SI7840DP-T1
更新时间:2025-01-11 18:43:29
品牌:VISHAY
描述:Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
SI7840DP-T1 概述
Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8 功率场效应晶体管
SI7840DP-T1 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POWERPAK, SOP-8 | Reach Compliance Code: | compliant |
风险等级: | 5.33 | 雪崩能效等级(Eas): | 80 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.0095 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-C5 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5 W |
最大脉冲漏极电流 (IDM): | 40 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | C BEND | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
SI7840DP-T1 数据手册
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PDF下载Si7840DP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
0.0095 @ V = 10 V
18
15
GS
30
0.014 @ V = 4.5 V
GS
APPLICATIONS
D DC/DC Converters
D Optimized for “High-Side” Synchronous
Rectifier Operation
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7840DP-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
18
14
11
8
A
a
Continuous Drain Current (T = 150__C)
I
D
J
T
A
Pulsed Drain Current
I
40
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
4.1
1.6
S
I
AS
40
80
L = 0.1 mH
Avalanche Energy
E
mJ
AS
T
= 25_C
= 70_C
5.0
3.2
1.9
1.2
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
20
52
25
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
2.1
2.6
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
www.vishay.com
1
Si7840DP
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
"100
nA
DS
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
DS
GS
J
NO TAG
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0077
0.0095
0.014
V
= 10 V, I = 18 A
D
GS
NO TAG
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 15 A
0.0115
40
GS
DS
D
NO TAG
Forward Transconductance
g
fs
V
= 15 V, I = 18 A
S
V
D
NO TAG
Diode Forward Voltage
V
I
S
= 4.1 A, V = 0 V
0.75
1.2
23
SD
GS
DynamicNO TAG
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
g
15.5
3.8
6
Q
gs
Q
gd
V
= 15 V, V = 5.0 V, I = 18 A
nC
DS
GS
D
R
g
0.2
0.8
17
14
39
19
50
1.2
26
21
60
30
80
W
t
d(on)
t
r
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 4.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
= 10 thru 4 V
GS
32
24
16
8
3 V
T
C
= 125_C
25_C
-55_C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
www.vishay.com
2
Si7840DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
2500
2000
1500
1000
500
0.016
C
iss
V
= 4.5 V
GS
0.012
0.008
0.004
0.000
V
= 10 V
GS
C
oss
C
rss
0
0
8
16
24
32
40
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
V
= 10 V
GS
DS
I
D
= 18
A
I = 18 A
D
6
4
2
0
0
6
12
18
24
30
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
40
I
D
= 18 A
T = 150_C
J
10
T = 25_C
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
www.vishay.com
3
Si7840DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-to-Ambient
0.4
200
160
120
I
D
= 250 mA
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
Z
3. T
- T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71624
S-31728—Rev. D, 18-Aug-03
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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