概述
数据手册SI7856DP 概述
N-Channel 30-V (D-S) MOSFET N通道30 -V （D -S ）的MOSFET
SI7856DP 数据手册
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Vishay Siliconix
New Product
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D Optimized for “Low Side” Synchronous
Rectifier Operation
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
0.0045 @ V = 10 V
25
23
GS
30
0.0055 @ V = 4.5 V
GS
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
PowerPAKt SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
S
5
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
25
19
14
11
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)
I
60
DM
a
Continuous Source Current (Diode Conduction)
I
4.5
5.4
3.4
1.6
1.9
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
18
50
23
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.0
1.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71850
S-20351—Rev. A, 18-Apr-02
www.vishay.com
1
Si7856DP
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
1.95
3.0
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
5
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0035
0.0045
0.0055
V
= 10 V, I = 25 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 19 A
0.0043
95
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 25 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 2.9 A, V = 0 V
0.72
1.1
50
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
g
34
15
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 25 A
nC
DS
GS
D
10
R
G
1.3
21
W
t
t
35
25
d(on)
t
r
15
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
100
30
150
45
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
40
30
20
10
0
V
= 10 thru 4 V
GS
50
40
30
20
10
0
3 V
T
C
= 125_C
25_C
–55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Document Number: 71850
S-20351—Rev. A, 18-Apr-02
www.vishay.com
2
Si7856DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
7000
5600
4200
2800
1400
0
C
iss
0.008
0.006
V
= 4.5 V
GS
0.004
0.002
0.000
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 20 A
V
= 10 V
GS
DS
I
D
I = 20 A
D
0
10
20
30
40
50
–50 –25
0
25
50
75
100 125 150
T – Junction Temperature (_C)
J
Q
g
– Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
0.004
0.000
50
T
J
= 150_C
I
D
= 20 A
10
T
J
= 25_C
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Document Number: 71850
S-20351—Rev. A, 18-Apr-02
www.vishay.com
3
Si7856DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
200
160
I
D
= 250 mA
0.4
0.2
120
80
–0.0
–0.2
–0.4
–0.6
–0.8
40
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T – Temperature (_C)
J
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 50_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
10
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.02
0.05
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71850
S-20351—Rev. A, 18-Apr-02
www.vishay.com
4
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| SI7858DP-E3 | VISHAY | TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
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