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SI7962DP

更新时间：2025-07-05 07:53:41
品牌：VISHAY
描述：Dual N-Channel 40-V (D-S) MOSFET

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SI7962DP 概述

Dual N-Channel 40-V (D-S) MOSFET 双N通道40 -V （D -S ）的MOSFET

SI7962DP 数据手册

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Si7962DP  
Vishay Siliconix  
Dual N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
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VDS (V)  
rDS(on)  
(
ꢀ
)
ID (A)  
Qg(Typ)  
ꢀ New Low Thermal Resistance PowerPAK  
ꢀ Dual MOSFET for Space Savings  
ꢀ 100% Rg Tested  
ꢁ
Package  
40  
0.017 @ V = 10 V  
GS  
11.1  
46.2  
ꢀ
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A
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PowerPAK SO-8  
D
1
D
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
3
G2  
4
G
1
G
2
D1  
8
D1  
7
D2  
6
D2  
S
S
2
1
5
N-Channel MOSFET  
N-Channel MOSFET  
Bottom View  
Ordering Information: Si7962DP-T1—E3  
ABSOLUTE MAXIMUM RATINGS (T = 25ꢂ C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
DS  
GS  
V
V
"20  
T
= 25ꢂC  
= 70ꢂC  
11.1  
8.9  
7.1  
5.7  
A
a
Continuous Drain Current (T = 150ꢂC)  
I
D
J
T
A
Pulsed Drain Current  
I
40  
A
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2.9  
1.2  
Single Avalanche Current  
L = 0.1 mH  
I
30  
45  
AS  
Single Avalanche Energy  
E
mJ  
AS  
T
= 25ꢂC  
= 70ꢂC  
3.5  
2.2  
1.4  
0.9  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
ꢂ
C
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
26  
60  
35  
85  
a
Maximum Junction-to-Ambient  
R
R
thJA  
ꢂ
C
/
W
Maximum Junction-to-Case (Drain)  
2.2  
2.7  
thJC  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72914  
S-42058—Rev. B, 15-Nov-04  
www.vishay.com  
1
Si7962DP  
Vishay Siliconix  
SPECIFICATIONS (T = 25ꢂ C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 ꢁA  
3.4  
4.5  
V
GS(th)  
DS  
GS D  
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
= 40 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
ꢁA  
DSS  
V
= 40 V, V = 0 V, T = 55ꢂC  
GS J  
DS  
a
On-State Drain Current  
I
30  
A
V
V
w 5 V, V = 10 V  
D(on)  
DS  
GS  
a
Drain-Source On-State Resistance  
r
0.0135  
0.017  
1.2  
ꢀ
= 10 V, I = 11.1 A  
D
DS(on)  
GS  
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 11.1 A  
31  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
= 2.9 A, V = 0 V  
0.8  
SD  
S
GS  
Dynamicb  
Total Gate Charge  
Q
g
46.2  
70  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resostamce  
Turn-On Delay Time  
Rise Time  
Q
Q
V
= 20 V, V = 10 V, I = 11.1 A  
16  
9.6  
2.3  
22  
15  
55  
15  
35  
nC  
gs  
DS  
GS  
D
gd  
f = 1 MHz  
R
1.1  
3.5  
35  
25  
70  
25  
60  
ꢀ
g
t
d(on)  
t
r
V
= 20 V, R = 20 ꢀ  
L
GEN g  
DD  
^ 1 A, V  
I
D
= 10 V, R = 6 ꢀ  
Turn-Off Delay Time  
Fall Time  
t
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.9 A, di/dt = 100 A/ꢁs  
F
Notes  
a. Pulse test; pulse width v 300 ꢁs, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
32  
24  
16  
8
40  
32  
24  
16  
8
V
= 10 thru 7 V  
GS  
6 V  
T
C
= 125ꢂC  
25ꢂC  
5 V  
−55ꢂC  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 72914  
S-42058—Rev. B, 15-Nov-04  
www.vishay.com  
2
Si7962DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.020  
4000  
3200  
2400  
1600  
800  
C
iss  
0.015  
0.010  
0.005  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
8
16  
24  
32  
40  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 20 V  
V
D
= 10 V  
GS  
DS  
I
= 11.1 A  
I = 11.1 A  
6
4
2
0
0
10  
Q
20  
30  
40  
50  
−50 −25  
0
25  
50  
75  
100 125 150  
− Total Gate Charge (nC)  
T
J
− Junction Temperature (ꢂC)  
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
40  
10  
T = 150ꢂC  
J
T = 25ꢂC  
J
I = 11.1 A  
D
1
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
0
2
4
6
8
10  
V
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
SD  
Document Number: 72914  
S-42058—Rev. B, 15-Nov-04  
www.vishay.com  
3
Si7962DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
0.8  
100  
80  
0.4  
I
D
= 250 ꢁA  
−0.0  
−0.4  
−0.8  
−1.2  
−1.6  
60  
40  
20  
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
10  
100  
600  
1
T
J
− Temperature (ꢂC)  
Time (sec)  
Safe Operating Area, Junction-To-Ambient  
100  
I
Limited  
*r  
DS(on)  
Limited  
DM  
P(t) = 0.0001  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
T
= 25ꢂC  
A
0.1  
Single Pulse  
P(t) = 10  
dc  
BV  
Limited  
10  
DSS  
0.01  
0.1  
1
100  
V
− Drain-to-Source Voltage (V)  
DS  
*V u minimum V at which r is specified  
GS  
GS  
DS(on)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 60ꢂ C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72914  
S-42058—Rev. B, 15-Nov-04  
www.vishay.com  
4
Si7962DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25ꢂ C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and  
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see  
http://www.vishay.com/ppg?72914.  
Document Number: 72914  
S-42058—Rev. B, 15-Nov-04  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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