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SI7442DP-E3

更新时间：2025-07-09 18:08:32
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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SI7442DP-E3 概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 功率场效应晶体管

SI7442DP-E3 规格参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.76
配置：Single最大漏极电流 (Abs) (ID)：18 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e3
湿度敏感等级：1工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：5.4 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
Base Number Matches：1

SI7442DP-E3 数据手册

通过下载SI7442DP-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7442DP  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
D PWM Optimized  
D New Low Thermal Resistance PowerPAKt Package with  
PRODUCT SUMMARY  
Low 1.07-mm Profile  
VDS (V)  
rDS(on) (W)  
ID (A)  
APPLICATIONS  
0.0026 @ V = 10 V  
29  
25  
GS  
30  
D DC/DC Converters  
0.0035 @ V = 4.5 V  
GS  
-
Low-Side MOSFET in Synchronous Buck in Desktops  
D Secondary Synchronous Rectifier  
D Load Switch  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
S
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"12  
T
= 25_C  
= 70_C  
29  
25  
18  
14  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.5  
5.4  
3.4  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71979  
S-21575—Rev. A, 09-Sep-02  
www.vishay.com  
1
Si7442DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
0.6  
1.5  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "12 V  
GS  
I
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
5
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0021  
0.0026  
0.0035  
V
= 10 V, I = 29 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 25 A  
0.0026  
130  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 6 V, I = 29 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
S
= 4.5 A, V = 0 V  
0.68  
1.1  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
70  
19.8  
12.8  
1.2  
31  
110  
g
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 29 A  
nC  
DS  
GS  
D
R
g
W
t
50  
30  
d(on)  
t
r
18  
V
= 15 V, R = 15 W  
L
DD  
I
D
^ 1 A, V  
= 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
270  
75  
400  
115  
80  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.9 A, di/dt = 100 A/ms  
55  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
50  
40  
30  
20  
10  
0
60  
V
= 10 thru 3 V  
GS  
50  
40  
30  
20  
10  
0
2 V  
T
C
= 125_C  
25_C  
-55 _C  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0
1
2
3
4
5
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71979  
S-21575—Rev. A, 09-Sep-02  
www.vishay.com  
2
Si7442DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.005  
15000  
12000  
9000  
6000  
3000  
0
C
iss  
0.004  
0.003  
V
= 4.5 V  
GS  
0.002  
0.001  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
60  
0
4
8
12  
16  
20  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 29 A  
V
= 10 V  
GS  
DS  
I
D
I = 29 A  
D
0
20  
Q
40  
60  
80  
100  
-50  
-25  
0
25  
50  
75  
100 125 150  
- Total Gate Charge (nC)  
T - Junction Temperature (_C)  
J
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.005  
0.004  
0.003  
0.002  
0.001  
0.000  
60  
10  
T = 150_C  
J
I
D
= 29 A  
T = 25_C  
J
1
0
2
4
6
8
10  
0.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
SD  
Document Number: 71979  
S-21575—Rev. A, 09-Sep-02  
www.vishay.com  
3
Si7442DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
200  
160  
0.3  
0.1  
I
D
= 250 mA  
-0.1  
-0.3  
-0.5  
-0.7  
-0.9  
120  
80  
40  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
- Temperature (_C)  
Time (sec)  
Safe Operating Area  
100  
1 ms  
Limited by  
r
DS(on)  
10  
1
10 ms  
100 ms  
1 s  
10 s  
T
= 25_C  
C
0.1  
Single Pulse  
dc  
0.01  
0.1  
1
10  
100  
V
- Drain-to-Source Voltage (V)  
DS  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
10  
4. Surface Mounted  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71979  
S-21575—Rev. A, 09-Sep-02  
www.vishay.com  
4
Si7442DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71979  
S-21575—Rev. A, 09-Sep-02  
www.vishay.com  
5

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