您的位置:首页 > 晶体管 > IGBT
IGBT
图片 型号 文档 类别 描述 品牌 供应商
2MBI300NB-060-01D IGBT Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,
2MBI300S-120 IGBT 1200V / 300A 2 in one-package
1200V / 300A 2中的一个包
2MBI300SC-120 IGBT Insulated Gate Bipolar Transistor,
2MBI300TA-060 IGBT IGBT Module
IGBT模块
2MBI300U2B-060 IGBT IGBT Module U-Series
IGBT模块U系列
2MBI300U4D-120 IGBT IGBT MODULE
IGBT模块
2MBI300U4E-120 IGBT IGBT MODULE
IGBT模块
2MBI300U4H-170 IGBT IGBT MODULE
IGBT模块
2MBI300U4J-120-50 IGBT IGBT Module
IGBT模块
2MBI300U4N-170-50 IGBT IGBT MODULE
IGBT模块
2MBI300UB-060 IGBT Insulated Gate Bipolar Transistor,
2MBI300UC-120 IGBT IGBT MODULE
IGBT模块
2MBI300VB-060-50 IGBT IGBT MODULE (V series) 600V / 300A / 2 in one package
IGBT模块( V系列) 600V / 300A / 2在一个封装
2MBI300VD-120-50 IGBT IGBT MODULE (V series) 1200V / 300A / 2 in one package
IGBT模块( V系列) 1200V / 300A / 2在一个封装
2MBI300VE-170-50 IGBT Insulated Gate Bipolar Transistor
2MBI300VH-120-50 IGBT IGBT MODULE (V series) 1200V / 300A / 2 in one package
IGBT模块( V系列) 1200V / 300A / 2在一个封装
2MBI300VH-170-50 IGBT Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, M276, 7 PIN
2MBI300VJ-120-50 IGBT IGBT MODULE
IGBT模块
2MBI300VN-120-50 IGBT IGBT MODULE
IGBT模块
2MBI300VX-120-50 IGBT 2-Pack(2 in 1) M282
2MBI300VX-170-50 IGBT 2-Pack(2 in 1) M282
2MBI400N-060-01 IGBT IGBT(600V / 400A)
IGBT ( 600V / 400A )
2MBI400N-060-01A IGBT Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
2MBI400N-060-01C IGBT Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
2MBI400N-060-01D IGBT Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7
2MBI400N-060-01F IGBT Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
2MBI400NT-060-02 IGBT IGBT module
IGBT模块
2MBI400TB-060 IGBT IGBT Module
IGBT模块
2MBI400U2B-060 IGBT IGBT Module
IGBT模块
2MBI400U4H-120 IGBT Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Total:600156789101112131415...20
总600条记录,每页显示30条记录分20页显示。

什么是IGBT

    IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)是一种复合全控型电压驱动式功率半导体器件,由双极型三极管(BJT)和绝缘栅型场效应管(MOS)组成。‌ 它结合了MOSFET的高输入阻抗和电力晶体管(GTR)的低导通压降的优点,具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统,如交流电机、变频器、开关电源、照明电路、牵引传动等领域。