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SI7842DP-E3

更新时间：2025-06-28 15:08:26
品牌：VISHAY
描述：TRANSISTOR 6.3 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

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SI7842DP-E3 概述

TRANSISTOR 6.3 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 功率场效应晶体管

SI7842DP-E3 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C6针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：6.3 A最大漏极电流 (ID)：6.3 A
最大漏源导通电阻：0.022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XDSO-C6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：3.5 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7842DP-E3 数据手册

通过下载SI7842DP-E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7842DP  
Vishay Siliconix  
New Product  
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode  
PRODUCT SUMMARY  
FEATURES  
VDS (V)  
rDS(on) (W)  
ID (A)  
D LITTLE FOOT Plust Schottky  
0.022 @ V = 10 V  
GS  
10  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
30  
0.030 @ V = 4.5 V  
8.5  
GS  
APPLICATIONS  
SCHOTTKY PRODUCT SUMMARY  
D Bus and Logic DC-DC  
VSD (V)  
VDS (V)  
IF (A)  
Diode Forward Voltage  
30  
0.50 V @ 1.0 A  
3.0  
PowerPAKt SO-8  
D
1
D
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
Schottky Diode  
3
G2  
G
1
G
2
4
D1  
8
D1  
7
D2  
6
D2  
5
S
1
S
2
N-Channel MOSFET  
Bottom View  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
10  
6.3  
5.0  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
6.0  
A
Pulsed Drain Current  
I
30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
2.9  
3.5  
2.2  
1.1  
1.4  
0.9  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
MOSFET  
Schottky  
Typ  
Max  
Typ  
Max  
Parameter  
Symbol  
Unit  
t v 10 sec  
26  
60  
35  
85  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
thJC  
Steady-State  
Steady-State  
_C/W  
Maximum Junction-to-Case (Drain)  
R
3.9  
5.5  
3.9  
5.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71617  
S-03834—Rev. A, 28-May-01  
www.vishay.com  
1
Si7842DP  
New Product  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
0.8  
V
GS(th)  
DS  
GS  
D
I
V
DS  
= 0 V, V = "20 V  
"100  
1
nA  
GSS  
GS  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
V
DS  
= 24 V, V = 0 V  
GS  
100  
15  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 24 V, V = 0 V, T = 85_C  
GS  
J
2000  
b
On-State Drain Current  
I
V
= 5 V, V = 10 V  
20  
A
D(on)  
DS  
GS  
GS  
GS  
V
= 10 V, I = 7.5 A  
0.018  
0.024  
22  
0.022  
0.030  
D
b
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 6.5 A  
D
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 7.5 A  
S
DS  
D
0.8  
1.2  
0.5  
Ch-1  
Ch-2  
b
Diode Forward Voltage  
V
SD  
I
S
= 1 A, V = 0 V  
V
GS  
0.47  
Dynamica  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Q
13  
2
20  
g
Q
Q
V
DS  
= 15 V, V = 10 V, I = 7.5 A  
nC  
gs  
gd  
GS  
D
2.7  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
R
1.2  
8
W
G
t
16  
20  
40  
20  
80  
70  
d(on)  
t
r
10  
21  
10  
40  
32  
V
= 15 V, R = 15 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
D
^ 1 A, V  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Ch-1  
Ch-2  
Source-Drain Reverse Recovery Time  
t
rr  
I = 1.7 A, di/dt = 100 A/ms  
F
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
I
= 1.0 A  
0.47  
0.36  
0.004  
0.7  
0.50  
0.42  
0.100  
10  
F
Forward Voltage Drop  
V
V
F
I
= 1.0 A, T = 125_C  
F
J
V = 30 V  
r
V = 30 V, T = 100_C  
Maximum Reverse Leakage Current  
Junction Capacitance  
I
rm  
mA  
pF  
r
J
V = –30 V, T = 125_C  
3.0  
20  
r
J
V = 10 V  
r
C
50  
T
Document Number: 71617  
www.vishay.com  
S-03834—Rev. A, 28-May-01  
2
Si7842DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
MOSFET  
Output Characteristics  
Transfer Characteristics  
20  
20  
16  
12  
8
3 V  
V
GS  
= 10 thru 4 V  
16  
12  
8
T
= 125_C  
C
4
4
25_C  
2 V  
–55_C  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.040  
0.032  
0.024  
0.016  
0.008  
1000  
800  
600  
400  
200  
0
C
iss  
V
= 4.5 V  
GS  
V
= 10 V  
GS  
C
oss  
C
rss  
0.000  
0
4
8
12  
16  
20  
0
6
12  
18  
24  
30  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 7.5 A  
V
= 10 V  
DS  
GS  
I
D
I = 7.5 A  
D
6
4
2
0
0
3
6
9
12  
15  
–50 –25  
0
25  
50  
75  
100 125 150  
Q
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
g
Document Number: 71617  
www.vishay.com  
S-03834—Rev. A, 28-May-01  
3
Si7842DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
MOSFET  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.04  
0.03  
0.02  
0.01  
0.00  
20  
T
= 150_C  
J
I
= 7.5 A  
D
10  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
– Source-to-Drain Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.4  
0.2  
100  
80  
I
D
= 250 mA  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
60  
40  
20  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
1
10  
0.1  
T
– Temperature (_C)  
Time (sec)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60_C/W  
thJA  
(t)  
3. T – T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71617  
S-03834—Rev. A, 28-May-01  
www.vishay.com  
4
Si7842DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
MOSFET  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
10  
1
Square Wave Pulse Duration (sec)  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
SCHOTTKY  
Reverse Current vs. Junction Temperature  
Forward Voltage Drop  
20  
10  
10  
T
= 150_C  
J
1
30 V  
0.1  
T
= 25_C  
J
24 V  
0.01  
0.001  
0.0001  
1
0.0  
0
25  
50  
75  
100  
125  
150  
0.3  
0.6  
0.9  
1.2  
1.5  
T
– Temperature (_C)  
V – Forward Voltage Drop (V)  
F
J
Capacitance  
200  
160  
120  
80  
40  
0
C
oss  
0
6
12  
18  
24  
30  
V
DS  
– Drain-to-Source Voltage (V)  
Document Number: 71617  
S-03834—Rev. A, 28-May-01  
www.vishay.com  
5

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