概述
规格参数
数据手册SI7852DP-T1-GE3 概述
N-Channel 80-V (D-S) MOSFET N通道80 -V （D -S ）的MOSFET 功率场效应晶体管
SI7852DP-T1-GE3 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-XDSO-C5 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.63 | Is Samacsys： | N |
| 外壳连接： | DRAIN | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 80 V | 最大漏极电流 (Abs) (ID)： | 7.6 A |
| 最大漏极电流 (ID)： | 7.6 A | 最大漏源导通电阻： | 0.0165 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-XDSO-C5 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 5 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 5.2 W |
| 最大脉冲漏极电流 (IDM)： | 50 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | C BEND |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
SI7852DP-T1-GE3 数据手册
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PDF下载Si7852DP
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
12.5
10.9
Available
TrenchFET® Power MOSFETS
0.0165 at VGS = 10 V
0.022 at VGS = 6 V
•
•
80
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
•
•
PWM Optimized for Fast Switching
100 % Rg Tested
PowerPAK SO-8
APPLICATIONS
•
Primary Side Switch for DC/DC Applications
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
5
G
Bottom View
S
Ordering Information:
Si7852DP-T1-E3 (Lead (Pb)-free)
Si7852DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
80
V
VGS
20
TA = 25 °C
TA = 70 °C
12.5
10.0
7.6
6.1
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IAS
IS
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)a
50
40
A
L = 0.1 mH
4.7
5.2
3.3
1.7
1.9
1.2
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
PD
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
19
Maximum
Unit
t ≤ 10 s
24
65
Maximum Junction-to-Ambienta
Steady State
Steady State
52
°C/W
RthJC
Maximum Junction-to-Case (Drain)
1.5
1.8
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71627
S09-0268-Rev. E, 16-Feb-09
www.vishay.com
1
Si7852DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
2.0
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
100
1
nA
VDS = 80 V, VGS = 0 V
DS = 80 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Currenta
50
VGS = 10 V, ID = 10 A
0.0135
0.0175
25
0.0165
0.022
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = 6.0 V, ID = 8.0 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 10 A
IS = 2.8 A, VGS = 0 V
S
V
VSD
0.75
1.1
41
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
34
7.5
11.0
0.6
17
V
DS = 40 V, VGS = 10 V, ID = 10 A
nC
0.1
1
Ω
td(on)
tr
td(off)
tf
25
17
60
45
75
11
V
DD = 40 V, RL = 40 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
40
ns
31
trr
IF = 2.8 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
45
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 10 V thru 6 V
5 V
T
= 125 °C
C
25 °C
3
- 55 °C
5
3 V, 4 V
0
1
2
4
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71627
S09-0268-Rev. E, 16-Feb-09
Si7852DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3000
2500
2000
1500
1000
500
0.04
0.03
C
iss
V
GS
= 6 V
0.02
0.01
0.00
V
GS
= 10 V
C
rss
C
oss
0
0
20
40
60
80
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
V
I
= 10 V
V
I
= 40 V
GS
DS
= 10 A
= 10 A
D
D
4
0
- 50 - 25
0
25
50
75
100 125 150
0
15
30
45
60
T
J
- Junction Temperature (°C)
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.08
0.06
0.04
0.02
0.00
T
= 150 °C
J
I
D
= 10 A
1
T
= 25 °C
J
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71627
S09-0268-Rev. E, 16-Feb-09
www.vishay.com
3
Si7852DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
100
10
0.5
I
D
= 250 µA
T = 25 °C
0.0
- 0.5
- 1.0
- 1.5
T = 125 °C
1
0.1
10
- 50 - 25
0
25
50
75
100 125 150
-5
-4
-3
-2
-1
10
10
10
10
1
10
T
- Temperature (°C)
J
Time (s)
Avalanche Current vs. Time
Threshold Voltage
100
80
60
40
20
0
0.1
0.001
0.01
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1 .Duty Cycle, D =
0.02
2. Per Unit Base = R
= 52 °C/W
thJA
(t)
3 . T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71627
S09-0268-Rev. E, 16-Feb-09
Si7852DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71627.
Document Number: 71627
S09-0268-Rev. E, 16-Feb-09
www.vishay.com
5
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
MIN.
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A
0.97
A1
-
-
b
0.33
0.23
5.05
4.80
3.56
1.32
0.41
0.013
0.009
0.199
0.189
0.140
0.052
0.016
c
0.28
0.011
D
5.15
0.203
D1
4.90
0.193
D2
3.76
0.148
D3
1.50
0.059
D4
0.57 typ.
3.98 typ.
6.15
0.0225 typ.
0.157 typ.
0.242
D5
E
6.05
5.79
3.30
3.48
3.68
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.246
0.236
0.144
0.151
0.154
E1
5.89
0.232
E2 (for AL product)
3.48
0.137
E2 (for other product)
3.66
0.144
E3
3.78
0.149
E4 (for AL product)
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
-
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
-
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
H
0.56
0.51
0.51
0.06
0°
-
0.022
0.020
0.020
0.002
0°
-
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
Document Number: 71655
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.024
(0.61)
0.026
(0.66)
0.050
(1.27)
0.032
(0.82)
0.040
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
SI7852DP-T1-GE3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7856ADP-T1 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 获取价格 |
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| SI7856ADP-T1-E3 | VISHAY | TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| SI7856ADP-T1-GE3 | VISHAY | TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
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| SI7856DP | VISHAY | N-Channel 30-V (D-S) MOSFET | 获取价格 |
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| SI7856DP-E3 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
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| SI7856DP-T1 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
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| Si7858ADP | VISHAY | N-Channel 12-V (D-S) MOSFET | 获取价格 |
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| SI7858ADP-T1-E3 | VISHAY | TRANSISTOR 20 A, 12 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
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| SI7858ADP-T1-GE3 | VISHAY | TRANSISTOR 20 A, 12 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
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| SI7858BDP | VISHAY | N-Channel 12 V (D-S) MOSFET | 获取价格 |
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