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SI7820DN-T1-E3

更新时间：2025-01-11 01:50:26
品牌：VISHAY
描述：N-Channel 200-V (D-S) MOSFET

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SI7820DN-T1-E3 概述

N-Channel 200-V (D-S) MOSFET N沟道200 -V （D -S ）的MOSFET 功率场效应晶体管

SI7820DN-T1-E3 规格参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-XDSO-C5针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：1.34雪崩能效等级（Eas）：0.6 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：1.7 A
最大漏极电流 (ID)：1.7 A最大漏源导通电阻：0.24 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：S-XDSO-C5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：3.8 W
最大脉冲漏极电流 (IDM)：10 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7820DN-T1-E3 数据手册

通过下载SI7820DN-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7820DN  
Vishay Siliconix  
New Product  
N-Channel 200-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D PWM-Optimized TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D 100% Rg Tested  
D Avalanche Tested  
APPLICATIONS  
0.240 @ V = 10 V  
GS  
2.6  
2.5  
200  
0.250 @ V = 6 V  
GS  
D Primary Side Switch  
− Telecom Power Supplies  
− Distributed Power Architectures  
− Miniature Power Modules  
PowerPAK 1212-8  
D
S
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
Ordering Information: Si7820DN-T1—E3  
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
200  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
2.6  
2.1  
1.7  
1.3  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
10  
DM  
a
Continuous Source Current (Diode Conduction)  
Single Avalanche Current  
I
3.2  
1.3  
S
I
AS  
3.5  
0.6  
L = 0.1 mH  
Single Avalanche Energy  
E
AS  
mJ  
T
= 25_C  
= 70_C  
3.8  
2.0  
1.5  
0.8  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
65  
33  
81  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.9  
2.4  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72581  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
1
Si7820DN  
Vishay Siliconix  
New Product  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
4
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= 200 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 200 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
10  
A
V
DS  
w 5 V, V = 10 V  
GS  
D(on)  
0.200  
0.240  
0.250  
V
= 10 V, I = 2.6 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6 V, I = 2.5 A  
0.210  
8
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 2.6 A  
S
V
DS  
D
a
Diode Forward Voltage  
V
SD  
I
= 3.2 A, V = 0 V  
0.78  
1.2  
18  
S
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
12.1  
2.5  
4.1  
2.3  
11  
g
Q
Q
V
= 100 V, V = 10 V, I = 2.6 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
f = 1 MHz  
1
3.9  
20  
W
t
d(on)  
t
r
12  
20  
V
DD  
= 100 V, R = 100 W  
L
I
D
^ 1 A, V  
= 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
30  
45  
ns  
d(off)  
t
f
17  
30  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 3.2 A, di/dt = 100 A/ms  
65  
100  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
10  
10  
8
V
GS  
= 10 thru 6 V  
5 V  
8
6
4
2
0
6
4
T
= 125_C  
C
2
25_C  
4 V  
−55_C  
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72581  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
2
Si7820DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.35  
800  
700  
600  
500  
400  
300  
200  
100  
0
0.28  
C
iss  
V
GS  
= 6 V  
0.21  
0.14  
0.07  
0.00  
V
GS  
= 10 V  
C
oss  
C
rss  
0
2
4
6
8
10  
0
20  
40  
60  
80  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
V
D
= 100 V  
V
GS  
= 10 V  
DS  
I
= 2.6  
A
I = 2.6 A  
D
6
4
2
0
0
2
4
6
8
10  
12  
−50 −25  
0
25  
50  
75  
100 125 150  
Q
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.8  
0.6  
0.4  
0.2  
0.0  
10  
T
= 150_C  
J
I
D
= 2.6 A  
T
= 25_C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72581  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
3
Si7820DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-to-Ambient  
0.6  
50  
40  
30  
0.4  
I
D
= 250 mA  
0.2  
−0.0  
−0.2  
−0.4  
−0.6  
−0.8  
−1.0  
−1.2  
20  
10  
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.01  
0.1  
1
10  
100  
600  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
1000  
I
Limited  
DM  
r
Limited  
DS(on)  
10  
1
P(t) = 0.0001  
P(t) = 0.001  
P(t) = 0.01  
P(t) = 0.1  
I
D(on)  
Limited  
0.1  
P(t) = 1  
P(t) = 10  
dc  
T
= 25_C  
A
Single Pulse  
0.01  
BV  
DSS  
Limited  
0.001  
0.1  
1
10  
100  
1000  
V
DS  
− Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2
2. Per Unit Base = R  
= 65_C/W  
thJA  
(t)  
3. T − T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72581  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
4
Si7820DN  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.05  
0.02  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72581  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
5

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