概述
数据手册SI7962DP 概述
Dual N-Channel 40-V (D-S) MOSFET 双N通道40 -V （D -S ）的MOSFET
SI7962DP 数据手册
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PDF下载Si7962DP
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
ꢀ
T
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F
E
T
ꢁ
P
o
w
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M
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F
E
T
VDS (V)
rDS(on)
(
ꢀ
)
ID (A)
Qg(Typ)
ꢀ New Low Thermal Resistance PowerPAK
ꢀ Dual MOSFET for Space Savings
ꢀ 100% Rg Tested
ꢁ
Package
40
0.017 @ V = 10 V
GS
11.1
46.2
ꢀ
H
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T
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s
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V
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t
a
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A
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H
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T
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m
p
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r
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u
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PowerPAK SO-8
D
1
D
2
S1
5.15 mm
6.15 mm
1
G1
2
S2
3
G2
4
G
1
G
2
D1
8
D1
7
D2
6
D2
S
S
2
1
5
N-Channel MOSFET
N-Channel MOSFET
Bottom View
Ordering Information: Si7962DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
40
DS
GS
V
V
"20
T
= 25ꢂC
= 70ꢂC
11.1
8.9
7.1
5.7
A
a
Continuous Drain Current (T = 150ꢂC)
I
D
J
T
A
Pulsed Drain Current
I
40
A
DM
a
Continuous Source Current (Diode Conduction)
I
S
2.9
1.2
Single Avalanche Current
L = 0.1 mH
I
30
45
AS
Single Avalanche Energy
E
mJ
AS
T
= 25ꢂC
= 70ꢂC
3.5
2.2
1.4
0.9
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
−55 to 150
ꢂ
C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
26
60
35
85
a
Maximum Junction-to-Ambient
R
R
thJA
ꢂ
C
/
W
Maximum Junction-to-Case (Drain)
2.2
2.7
thJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
www.vishay.com
1
Si7962DP
Vishay Siliconix
SPECIFICATIONS (T = 25ꢂ C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 ꢁA
3.4
4.5
V
GS(th)
DS
GS D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= 40 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
ꢁA
DSS
V
= 40 V, V = 0 V, T = 55ꢂC
GS J
DS
a
On-State Drain Current
I
30
A
V
V
w 5 V, V = 10 V
D(on)
DS
GS
a
Drain-Source On-State Resistance
r
0.0135
0.017
1.2
ꢀ
= 10 V, I = 11.1 A
D
DS(on)
GS
a
Forward Transconductance
g
fs
V
= 15 V, I = 11.1 A
31
S
V
DS
D
a
Diode Forward Voltage
V
I
= 2.9 A, V = 0 V
0.8
SD
S
GS
Dynamicb
Total Gate Charge
Q
g
46.2
70
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Q
Q
V
= 20 V, V = 10 V, I = 11.1 A
16
9.6
2.3
22
15
55
15
35
nC
gs
DS
GS
D
gd
f = 1 MHz
R
1.1
3.5
35
25
70
25
60
ꢀ
g
t
d(on)
t
r
V
= 20 V, R = 20 ꢀ
L
GEN g
DD
^ 1 A, V
I
D
= 10 V, R = 6 ꢀ
Turn-Off Delay Time
Fall Time
t
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 2.9 A, di/dt = 100 A/ꢁs
F
Notes
a. Pulse test; pulse width v 300 ꢁs, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
32
24
16
8
40
32
24
16
8
V
= 10 thru 7 V
GS
6 V
T
C
= 125ꢂC
25ꢂC
5 V
−55ꢂC
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
www.vishay.com
2
Si7962DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
4000
3200
2400
1600
800
C
iss
0.015
0.010
0.005
0.000
V
= 10 V
GS
C
oss
C
rss
0
0
5
10
15
20
25
30
35
40
0
8
16
24
32
40
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 20 V
V
D
= 10 V
GS
DS
I
= 11.1 A
I = 11.1 A
6
4
2
0
0
10
Q
20
30
40
50
−50 −25
0
25
50
75
100 125 150
− Total Gate Charge (nC)
T
J
− Junction Temperature (ꢂC)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
40
10
T = 150ꢂC
J
T = 25ꢂC
J
I = 11.1 A
D
1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
SD
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
www.vishay.com
3
Si7962DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
100
80
0.4
I
D
= 250 ꢁA
−0.0
−0.4
−0.8
−1.2
−1.6
60
40
20
0
−50 −25
0
25
50
75
100 125 150
0.001
0.01
0.1
10
100
600
1
T
J
− Temperature (ꢂC)
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
I
Limited
*r
DS(on)
Limited
DM
P(t) = 0.0001
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
T
= 25ꢂC
A
0.1
Single Pulse
P(t) = 10
dc
BV
Limited
10
DSS
0.01
0.1
1
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
GS
GS
DS(on)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 60ꢂ C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
www.vishay.com
4
Si7962DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72914.
Document Number: 72914
S-42058—Rev. B, 15-Nov-04
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
SI7962DP 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SI7962DP-T1-E3 | VISHAY | Trans MOSFET N-CH 40V 7.1A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7962DP-T1-GE3 | VISHAY | TRANSISTOR 7100 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Small Signal | 获取价格 |
|
| SI7964DP-T1-E3 | VISHAY | Trans MOSFET N-CH 60V 6.1A 8-Pin PowerPAK SO T/R | 获取价格 |
|
| SI7964DP-T1-GE3 | VISHAY | DUAL N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel | 获取价格 |
|
| SI7970DP | VISHAY | Dual N-Channel 40-V (D-S) MOSFET | 获取价格 |
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| SI7970DP-T1-E3 | VISHAY | Dual N-Channel 40-V (D-S) MOSFET | 获取价格 |
|
| SI7971DP | VISHAY | Dual P-Channel 12-V (D-S) MOSFET | 获取价格 |
|
| SI7971DP-T1-E3 | VISHAY | TRANSISTOR 7.5 A, 12 V, 0.018 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power | 获取价格 |
|
| Si7972DP | VISHAY | Dual N-Channel 60 V (D-S) MOSFET | 获取价格 |
|
| SI7973DP-T1 | VISHAY | TRANSISTOR 8.2 A, 12 V, 0.015 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
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