2N2328S

更新时间:2025-01-16 02:18:47
品牌:MICROSEMI
描述:SILICON CONTROLLED RECTIFIER

2N2328S 概述

SILICON CONTROLLED RECTIFIER 可控硅整流器 可控硅整流器

2N2328S 规格参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-5
包装说明:TO-5, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.06
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:1 V最大维持电流:2 mA
JEDEC-95代码:TO-5JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最大通态电流:220 A
最高工作温度:125 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:0.3454 A
断态重复峰值电压:300 V重复峰值反向电压:300 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

2N2328S 数据手册

通过下载2N2328S数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
TECHNICAL DATA  
SILICON CONTROLLED RECTIFIER  
Qualified per MIL-PRF-19500/ 276  
Devices  
Qualified  
Level  
2N2323  
2N2323S  
2N2323A  
2N2324  
2N2324S  
2N2324A  
2N2326  
2N2326S  
2N2326A  
2N2328  
2N2328S  
2N2328A  
JAN  
JANTX  
JANTXV  
2N2329  
2N2329S  
2N2323AS 2N2324AS 2N2326AS 2N2328AS  
MAXIMUM RATINGS  
2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/  
2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S  
Ratings  
Reverse Voltage  
Sym  
2N2329,S Unit  
VRM  
50  
100  
200  
300  
400  
500  
Vdc  
Vpk  
Vpk  
Adc  
Adc  
Vpk  
0C  
Working Peak Reverse Voltage VRM  
75  
150  
300  
400  
Forward Blocking Voltage  
VFBXM  
IO  
50(3/4)  
100(3/4)  
200(3/4)  
0.22  
300(3/4)  
400(3)  
Average Forward Current (1)  
Forward Current Surge Peak(2) IFSM  
15  
6
Cathode-Gate Current  
Operating Temperature  
Storage Junction Temp  
VKGM  
Top  
Tstg  
-65 to +125  
-65 to +150  
0C  
1) This average forward current is for an ambient temperature of 800C and 180 electrical degrees of  
conduction.  
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during  
the first 5 ms after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured  
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.  
3) Gate connected to cathode through 1,000 ohm resistor.  
TO-5  
4) Gate connected to cathode through 2,000 ohm resistor.  
*See appendix A  
for package outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
SUBGROUP 2 TESTING  
Reverse Blocking Current  
R2 = 1 km  
2N2323 thru 2N2329  
2N2323S thru 2N2329S  
2N2323A thru 2N2328A  
2N2323AS thru 2N2328AS  
2N2323, S, A, AS  
2N2324, S, A, AS  
2N2326, S, A, AS  
2N2328, S, A, AS  
2N2329, S,  
R2 = 2 km  
10  
mAdc  
IRBX1  
VR = 50 Vdc  
VR = 100 Vdc  
VR = 200 Vdc  
VR = 300 Vdc  
VR = 400 Vdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
Forward Blocking Current  
R2 = 1 kW  
2N2323 thru 2N2329  
2N2323S thru 2N2329S  
2N2323A thru 2N2328A  
2N2323AS thru 2N2328AS  
2N2323, S, A, AS  
R2 = 2 kW  
IFBX1  
10  
mAdc  
VR = 50 Vdc  
VR = 100 Vdc  
2N2324, S, A, AS  
VR = 200 Vdc  
2N2326, S, A, AS  
VR = 300 Vdc  
2N2328, S, A, AS  
VR = 400 Vdc  
2N2329, S  
Reverse Gate Current  
VKG = 6 Vdc  
IKG  
200  
mAdc  
Gate Trigger Voltage and Current  
V2 = VFBX = 6 Vdc; RL = 100 W  
Re = 1 kW  
Vdc  
mAdc  
Vdc  
2N2323 thru 2N2329 and  
2N2323S thru 2N2329S  
2N2323A thru 2N2328A and  
2N2323AS thru 2N2328AS  
VGT1  
IGT1  
VGT1  
IGT1  
0.35  
0.35  
0.80  
200  
0.60  
20  
Re = 2 kW  
mAdc  
SUBGROUP 4 TESTING  
Exponential Rate of Voltage Rise TA = 1250C  
50 W £ RL £ 400 W, C = 0.1 to 1.0 mF, repetition rate = 60 pps,  
test duration = 15 seconds  
dv/dt = 1.8 v/ms, R3 = 1 kW  
2N2323 thru 2N2329 and  
2N2323S thru 2N2329S  
Vdc  
dv/dt = 0.7 v/ms, R3 = 2 kW  
2N2323A thru 2N2328A and  
2N2323AS thru 2N2328AS  
VFBX  
VAA = 50 Vdc  
VAA = 100 Vdc  
VAA = 200 Vdc  
VAA = 300 Vdc  
VAA = 400 Vdc  
Forward “on” Voltage  
2N2323, S, A, AS  
2N2324, S, A, AS  
2N2326, S, A, AS  
2N2328, S, A, AS  
2N2329, S  
47  
95  
190  
285  
380  
VFM  
2.2  
2.0  
V(pk)  
mAdc  
iFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max  
Holding Current  
VAA = 24 Vdc max, IF1 = 100 mAdc, IF2 = 10 mAdc  
Gate trigger source voltage = 6 Vdc,  
trigger pulse width = 25 ms min., R2 = 330 W  
IHOX  
R3 = 1 kW  
2N2323 thru 2N2329 and  
2N2323S thru 2N2329S  
R3 = 2 kW  
2N2323A thru 2N2328A and  
2N2323AS thru 2N2328AS  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

2N2328S 相关器件

型号 制造商 描述 价格 文档
2N2329 MICROSEMI SCRs 1.6 Amp, Planear 获取价格
2N2329 SEME-LAB Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 获取价格
2N2329 NJSEMI SCR, V(DRM) = 400 V TO 499.9 V 获取价格
2N2329 CENTRAL SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS 获取价格
2N2329 COMSET SILICON THYRISTORS 获取价格
2N2329 ASI 暂无描述 获取价格
2N2329 DIGITRON Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39 获取价格
2N2329A MICROSEMI SILICON CONTROLLED RECTIFIER 获取价格
2N2329A NJSEMI SILICON CONTROLLED RECTIFIERS 获取价格
2N2329A DIGITRON Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 400; Peak Repetitive 获取价格

2N2328S 相关文章

  • LG电子大幅缩减储能业务,解散产品开发团队
    2025-01-17
    11
  • SK 海力士有望2月启动业界最先进1c nm制程DRAM量产
    2025-01-17
    11
  • 英飞凌泰国北榄府半导体后端生产基地正式动工
    2025-01-17
    10
  • 台积电回应CoWoS砍单传闻:纯属谣言,公司持续扩产以满足客户需求
    2025-01-17
    11