SI7442DP
更新时间：2024-11-30 19:15:11
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
概述
规格参数
数据手册SI7442DP 概述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 功率场效应晶体管
SI7442DP 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Transferred | 零件包装代码： | SOT |
| 包装说明： | , | 针数： | 8 |
| Reach Compliance Code： | unknown | 风险等级： | 5.8 |
| 配置： | Single | 最大漏极电流 (Abs) (ID)： | 18 A |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-609代码： | e0 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 5.4 W |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Tin/Lead (Sn/Pb) | Base Number Matches： | 1 |
SI7442DP 数据手册
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PDF下载Si7442DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
PRODUCT SUMMARY
D New Low Thermal Resistance PowerPAKr Package with
Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
D 100% Rg Tested
APPLICATIONS
0.0026 @ V = 10 V
29
25
GS
30
0.0035 @ V = 4.5 V
GS
D DC/DC Converters
-
Low-Side MOSFET in Synchronous Buck in Desktops
D Secondary Synchronous Rectifier
PowerPAK SO-8
D Load Switch
S
D
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
S
Bottom View
Ordering Information: Si7442DP-T1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"12
T
= 25_C
= 70_C
29
25
18
14
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
I
60
DM
a
I
4.5
1.6
S
I
AS
70
A
L= 0.1 mH
Single Pulse Avalanche Energy
E
245
mJ
AS
T
= 25_C
= 70_C
5.4
3.4
1.9
1.2
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71979
S-31728—Rev. B, 18-Aug-03
www.vishay.com
1
Si7442DP
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.6
1.5
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "12 V
GS
I
nA
DS
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0021
0.0026
0.0035
V
= 10 V, I = 29 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 25 A
0.0026
130
GS
D
a
Forward Transconductance
g
fs
V
= 6 V, I = 29 A
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 4.5 A, V = 0 V
0.68
1.1
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
70
19.8
12.8
1.2
31
110
g
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 29 A
nC
DS
GS
D
R
g
0.5
2.0
50
W
t
d(on)
t
r
18
30
V
= 15 V, R = 15 W
L
DD
I
D
^ 1 A, V
= 10 V, R = 6 W
GEN G
Turn-Off Delay Time
Fall Time
t
270
75
400
115
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
55
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
50
40
30
20
10
0
60
V
= 10 thru 3 V
GS
50
40
30
20
10
0
2 V
T
C
= 125_C
25_C
-55_C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 71979
S-31728—Rev. B, 18-Aug-03
www.vishay.com
2
Si7442DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.005
15000
12000
9000
6000
3000
0
C
iss
0.004
0.003
V
= 4.5 V
GS
0.002
0.001
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 29 A
V
= 10 V
GS
DS
I
D
I = 29 A
D
0
20
Q
40
60
80
100
-50
-25
0
J
25
50
75
100 125 150
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.005
0.004
0.003
0.002
0.001
0.000
60
10
T = 150_C
J
I
D
= 29 A
T = 25_C
J
1
0
2
4
6
8
10
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
SD
Document Number: 71979
S-31728—Rev. B, 18-Aug-03
www.vishay.com
3
Si7442DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
200
160
0.3
0.1
I
D
= 250 mA
-0.1
-0.3
-0.5
-0.7
-0.9
120
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Safe Operating Area
100
1 ms
Limited by
r
DS(on)
10
1
10 ms
100 ms
1 s
10 s
T
= 25_C
C
0.1
Single Pulse
dc
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
10
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71979
S-31728—Rev. B, 18-Aug-03
www.vishay.com
4
Si7442DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71979
S-31728—Rev. B, 18-Aug-03
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
SI7442DP 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7442DP-E3 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| SI7442DP-T1-E3 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| SI7444DP-T1-E3 | VISHAY | TRANSISTOR 14 A, 40 V, 0.0061 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7445DP | VISHAY | P-Channel 20-V (D-S) MOSFET | 获取价格 |
|
| SI7445DP-E3 | VISHAY | Transistor, | 获取价格 |
|
| SI7446BDP-T1 | VISHAY | TRANSISTOR 12 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7446BDP-T1-E3 | VISHAY | 12A, 30V, 0.0075ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8 | 获取价格 |
|
| SI7446BDP-T1-GE3 | VISHAY | 12A, 30V, 0.0075ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | 获取价格 |
|
| SI7446DP | VISHAY | SPICE Device Model Si7446DP | 获取价格 |
|
| SI7446DP-T1 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
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