SI7842DP-E3
更新时间：2025-01-11 15:08:26
品牌：VISHAY
描述：TRANSISTOR 6.3 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
概述
规格参数
数据手册SI7842DP-E3 概述
TRANSISTOR 6.3 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 功率场效应晶体管
SI7842DP-E3 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-XDSO-C6 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.84 | 外壳连接： | DRAIN |
| 配置： | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 6.3 A | 最大漏极电流 (ID)： | 6.3 A |
| 最大漏源导通电阻： | 0.022 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-XDSO-C6 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 6 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | UNSPECIFIED |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 3.5 W | 最大脉冲漏极电流 (IDM)： | 30 A |
| 认证状态： | Not Qualified | 子类别： | FET General Purpose Power |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | C BEND | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 40 | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI7842DP-E3 数据手册
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PDF下载Si7842DP
Vishay Siliconix
New Product
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
VDS (V)
rDS(on) (W)
ID (A)
D LITTLE FOOT Plust Schottky
0.022 @ V = 10 V
GS
10
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
30
0.030 @ V = 4.5 V
8.5
GS
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
D Bus and Logic DC-DC
VSD (V)
VDS (V)
IF (A)
Diode Forward Voltage
30
0.50 V @ 1.0 A
3.0
PowerPAKt SO-8
D
1
D
2
S1
5.15 mm
6.15 mm
1
G1
2
S2
Schottky Diode
3
G2
G
1
G
2
4
D1
8
D1
7
D2
6
D2
5
S
1
S
2
N-Channel MOSFET
Bottom View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
T
= 25_C
= 70_C
10
6.3
5.0
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
6.0
A
Pulsed Drain Current
I
30
DM
a
Continuous Source Current (Diode Conduction)
I
2.9
3.5
2.2
1.1
1.4
0.9
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Typ
Max
Typ
Max
Parameter
Symbol
Unit
t v 10 sec
26
60
35
85
26
60
35
85
a
Maximum Junction-to-Ambient
R
thJA
thJC
Steady-State
Steady-State
_C/W
Maximum Junction-to-Case (Drain)
R
3.9
5.5
3.9
5.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71617
S-03834—Rev. A, 28-May-01
www.vishay.com
1
Si7842DP
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED).
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
0.8
V
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "20 V
"100
1
nA
GSS
GS
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 24 V, V = 0 V
GS
100
15
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 24 V, V = 0 V, T = 85_C
GS
J
2000
b
On-State Drain Current
I
V
= 5 V, V = 10 V
20
A
D(on)
DS
GS
GS
GS
V
= 10 V, I = 7.5 A
0.018
0.024
22
0.022
0.030
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 6.5 A
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 7.5 A
S
DS
D
0.8
1.2
0.5
Ch-1
Ch-2
b
Diode Forward Voltage
V
SD
I
S
= 1 A, V = 0 V
V
GS
0.47
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
13
2
20
g
Q
Q
V
DS
= 15 V, V = 10 V, I = 7.5 A
nC
gs
gd
GS
D
2.7
Gate Resistance
Turn-On Delay Time
Rise Time
R
1.2
8
W
G
t
16
20
40
20
80
70
d(on)
t
r
10
21
10
40
32
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Ch-1
Ch-2
Source-Drain Reverse Recovery Time
t
rr
I = 1.7 A, di/dt = 100 A/ms
F
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
= 1.0 A
0.47
0.36
0.004
0.7
0.50
0.42
0.100
10
F
Forward Voltage Drop
V
V
F
I
= 1.0 A, T = 125_C
F
J
V = 30 V
r
V = 30 V, T = 100_C
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
mA
pF
r
J
V = –30 V, T = 125_C
3.0
20
r
J
V = 10 V
r
C
50
T
Document Number: 71617
www.vishay.com
S-03834—Rev. A, 28-May-01
2
Si7842DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
Transfer Characteristics
20
20
16
12
8
3 V
V
GS
= 10 thru 4 V
16
12
8
T
= 125_C
C
4
4
25_C
2 V
–55_C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.040
0.032
0.024
0.016
0.008
1000
800
600
400
200
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0.000
0
4
8
12
16
20
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 7.5 A
V
= 10 V
DS
GS
I
D
I = 7.5 A
D
6
4
2
0
0
3
6
9
12
15
–50 –25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Document Number: 71617
www.vishay.com
S-03834—Rev. A, 28-May-01
3
Si7842DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.04
0.03
0.02
0.01
0.00
20
T
= 150_C
J
I
= 7.5 A
D
10
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
0.2
100
80
I
D
= 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
60
40
20
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
1
10
0.1
T
– Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 60_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71617
S-03834—Rev. A, 28-May-01
www.vishay.com
4
Si7842DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
10
1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
Reverse Current vs. Junction Temperature
Forward Voltage Drop
20
10
10
T
= 150_C
J
1
30 V
0.1
T
= 25_C
J
24 V
0.01
0.001
0.0001
1
0.0
0
25
50
75
100
125
150
0.3
0.6
0.9
1.2
1.5
T
– Temperature (_C)
V – Forward Voltage Drop (V)
F
J
Capacitance
200
160
120
80
40
0
C
oss
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71617
S-03834—Rev. A, 28-May-01
www.vishay.com
5
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