°C  
1)  
Ambient temperature  
-40  
Common mode transient immunity3)  
|∆VISO/dt|  
50  
kV/µs @ 500V  
1) With respect to GND2.  
2) may be exceeded during short circuit clamping  
3) The parameter is not subject to production test - verified by design/characterization  
4.3  
Recommended Operating Parameters  
Note: Unless otherwise noted all parameters refer to GND1.  
Parameter  
Symbol  
Values  
Unit Remarks  
1)  
Positive power supply output side  
Negative power supply output side  
Positive power supply input side  
VVCC2  
VVEE2  
VVCC1  
15  
-8  
5
V
V
V
1)  
1) With respect to GND2.  
Datasheet  
11  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Electrical Parameters  
4.4  
Electrical Characteristics  
Note: The electrical characteristics involve the spread of values for the supply voltages, load and junction temperatures given  
below. Typical values represent the median values, which are related to production processes at T = 25°C. Unless  
otherwise noted all voltages are given with respect to GND.  
4.4.1  
Voltage Supply.  
Parameter  
Symbol  
Limit Values  
typ. max.  
4.1  
Unit Test Conditions  
min.  
UVLO Threshold Input Chip  
VUVLOH1  
VUVLOL1  
VHYS1  
3.5  
0.15  
4.3  
V
V
V
3.8  
UVLO Hysteresis Input Chip  
(VUVLOH1 - VUVLOL1  
)
UVLO Threshold Output Chip  
VUVLOH2  
VUVLOL2  
VHYS2  
10.4  
0.7  
12.0  
11.0  
0.9  
12.6  
V
V
V
UVLO Hysteresis Output Chip  
(VUVLOH1 - VUVLOL1  
)
Quiescent Current Input Chip  
IQ1  
7
9
6
mA VVCC1 =5V  
IN+ = High, IN- = Low  
=>OUT = High, RDY =  
High, /FLT = High  
Quiescent Current Output Chip  
IQ2  
4
mA VVCC2 =15V  
VVEE2 =-8V  
IN+ = High, IN- = Low  
=>OUT = High, RDY =  
High, /FLT = High  
4.4.2  
Logic Input and Output  
Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min.  
typ.  
max.  
IN+,IN-, RST Low Input Voltage  
IN+,IN-, RST High Input Voltage  
IN-, RST Input Current  
VIN+L,VIN-  
L,VRSTL  
VIN+H,VIN-  
HVRSTH  
3.5  
1.5  
V
V
IIN-, RST  
I
100  
400  
uA VIN-=GND1  
VRST =GND1  
IN+ Input Current  
RDY,FLT Pull Up Current  
IIN+,  
IPRDY,  
IPFLT  
100  
100  
400  
400  
uA VIN+=VCC1  
uA VRDY=GND1  
VFLT=GND1  
Input Pulse Suppression IN+, IN-  
TMININ+  
TMININ-  
TMINRST  
TRST  
,
30  
30  
40  
40  
ns  
ns  
ns  
Input Pulse Suppression RST  
for ENABLE/SHUTDOWN  
Pulse Width RST  
for Reseting FLT  
800  
FLT Low Voltage  
RDY Low Voltage  
VFLTL  
VRDYL  
300  
300  
mV ISINK(FLT) = 5mA  
mV ISINK(RDY) = 5mA  
Datasheet  
12  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Electrical Parameters  
4.4.3  
Gate Driver  
Parameter  
Symbol  
Limit Values  
typ. max.  
Unit Test Conditions  
min.  
High Level Output Voltage  
VOUTH1  
VOUTH2  
VOUTH3  
VOUTH4  
IOUTH  
VVCC2-1.2 VVCC2-0.8  
VVCC2-2.5 VVCC2-2  
V
V
V
V
A
IOUTH = -20mA  
IOUTH = -200mA  
IOUTH = -1A  
IOUTH = -2A  
IN+ = High, IN- = Low;  
OUT = High  
VVCC2-9  
VVCC2-5  
VVCC2-10  
-2  
High Level Output Peak Current  
Low Level Output Voltage  
-1.5  
VOUTL1  
VVEE2+0.04 VVEE2 +0.09  
V
IOUTL = 20mA  
VOUTL2  
VOUTL3  
VOUTL4  
IOUTL  
VVEE2+0.5 VVEE2 +0.85  
VVEE2+2.5 VVEE2 +5.0  
V
V
V
A
IOUTL = 200mA  
IOUTL = 1A  
IOUTL = 2A  
IN+ = Low, IN- = Low;  
OUT = Low  
VVEE2+7  
2
Low Level Output Peak Current  
1.5  
4.4.4  
Active Miller Clamp  
Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min.  
typ.  
max.  
Low Level Clamp Voltage  
VCLAMPL1  
VCLAMPL2  
VCLAMPL3  
ICLAMPL  
VVEE2+0.03 VVEE2 +0.08  
VVEE2+0.3 VVEE2 +0.8  
VVEE2+1.9 VVEE2 +4.8  
V
V
V
A
V
IOUTL = 20mA  
IOUTL = 200mA  
2
1.6  
IOUTL = 1A  
1)  
Low Level Clamp Current  
Clamp Threshold Voltage  
VCLAMP  
2.1  
2.4  
Related to VEE2  
1) The parameter is not subject to production test - verified by design/characterization  
Datasheet  
13  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Electrical Parameters  
4.4.5  
Short Circuit Clamping  
Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min.  
typ.  
max.  
Clamping voltage (OUT)  
(VOUT-VVCC2  
VCLPout  
0.8  
1.3  
V
V
V
IN+=High, IN-=Low,  
)
OUT=High  
IOUT = 500mA (pulse  
test,tCLPmax=10us)  
IN+=High, IN-=Low,  
OUT=High  
ICLAMP = 500mA (pulse  
test,tCLPmax=10us)  
IN+=High, IN-=Low,  
OUT=High  
ICLAMP = 20mA  
Clamping voltage (CLAMP)  
(VVCLAMP-VVCC2  
VCLPclamp  
1.3  
0.7  
)
Clamping voltage (CLAMP)  
VCLPclamp  
1.1  
4.4.6  
Dynamic Characteristics  
Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min.  
165  
150  
typ.  
185  
170  
20  
max.  
7501)  
190  
Input to output propagation delay ON  
Input to output propagation delay OFF  
Input to output propagation delay  
distortion  
TPDON  
TPDOFF  
TPDISTO  
ns VVCC1 = 5V,  
VVCC2 =15V,VVEE2 =-8V  
ns  
ns  
CLOAD= 100pF  
VIN+=50%, VOUT=50%  
@ 25°C  
555 1)  
Input to output propagation delay ON  
variation due to temp 2)  
TPDONt  
TPDOFFt  
TPDISTOt  
TRISE  
60  
20  
35  
20  
ns  
V
VCC2 =15V,VVEE2 =-8V  
ns CLOAD= 100pF  
VIN+=50%, VOUT=50%  
Input to output propagation delay OFF  
variation due to temp 2)  
Input to output propagation delay  
distortion variation due to temp 2)  
Rise Time  
ns  
ns VVCC2 =15V,VVEE2 =-8V  
CLOAD= 1nF  
VL 10% ,VH 90%  
400  
60  
ns  
VVCC2 =15V,VVEE2 =-8V  
CLOAD= 34nF  
VL 10% ,VH 90%  
Fall Time  
TFALL  
ns VVCC2 =15V,VVEE2 =-8V  
CLOAD= 1nF  
VL 10% ,VH 90%  
600  
ns  
VVCC2 =15V,VVEE2 =-8V  
CLOAD= 34nF  
VL 10% ,VH 90%  
1) The maximum value of input to output propagation delay ON occures only in case of electromagnetic interferences, typically the input  
to output delay is 205ns at TA =25°C, one worst case watchdog clock cycle shorter (see chapter 2.2.3). The turn OFF-signal is  
prioritized/dominant and will not show up this behavior.  
2) The parameter is not subject to production test - verified by design/characterization  
Datasheet  
14  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Electrical Parameters  
4.4.7  
Desaturation protection  
Parameter  
Symbol  
Limit Values  
min. typ.  
215  
Unit Test Conditions  
max.  
295  
Blanking Capacitor Charge Current  
Blanking Capacitor Discharge Current  
IDESATC  
IDESATD  
250  
2
uA VVCC2 =15V,VVEE2 =-8V  
VDESAT=2V  
1
mA VVCC2 =15V,VVEE2 =-8V  
VDESAT=6V  
Desaturation Reference Level  
Desaturation Reference Level  
Desaturation Sense to OUT Low Delay TDESATOUT  
VDESAT  
VDESAT  
8.3  
7.6  
9
8.6  
100  
9.5  
9.5  
150  
V
V
VVCC2 =15V,VVEE2 =-8V  
VVCC2 =15V,VVEE2 =0V  
ns VOUT =90%  
CLOAD= 1nF  
Desaturation Sense to FLT Low Delay  
Desaturation Low Voltage  
TDESATFLT  
VDESATL  
0.4  
0.6  
2.25  
0.95  
us VFLT =10%; IFLT =5mA  
V
IN+=Low, IN-=Low,  
OUT=Low  
4.4.8  
Active Shut Down  
Parameter  
Symbol  
Limit Values  
Unit Test Conditions  
min.  
typ.  
max.  
1)  
Active Shut Down Voltage  
VACTSD  
4
V
IOUT=-200mA,  
VCC2 open  
1) With reference to VEE2  
Datasheet  
15  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Insulation Characteristics  
5
Insulation Characteristics  
5.1  
DIN EN 60747-5-2 (VDE 0884 Teil 2): 2003-01. Basic Insulation  
Description  
Symbol  
Characteristic  
Unit  
Installation classification per EN 60664-1, Table 1  
for rated mains voltage 150 VRMS  
I-IV  
I-III  
I-II  
for rated mains voltage 300 VRMS  
for rated mains voltage 600 VRMS  
Climatic Classification  
55/105/21  
Pollution Degree (EN 60664-1)  
Minimum External Clearance  
Minimum External Creepage  
Minimum Comparative Tracking Index  
Maximum Repetitive Insulation Voltage  
2
CLR  
CPG  
CTI  
VIORM  
VPR  
8.12  
8.24  
175  
1420  
2663  
mm  
mm  
VPEAK  
VPEAK  
Input to Output Test Voltage, Method b1)  
VIORM * 1.875 = VPR, 100% Production Test with tm = 1 sec,  
Partial Discharge < 5pC  
Input to Output Test Voltage, Method a1)  
VIORM * 1.6 = VPR, Type and sample Test, tm = 60 sec,  
Partial Discharge < 5pC  
VPR  
2272  
VPEAK  
Highest Allowable Overvoltage1)  
Maximum Surge Insulation Voltage  
Insulation Resistance at Ts, VIO = 500 V  
VIOTM  
VIOSM  
RIO  
6000  
6000  
>109  
VPEAK  
V
1) Refer to VDE 0884 for a detailed description of Method a and Method b partial discharge test profiles.  
*Note 1:Insulation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in  
application. Surface mount classification is class A in accordance with CECCOO802.  
*Note 2: This coupler is suitable for “basic insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured  
by means of suitable protective circuits.  
5.2  
UL 1577  
Description  
Insulation Withstand Voltage / 1min  
Insulation Test Voltage / 1sec  
Symbol  
VISO  
VISO  
Characteristic  
3750  
Unit  
Vrms  
Vrms  
4500  
5.3  
Reliability  
For Qualification Report please contact your local Infineon Technologies office.  
Datasheet  
16  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Timing Diagrams  
6
Timing Diagrams  
IN  
OUT  
TPDELAY  
TPDELAY  
Figure 5: Propagation Delay  
IN+  
IN-  
RST  
OUT  
Figure 6: Turn-on and Turn-off  
IN+  
IN-  
OUT  
9V  
DESAT  
RDY  
FLT  
Tdesatflt  
1.0...1.8us  
RST  
Figure 7: Desaturation Fault  
Datasheet  
17  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Timing Diagrams  
IN+  
IN-  
Vcc1  
Vcc2  
OUT  
RDY  
FLT  
RST  
Figure 8: UVLO  
Datasheet  
18  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Package Outlines  
7
Package Outlines  
PG-DSO-16-15  
(Plastic Dual Small  
1)Does not include plastic or metal protusions of 0.15 max per side  
Figure 9: PG-DSO-16-15  
Datasheet  
19  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Application Notes  
8
Application Notes  
8.1  
Reference Layout for Thermal Data  
The PCB layout shown in figure 12 represents the reference layout used for the thermal characterisation. Pins 9 and 16  
(GND1) and pins 1 and 8 (VEE2) require ground plane connections for achiving maximum power dissipation. The  
1ED020I12-F is conceived to dissipate most of the heat generated through this pins.  
Output Side  
Input Side  
PCB + Top-Layer  
PCB + Bottom-Layer  
Total Area = 374.4 mm2  
Figure 10: Reference layout for thermal data (Copper thickness 105µm)  
8.2  
Printed Circuit Board Guidelines  
Following factors should be taken into account for an optimum PCB layout.  
- Sufficient spacing should be kept between high voltage isolated side and low voltage side circuits.  
- The same minimum distance between two adjacent high-side isolated parts of the PCB should be maintained to increase the  
effective isolation and reduce parasitic coupling.  
- In order to ensure low supply ripple and clean switching signals, bypass capacitor trace lengths should be kept as short as  
possible.  
Datasheet  
20  
Version 2.2, 2009-12-03  
EICEDRIVERTM  
1ED020I12-F  
Application Notes  
Datasheet  
21  
Version 2.2, 2009-12-03  
Total Quality Management  
Qualität hat für uns eine umfassende So we are not only concerned with product  
Bedeutung. Wir wollen allen Ihren quality. We direct our efforts equally at  
Ansprüchen in der bestmöglichen Weise quality of supply and logistics, service and  
gerecht werden. Es geht uns also nicht nur support, as well as all the other ways in  
um die Produktqualität  
unsere which we advise and attend to you.  
Anstrengungen gelten gleichermaßen der  
Lieferqualität und Logistik, dem Service  
und Support sowie allen sonstigen  
Beratungs- und Betreuungsleistungen.  
Part of this is the very special attitude of our  
staff. Total Quality in thought and deed,  
towards co-workers, suppliers and you, our  
customer. Our guideline is “do everything  
with zero defects”, in an open manner that  
is demonstrated beyond your immediate  
workplace, and to constantly improve.  
Throughout the corporation we also think  
in terms of Time Optimized Processes  
(top), greater speed on our part to give you  
that decisive competitive edge.  
Dazu gehört eine bestimmte Geisteshaltung  
unserer Mitarbeiter. Total Quality im  
Denken und Handeln gegenüber Kollegen,  
Lieferanten und Ihnen, unserem Kunden.  
Unsere Leitlinie ist jede Aufgabe mit „Null  
Fehlern“ zu lösen – in offener Sichtweise  
auch über den eigenen Arbeitsplatz hinaus  
– und uns ständig zu verbessern.  
Give us the chance to prove the best of  
performance through the best of quality –  
you will be convinced.  
Unternehmensweit orientieren wir uns  
dabei auch an „top“ (Time Optimized  
Processes), um Ihnen durch größere  
Schnelligkeit  
den  
entscheidenden  
Wettbewerbsvorsprung zu verschaffen.  
Geben Sie uns die Chance, hohe Leistung  
durch umfassende Qualität zu beweisen.  
Wir werden Sie überzeugen.  
Quality takes on an allencompassing  
significance at Semiconductor Group. For  
us it means living up to each and every one  
of your demands in the best possible way.  
w w w . i n f i n e o n . c o m / g a t e d r i v e r  
Published by Infineon Technologies AG  

1ED020I12-S 替代型号

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