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SI7856DP

更新时间：2025-06-28 02:10:26
品牌：VISHAY
描述：N-Channel 30-V (D-S) MOSFET

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SI7856DP 概述

N-Channel 30-V (D-S) MOSFET N通道30 -V （D -S ）的MOSFET

SI7856DP 数据手册

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Si7856DP  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Optimized for “Low Side” Synchronous  
Rectifier Operation  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0045 @ V = 10 V  
25  
23  
GS  
30  
0.0055 @ V = 4.5 V  
GS  
APPLICATIONS  
D DC/DC Converters  
D Synchronous Rectifiers  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
S
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
25  
19  
14  
11  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
60  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.5  
5.4  
3.4  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
50  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
1
Si7856DP  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
1.95  
3.0  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
5
DS  
GS  
J
a
On-State Drain Current  
I
30  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0035  
0.0045  
0.0055  
V
= 10 V, I = 25 A  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 19 A  
0.0043  
95  
GS  
DS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 25 A  
S
V
D
a
Diode Forward Voltage  
V
I
S
= 2.9 A, V = 0 V  
0.72  
1.1  
50  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
34  
15  
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 25 A  
nC  
DS  
GS  
D
10  
R
G
1.3  
21  
W
t
t
35  
25  
d(on)  
t
r
15  
V
= 15 V, R = 15 W  
L
= 10 V, R = 6 W  
GEN G  
DD  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
100  
30  
150  
45  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.9 A, di/dt = 100 A/ms  
50  
80  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
60  
60  
50  
40  
30  
20  
10  
0
V
= 10 thru 4 V  
GS  
50  
40  
30  
20  
10  
0
3 V  
T
C
= 125_C  
25_C  
–55_C  
0
1
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
2
Si7856DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.010  
7000  
5600  
4200  
2800  
1400  
0
C
iss  
0.008  
0.006  
V
= 4.5 V  
GS  
0.004  
0.002  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
0
6
12  
18  
24  
30  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15 V  
= 20 A  
V
= 10 V  
GS  
DS  
I
D
I = 20 A  
D
0
10  
20  
30  
40  
50  
–50 –25  
0
25  
50  
75  
100 125 150  
T – Junction Temperature (_C)  
J
Q
g
– Total Gate Charge (nC)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.020  
0.016  
0.012  
0.008  
0.004  
0.000  
50  
T
J
= 150_C  
I
D
= 20 A  
10  
T
J
= 25_C  
1
0.00  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
– Source-to-Drain Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
3
Si7856DP  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.6  
200  
160  
I
D
= 250 mA  
0.4  
0.2  
120  
80  
–0.0  
–0.2  
–0.4  
–0.6  
–0.8  
40  
0
–50 –25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T – Temperature (_C)  
J
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
Z
3. T – T = P  
DM thJA  
JM  
A
Single Pulse  
10  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
Single Pulse  
0.02  
0.05  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71850  
S-20351—Rev. A, 18-Apr-02  
www.vishay.com  
4

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