IGBT
分类：
其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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| 图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
| 2MBI200VH-170-50 |  |
IGBT | 2-Pack(2 in 1) M276 |  |
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2MBI225U4J-120-50 | |
IGBT | IGBT Module IGBT模块 |
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2MBI225U4N-120-50 | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11 | |
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2MBI225U4N-170-50 | |
IGBT | IGBT MODULE IGBT模块 |
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2MBI225VJ-120-50 | |
IGBT | IGBT MODULE IGBT模块 |
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2MBI225VN-120-50 | |
IGBT | IGBT MODULE IGBT模块 |
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| 2MBI225VN-120S-50 | |
IGBT | Insulated Gate Bipolar Transistor | |
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| 2MBI225VX-120-50 | |
IGBT | Insulated Gate Bipolar Transistor | |
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| 2MBI225VX-170-50 | |
IGBT | 2-Pack(2 in 1) M282 | |
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| 2MBI25F-120 | |
IGBT | IGBT MODULE(L series) IGBT模块（L系列） |
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| 2MBI300F-060 | |
IGBT | IGBT MODULE(F series) IGBT模块（ F系列） |
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| 2MBI300HJ-120-50 | |
IGBT | 2-Pack(2 in 1) | |
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| 2MBI300L-060 | |
IGBT | IGBT MODULE(L series) IGBT模块（L系列） |
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| 2MBI300LB-060 | |
IGBT | IGBT MODULE(L series) IGBT模块（L系列） |
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2MBI300N-060 | |
IGBT | 600V / 300A 2 in one-package 600V / 300A 2中的一个包 |
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2MBI300N-060-04 | |
IGBT | 600V / 300A 2 in one-package 600V / 300A 2中的一个包 |
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2MBI300N-060-04A | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-060-04C | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-060-04D | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-120 | |
IGBT | 1200V 300A 2-Pack IGBT 1200V 300A 2件组IGBT |
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2MBI300N-120-01 | |
IGBT | 1200V / 300A 2 in one-package 1200V / 300A 2中的一个包 |
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2MBI300N-120-01A | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-120-01B | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-120-01C | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-120-01D | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-120-01E | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300N-120-01F | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | |
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2MBI300NB-060 | |
IGBT | 600V/300A 2-Pack IGBT 600V / 300A 2件组IGBT |
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2MBI300NB-060-01 | |
IGBT | 600V / 300A 2 in one-package 600V / 300A 2中的一个包 |
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2MBI300NB-060-01B | |
IGBT | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | |
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IGBT 热门型号
- FS25R12W1T4_B11
- FS20R06W1E3_B11
- FS20R06W1E3
- FS200R12PT4
- FS200R12KT4R_B11
- FS200R07A1E3
- FS150R17PE4
- FS150R12PT4
- FS150R12KT4_B9
- FS100R12KT4_B11
- FS100R12KT4G
- FS100R12KT4
- FP75R12KT4_B11
- FP75R12KT4
- FP50R12KT4G
- FP50R12KT4
- FP50R06W2E3_B11
- FP40R12KE3
- FP35R12W2T4_B11
- FP35R12KT4_B11
- FP30R06W1E3_B11
- FP25R12KT4_B15
- FP25R12KT4
- FP20R06W1E3_B11
- FP20R06W1E3
- FP20R06KL4
- FP15R12W1T4_B11
- FP15R06W1E3
- FP15R06KL4
- FP10R12W1T4_B3
- FP10R12W1T4_B11
- FP10R06W1E3_B11
- FP10R06W1E3
- FP10R06KL4
- FP100R12KT4_B11
- FP100R12KT4
- FZ800R12KE3
- FZ750R65KE3T
- FZ750R65KE3
- FZ600R65KF2
- FZ600R65KE3
- FZ600R17KE3
- FZ500R65KE3T
- FZ500R65KE3
- FZ400R65KF2
- FZ400R12KS4
- FZ3600R12KE3
- PBMB200A6
- PBMB50E6
- PCHMB150A6
- PCHMB150A6A
- PCHMB200A6
- PCHMB200A6A
- PCHMB200B12
- PCHMB300A6
- PCHMB300A6A
- PCHMB300A6AC
- PCHMB300A6C
- PCHMB400A6A
- PCHMB400B12
- PDMB150A6
- PDMB150B12
- PDMB150B12C
- PDMB150E6
- PDMB150E6C
- PDMB200A6C
- PDMB200B12C2
- PDMB300A6
- PDMB300A6C
- PDMB300B12
- PDMB300B12C
- PDMB50B12
- PHMB600B12
- PHMB600B12C
- PRFMB600E6
- PRFMB600E6C
- PRHMB100A6
- PRHMB100A6A
- PRHMB200A6
- PRHMB200B12
- PRHMB200B12A
- PRHMB300A6A
- PRHMB300A6AC
- PRHMB300B12
- PRHMB300B12A
- PRHMB400B12A
- PRHMB75B12
- PRHMB75B12A
- DDB6U75N16W1R_B11
- PTMB50A6
- PTMB75A6
- PVD55-12
- PVD55-6
- PVD75-6
- RJH60F0DPK-00-T0
- CT20TM-8
- CPV364M4UPBF
- CPV362M4UPBF
- CPV362M4F
- SEMIX101GD12VS
什么是IGBT
- IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）是一种复合全控型电压驱动式功率半导体器件，由双极型三极管（BJT）和绝缘栅型场效应管（MOS）组成。 它结合了MOSFET的高输入阻抗和电力晶体管（GTR）的低导通压降的优点，具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。