SI7842DP-T1-E3
更新时间：2025-03-12 15:08:26
品牌：VISHAY
描述：Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R
概述
规格参数
数据手册
替代型号SI7842DP-T1-E3 概述
Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R MOS管 功率场效应晶体管
SI7842DP-T1-E3 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Obsolete |
| 零件包装代码： | SOT | 包装说明： | SMALL OUTLINE, R-XDSO-C6 |
| 针数： | 8 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 5.8 |
| Is Samacsys： | N | 外壳连接： | DRAIN |
| 配置： | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 6.3 A | 最大漏极电流 (ID)： | 6.3 A |
| 最大漏源导通电阻： | 0.022 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-XDSO-C6 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 2 |
| 端子数量： | 6 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | UNSPECIFIED |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 3.5 W | 最大脉冲漏极电流 (IDM)： | 30 A |
| 认证状态： | Not Qualified | 子类别： | FET General Purpose Power |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | C BEND | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 40 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI7842DP-T1-E3 数据手册
通过下载SI7842DP-T1-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Si7842DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Available
LITTLE FOOT® Plus Schottky
VDS (V)
RDS(on) (Ω)
ID (A)
10
0.022 at VGS = 10 V
0.030 at VGS = 4.5 V
•
•
30
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
8.5
SCHOTTKY PRODUCT SUMMARY
• 100 % Rg Tested
VSD (V)
Diode Forward Voltage
APPLICATIONS
VDS (V)
IF (A)
•
Bus and Logic DC-DC
30
0.50 V at 1.0 A
3.0
PowerPAK SO-8
D
2
S1
D
1
5.15 mm
6.15 mm
1
G1
2
S2
3
G2
4
Schottky Diode
D1
G
1
G
8
2
D1
7
D2
6
D2
5
S
2
S
1
Bottom View
Ordering Information: Si7842DP-T1-E3 (Lead (Pb)-free)
N-Channel MOSFET
N-Channel MOSFET
Si7842DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
10 s
Steady State
Parameter
Symbol
Unit
VDS
30
20
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TA = 25 °C
TA = 70 °C
10
6.3
5.0
Continuous Drain Current (TJ = 150 °C)a
ID
6.0
A
IDM
IS
30
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
2.9
3.5
2.2
1.1
1.4
0.9
TA = 25 °C
Maximum Power Dissipationa
PD
W
TA = 70 °C
TJ, Tstg
- 55 to 150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
°C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Typical Maximum
Parameter
Typical
Maximum
Symbol
Unit
26
60
35
85
26
60
35
85
t ≤ 10 s
Steady State
Steady State
Maximum Junction-to-Ambienta
RthJA
°C/W
RthJC
3.9
5.5
3.9
5.5
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1
Si7842DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Typ.b
Symbol
Test Condition
Min.
Max.
Unit
Parameter
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
Gate-Body Leakage
0.8
2.4
V
VDS = 0 V, VGS
=
20 V
100
1
nA
Ch-1
Ch-2
Ch-1
Ch-2
VDS = 30 V, VGS = 0 V
100
15
IDSS
Zero Gate Voltage Drain Current
µA
V
DS = 30 V, VGS = 0 V, TJ = 85 °C
2000
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 7.5 A
20
A
0.018
0.024
0.022
0.030
Drain-Source On-State Resistancea
RDS(on)
Ω
V
GS = 4.5 V, ID = 6.5 A
Forward Transconductancea
Diode Forward Voltagea
gfs
VDS = 15 V, ID = 7.5 A
22
0.8
S
V
Ch-1
Ch-2
1.2
0.5
VSD
IS = 1 A, VGS = 0 V
0.47
Dynamicb
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
13
2
20
V
DS = 15 V, VGS = 10 V, ID = 7.5 A
nC
2.7
1.2
8
0.5
3.2
16
20
40
Ω
td(on)
tr
td(off)
tf
10
21
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
ns
10
40
32
20
80
70
Ch-1
Ch-2
Source-Drain Reverse Recovery
Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min.
Typ.
0.47
0.36
0.004
0.7
Max.
0.50
0.42
0.100
10
Unit
IF = 1.0 A
VF
Forward Voltage Drop
V
IF = 1.0 A, TJ = 125 °C
Vr = 30 V
Irm
CT
Vr = 30 V, TJ = 100 °C
Vr = – 30 V, TJ = 125 °C
Vr = 10 V
Maximum Reverse Leakage Current
Junction Capacitance
mA
pF
3.0
20
50
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
Si7842DP
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
16
12
8
20
3 V
V
GS
= 10 V thru 4 V
16
12
8
T
= 125 °C
C
4
4
25 °C
2 V
- 55 °C
2.5
0
0.0
0
0.0
0.5
1.0
1.5
2.0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.040
0.032
0.024
0.016
0.008
800
600
400
200
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0.000
0
0
6
12
18
24
30
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
10
8
V = 10 V
GS
D
V
D
= 15 V
DS
= 7.5 A
I = 7.5 A
I
6
4
2
0
0
- 50 - 25
0
25
50
75
100 125 150
3
6
9
12
15
T
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
3
Si7842DP
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.04
20
T
= 150 °C
J
I
D
= 7.5 A
10
0.03
0.02
0.01
0.00
T
= 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.2
100
80
60
40
I
D
= 250 μA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
20
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
1
10
0.1
T
- Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 60 °C/W
thJA
(t)
3. T
- T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
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4
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
Si7842DP
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-5
-4
-3
-2
-1
10
10
10
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
10
T
= 150 °C
J
1
0.1
30 V
T
= 25 °C
J
24 V
0.01
0.001
0.0001
1
0.0
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
T
- Temperature (°C)
J
V
F
- Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
200
160
120
80
C
oss
40
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71617.
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
5
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
SI7842DP-T1-E3 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| SI7842DP-T1-GE3 | VISHAY | Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R | 类似代替 |
|
| SI7872DP-T1-E3 | VISHAY | Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R | 类似代替 |
|
SI7842DP-T1-E3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7842DP-T1-GE3 | VISHAY | Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7844DP | VISHAY | Dual N-Channel 30-V (D-S) MOSFET | 获取价格 |
|
| SI7844DP-T1-E3 | VISHAY | Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7844DP-T1-GE3 | VISHAY | Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7846DP | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
|
| SI7846DP-E3 | VISHAY | TRANSISTOR 4 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
|
| SI7846DP-T1 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
|
| SI7846DP-T1-E3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
|
| SI7846DP-T1-GE3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
|
| SI7848BDP | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
|
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