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IGBT
图片 型号 文档 类别 描述 品牌 供应商
10-EZ12PMA015M7-L928A78T IGBT Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized
10-EZ12PNA010M7-L927C78T IGBT Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized
10-F0062PA100SA-P994F09 IGBT Insulated Gate Bipolar Transistor
10-F0062PA150SA01-P995F19 IGBT Insulated Gate Bipolar Transistor
10-F0062PA200SA01-P996F19 IGBT Insulated Gate Bipolar Transistor
10-F0122PA150SC-P990F09 IGBT Insulated Gate Bipolar Transistor
10-FZ062PA100SA-P994F08 IGBT Insulated Gate Bipolar Transistor
10-FZ062PA200SA01-P996F18 IGBT Insulated Gate Bipolar Transistor
10-FZ122PA150SC-P990F08 IGBT Insulated Gate Bipolar Transistor
1201140083 IGBT Micro-Change Molded Junction Box, Top Mount, 8 Ports, 2(IO) per port, LEDs for PNP sensors, with Integral
微变模塑接线盒,顶部安装, 8个端口, 2 ( IO )每个端口, LED用于PN
12MBI50VN-120-50 IGBT Insulated Gate Bipolar Transistor
12MBI50VX-120-50 IGBT M1202
132GH120-212CTVF IGBT Insulated Gate Bipolar Transistor,
132GH120-212CTVU IGBT Insulated Gate Bipolar Transistor,
1602GB061-459CTVF IGBT Insulated Gate Bipolar Transistor,
1602GB061-459CTVU IGBT Insulated Gate Bipolar Transistor,
1MB03D-120 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB05-120 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB05D-120 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB10-120 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB10D-120 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB12-140 IGBT INSULATED GATE BIPOLAR TRANSISTOR
绝缘栅双极晶体管
1MB15D-060 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB20-060 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB20D-060 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MB30-060 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MBA10-090 IGBT Insulated Gate Bipolar Transistor
1MBC03-120 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MBC05-060 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
1MBC05D-060 IGBT Fuji Discrete Package IGBT
富士分立IGBT封装
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什么是IGBT

    IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)是一种复合全控型电压驱动式功率半导体器件,由双极型三极管(BJT)和绝缘栅型场效应管(MOS)组成。‌ 它结合了MOSFET的高输入阻抗和电力晶体管(GTR)的低导通压降的优点,具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统,如交流电机、变频器、开关电源、照明电路、牵引传动等领域。