SI7842DP-T1-GE3

更新时间:2025-02-07 15:08:26
品牌:VISHAY
描述:Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R

SI7842DP-T1-GE3 概述

Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R MOS管 功率场效应晶体管

SI7842DP-T1-GE3 规格参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-XDSO-C6
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):6.3 A
最大漏极电流 (ID):6.3 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-C6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7842DP-T1-GE3 数据手册

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Si7842DP  
Vishay Siliconix  
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Available  
LITTLE FOOT® Plus Schottky  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
10  
0.022 at VGS = 10 V  
0.030 at VGS = 4.5 V  
30  
New Low Thermal Resistance PowerPAK®  
Package with Low 1.07 mm Profile  
8.5  
SCHOTTKY PRODUCT SUMMARY  
100 % Rg Tested  
VSD (V)  
Diode Forward Voltage  
APPLICATIONS  
VDS (V)  
IF (A)  
Bus and Logic DC-DC  
30  
0.50 V at 1.0 A  
3.0  
PowerPAK SO-8  
D
2
S1  
D
1
5.15 mm  
6.15 mm  
1
G1  
2
S2  
3
G2  
4
Schottky Diode  
D1  
G
1
G
8
2
D1  
7
D2  
6
D2  
5
S
2
S
1
Bottom View  
Ordering Information: Si7842DP-T1-E3 (Lead (Pb)-free)  
N-Channel MOSFET  
N-Channel MOSFET  
Si7842DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
10 s  
Steady State  
Parameter  
Symbol  
Unit  
VDS  
30  
20  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
TA = 25 °C  
TA = 70 °C  
10  
6.3  
5.0  
Continuous Drain Current (TJ = 150 °C)a  
ID  
6.0  
A
IDM  
IS  
30  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
2.9  
3.5  
2.2  
1.1  
1.4  
0.9  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
TJ, Tstg  
- 55 to 150  
260  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
°C  
THERMAL RESISTANCE RATINGS  
MOSFET  
Schottky  
Typical Maximum  
Parameter  
Typical  
Maximum  
Symbol  
Unit  
26  
60  
35  
85  
26  
60  
35  
85  
t 10 s  
Steady State  
Steady State  
Maximum Junction-to-Ambienta  
RthJA  
°C/W  
RthJC  
3.9  
5.5  
3.9  
5.5  
Maximum Junction-to-Case (Drain)  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71617  
S09-0227-Rev. D, 09-Feb-09  
www.vishay.com  
1
Si7842DP  
Vishay Siliconix  
SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Typ.b  
Symbol  
Test Condition  
Min.  
Max.  
Unit  
Parameter  
Static  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 µA  
Gate Threshold Voltage  
Gate-Body Leakage  
0.8  
2.4  
V
VDS = 0 V, VGS  
=
20 V  
100  
1
nA  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
VDS = 30 V, VGS = 0 V  
100  
15  
IDSS  
Zero Gate Voltage Drain Current  
µA  
V
DS = 30 V, VGS = 0 V, TJ = 85 °C  
2000  
On-State Drain Currenta  
ID(on)  
VDS = 5 V, VGS = 10 V  
VGS = 10 V, ID = 7.5 A  
20  
A
0.018  
0.024  
0.022  
0.030  
Drain-Source On-State Resistancea  
RDS(on)  
Ω
V
GS = 4.5 V, ID = 6.5 A  
Forward Transconductancea  
Diode Forward Voltagea  
gfs  
VDS = 15 V, ID = 7.5 A  
22  
0.8  
S
V
Ch-1  
Ch-2  
1.2  
0.5  
VSD  
IS = 1 A, VGS = 0 V  
0.47  
Dynamicb  
Qg  
Qgs  
Qgd  
Rg  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
13  
2
20  
V
DS = 15 V, VGS = 10 V, ID = 7.5 A  
nC  
2.7  
1.2  
8
0.5  
3.2  
16  
20  
40  
Ω
td(on)  
tr  
td(off)  
tf  
10  
21  
V
DD = 15 V, RL = 15 Ω  
ID 1 A, VGEN = 10 V, Rg = 6 Ω  
Turn-Off Delay Time  
Fall Time  
ns  
10  
40  
32  
20  
80  
70  
Ch-1  
Ch-2  
Source-Drain Reverse Recovery  
Time  
trr  
IF = 1.7 A, dI/dt = 100 A/µs  
Notes:  
a. Pulse test; pulse width 300 µs, duty cycle 2 %.  
b. Guaranteed by design, not subject to production testing.  
SCHOTTKY SPECIFICATIONS T = 25 °C, unless otherwise noted  
J
Parameter  
Symbol  
Test Condition  
Min.  
Typ.  
0.47  
0.36  
0.004  
0.7  
Max.  
0.50  
0.42  
0.100  
10  
Unit  
IF = 1.0 A  
VF  
Forward Voltage Drop  
V
IF = 1.0 A, TJ = 125 °C  
Vr = 30 V  
Irm  
CT  
Vr = 30 V, TJ = 100 °C  
Vr = – 30 V, TJ = 125 °C  
Vr = 10 V  
Maximum Reverse Leakage Current  
Junction Capacitance  
mA  
pF  
3.0  
20  
50  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
2
Document Number: 71617  
S09-0227-Rev. D, 09-Feb-09  
Si7842DP  
Vishay Siliconix  
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
20  
16  
12  
8
20  
3 V  
V
GS  
= 10 V thru 4 V  
16  
12  
8
T
= 125 °C  
C
4
4
25 °C  
2 V  
- 55 °C  
2.5  
0
0.0  
0
0.0  
0.5  
1.0  
1.5  
2.0  
3.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
GS  
- Gate-to-Source Voltage (V)  
V
DS  
- Drain-to-Source Voltage (V)  
Output Characteristics  
Transfer Characteristics  
1000  
0.040  
0.032  
0.024  
0.016  
0.008  
800  
600  
400  
200  
0
C
iss  
V
= 4.5 V  
GS  
V
= 10 V  
GS  
C
oss  
C
rss  
0.000  
0
0
6
12  
18  
24  
30  
4
8
12  
16  
20  
V
DS  
- Drain-to-Source Voltage (V)  
I
D
- Drain Current (A)  
On-Resistance vs. Drain Current  
Capacitance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
10  
8
V = 10 V  
GS  
D
V
D
= 15 V  
DS  
= 7.5 A  
I = 7.5 A  
I
6
4
2
0
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
3
6
9
12  
15  
T
- Junction Temperature (°C)  
Q
- Total Gate Charge (nC)  
J
Gate Charge  
On-Resistance vs. Junction Temperature  
Document Number: 71617  
S09-0227-Rev. D, 09-Feb-09  
www.vishay.com  
3
Si7842DP  
Vishay Siliconix  
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
0.04  
20  
T
= 150 °C  
J
I
D
= 7.5 A  
10  
0.03  
0.02  
0.01  
0.00  
T
= 25 °C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
On-Resistance vs. Gate-to-Source Voltage  
Source-Drain Diode Forward Voltage  
0.4  
0.2  
100  
80  
60  
40  
I
D
= 250 μA  
0.0  
- 0.2  
- 0.4  
- 0.6  
- 0.8  
20  
0
- 50 - 25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
1
10  
0.1  
T
- Temperature (°C)  
J
Time (s)  
Threshold Voltage  
Single Pulse Power  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60 °C/W  
thJA  
(t)  
3. T  
- T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
10  
100  
600  
www.vishay.com  
4
Document Number: 71617  
S09-0227-Rev. D, 09-Feb-09  
Si7842DP  
Vishay Siliconix  
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
1
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
20  
10  
10  
T
= 150 °C  
J
1
0.1  
30 V  
T
= 25 °C  
J
24 V  
0.01  
0.001  
0.0001  
1
0.0  
0
25  
50  
75  
100  
125  
150  
0.3  
0.6  
0.9  
1.2  
1.5  
T
- Temperature (°C)  
J
V
F
- Forward Voltage Drop (V)  
Reverse Current vs. Junction Temperature  
Forward Voltage Drop  
200  
160  
120  
80  
C
oss  
40  
0
0
6
12  
18  
24  
30  
V
DS  
- Drain-to-Source Voltage (V)  
Capacitance  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?71617.  
Document Number: 71617  
S09-0227-Rev. D, 09-Feb-09  
www.vishay.com  
5
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1

SI7842DP-T1-GE3 替代型号

型号 制造商 描述 替代类型 文档
SI7842DP-T1-E3 VISHAY Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R 类似代替
SI7872DP-T1-E3 VISHAY Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R 类似代替

SI7842DP-T1-GE3 相关器件

型号 制造商 描述 价格 文档
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SI7844DP-T1-E3 VISHAY Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R 获取价格
SI7844DP-T1-GE3 VISHAY Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R 获取价格
SI7846DP VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7846DP-E3 VISHAY TRANSISTOR 4 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power 获取价格
SI7846DP-T1 VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7846DP-T1-E3 VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7846DP-T1-GE3 VISHAY N-Channel 150-V (D-S) MOSFET 获取价格
SI7848BDP VISHAY N-Channel 40-V (D-S) MOSFET 获取价格
SI7848BDP-T1-E3 VISHAY N-Channel 40-V (D-S) MOSFET 获取价格

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