IGBT
分类:
其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
10-EZ12PMA015M7-L928A78T | IGBT | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized | |||||
10-EZ12PNA010M7-L927C78T | IGBT | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized | |||||
10-F0062PA100SA-P994F09 | IGBT | Insulated Gate Bipolar Transistor | |||||
10-F0062PA150SA01-P995F19 | IGBT | Insulated Gate Bipolar Transistor | |||||
10-F0062PA200SA01-P996F19 | IGBT | Insulated Gate Bipolar Transistor | |||||
10-F0122PA150SC-P990F09 | IGBT | Insulated Gate Bipolar Transistor | |||||
10-FZ062PA100SA-P994F08 | IGBT | Insulated Gate Bipolar Transistor | |||||
10-FZ062PA200SA01-P996F18 | IGBT | Insulated Gate Bipolar Transistor | |||||
10-FZ122PA150SC-P990F08 | IGBT | Insulated Gate Bipolar Transistor | |||||
1201140083 | IGBT | Micro-Change Molded Junction Box, Top Mount, 8 Ports, 2(IO) per port, LEDs for PNP sensors, with Integral 微变模塑接线盒,顶部安装, 8个端口, 2 ( IO )每个端口, LED用于PN |
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12MBI50VN-120-50 | IGBT | Insulated Gate Bipolar Transistor | |||||
12MBI50VX-120-50 | IGBT | M1202 | |||||
132GH120-212CTVF | IGBT | Insulated Gate Bipolar Transistor, | |||||
132GH120-212CTVU | IGBT | Insulated Gate Bipolar Transistor, | |||||
1602GB061-459CTVF | IGBT | Insulated Gate Bipolar Transistor, | |||||
1602GB061-459CTVU | IGBT | Insulated Gate Bipolar Transistor, | |||||
1MB03D-120 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB05-120 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB05D-120 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB10-120 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB10D-120 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB12-140 | IGBT | INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管 |
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1MB15D-060 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB20-060 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB20D-060 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MB30-060 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBA10-090 | IGBT | Insulated Gate Bipolar Transistor | |||||
1MBC03-120 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBC05-060 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBC05D-060 | IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
IGBT 热门型号
- SSG55N60/3
- SSG60N60P
- APT50GN60SDQ3
- APT50GN60SDQ3(G)
- VS-GA200SA60U
- VUB160-16NO2T
- VUB160-16NO2TL
- VUB160-12NO2TL
- VUB120-12NO2L
- VS-GA200SA60SP
- STGFL6NC60DI
- STGD18N40LZT4TRL
- STGW35HF60WDI
- STGB8NC60KTRL
- STGW45HF60WD
- STGD8NC60KTRL
- SSG55N60NTXV
- SSG60N60NS
- SPMQ613-02S
- SKW20N60HSXK
- SKP15N60XK
- SKM200GB12T4D
- SKW07N120XK
- SKW15N120XK
- SKP04N60XK
- SKW20N60FK
- SKP02N120XK
- SKM200GB12T4SIC
- SKIM300GD126DL
- SKIIP312GDL120-404WTE
- SKB15N60HSAT
- SK30GD066ETP
- SKB15N60XT
- SIGC158T170R3E
- SK25GD12T4ETP
- SIGC10T60SE
- SIGC101T170R3E
- SIGC41T120R3LE
- SIGC06T60GSE
- SIGC128T170R3E
- SIGC03T60SN
- SIGC04T60GSE
- SIGC20T120E
- SIGC32T120R3E
- SIGC12T60N
- SGD02N60XT
- SGP5N60RUFTU
- SGR15N40LTF
- SGH10N60RUFDTU
- SGR6N60UFTF_NL
- SGL60N90DG3TU_NL
- SGH10N60RUFTU
- SGP6N60UFTU
- SGP40N60UFTU
- SGL160N60UFDTU_NL
- SGP15N60XK
- SGU20N40LTU_NL
- SGW20N60XK
- SGS10N60RUFTU
- SGH5N120RUFTU
- SGP6N60UFDTU
- SGP20N60RUFTU
- SGP13N60UFDTU
- SGS5N60RUFDTU
- SGU20N40LTU
- SGL50N60RUFDGTU
- SGH30N60RUFDTU
- SGL160N60UFDTU
- SGH15N120RUFDTU
- PDMB150A6C
- MUBW15-06A6K
- MM118-12T
- MM118-06FT
- MM118-12L
- MM118-12FT
- MKI75-06A7T
- MIG10J503H
- MGW12N120E
- MGP15N35CLG
- MGP11N60DE
- MBN400GS12BW
- IXBH40N160A
- IXBT16N170AHV
- IXGP20N120B
- IXBF9N140G
- IXGT72N60A3-TRL
- IXSN80N60B
- ISL9V2040D3S_NL
- ISL9V2540S3ST_NL
- IRGVH50FUPBF
- IRGSL6B60KDPBF
- IRGBC20K-STRRPBF
- IRG4RC10KTRL
- IRGPC30KD2-E
- IRGMC40UDPBF
- IRGMC40FDPBF
- IRGBC20M-STRR
- IRGS6B60KDTRLPBF
- IRGBC30MD2-STRL
- IRGBC30KD2-STRL
什么是IGBT
- IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)是一种复合全控型电压驱动式功率半导体器件,由双极型三极管(BJT)和绝缘栅型场效应管(MOS)组成。 它结合了MOSFET的高输入阻抗和电力晶体管(GTR)的低导通压降的优点,具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统,如交流电机、变频器、开关电源、照明电路、牵引传动等领域。