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IGBT
图片 型号 文档 类别 描述 品牌 供应商
2MBI600VG-120P IGBT Insulated Gate Bipolar Transistor
2MBI600VJ-120-50 IGBT IGBT MODULE
IGBT模块
2MBI600VN-120-50 IGBT IGBT MODULE
IGBT模块
2MBI600VXA-120E-50 IGBT IGBT MODULE (V series) 1200V / 600A / 2 in one package
IGBT模块( V系列) 1200V / 600A / 2在一个封装
2MBI75-140 IGBT Insulated Gate Bipolar Transistor,
2MBI75F-060 IGBT IGBT(600V 75A)
IGBT ( 600V 75A )
2MBI75F-120 IGBT IGBT(1200V 75A)
IGBT ( 1200V 75A )
2MBI75L-120 IGBT IGBT(1200V 75A)
IGBT ( 1200V 75A )
2MBI75N-060 IGBT IGBT(600V 75A)
IGBT ( 600V 75A )
2MBI75N-120 IGBT IGBT(1200V 75A)
IGBT ( 1200V 75A )
2MBI75NB-060 IGBT Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,
2MBI75P-140 IGBT IGBT(1400V 75A)
IGBT ( 1400V 75A )
2MBI75S-120 IGBT IGBTs
IGBT的\n
2MBI75VA-120-50 IGBT IGBT MODULE (V series) 1200V / 75A / 2 in one package
IGBT模块( V系列) 1200V / 75A / 2在一个封装
2MBI75VA-170-50 IGBT 2-Pack(2 in 1) M263
2MBI800U4G-120 IGBT IGBT MODULE (U series) 1200V / 800A / 2 in one package
IGBT模块( U系列) 1200V / 800A / 2在一个封装
2MBI800U4G-170 IGBT IGBT MODULE
IGBT模块
2MBI800VG-120P IGBT Insulated Gate Bipolar Transistor
2MBI800VG-170E IGBT Insulated Gate Bipolar Transistor,
2MBI800VG-170E IGBT Insulated Gate Bipolar Transistor
2MBI800VT-170E IGBT Insulated Gate Bipolar Transistor
2PG001 IGBT Insulated Gate Bipolar Transistor, 30A I(C), 300V V(BR)CES, N-Channel, TO-220AB, TO-220F, 3 PIN
2PG002 IGBT Insulated Gate Bipolar Transistor, 40A I(C), 410V V(BR)CES, N-Channel, TO-220AB, TO-220F, 3 PIN
2PG006 IGBT Insulated Gate Bipolar Transistor, 40A I(C), 430V V(BR)CES, N-Channel, TO-220AB, TO-220D-A1, 3 PIN
2PG009 IGBT Insulated Gate Bipolar Transistor, 40A I(C), 510V V(BR)CES, N-Channel, TO-220AB, TO-220D-A1, 3 PIN
2PG011 IGBT Insulated Gate Bipolar Transistor, 40A I(C), 540V V(BR)CES, N-Channel, TO-220AB, TO-220D-A1, 3 PIN
2PG303 IGBT Insulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, U TYPE PACKAGE-3
2PG304 IGBT Insulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, I TYPE PACKAGE-3
2PG351 IGBT Insulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, IPAK-3
2PG353 IGBT Insulated Gate Bipolar Transistor, 5A I(C), 400V V(BR)CES, N-Channel, U TYPE PACKAGE-3
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总600条记录,每页显示30条记录分20页显示。

什么是IGBT

    IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)是一种复合全控型电压驱动式功率半导体器件,由双极型三极管(BJT)和绝缘栅型场效应管(MOS)组成。‌ 它结合了MOSFET的高输入阻抗和电力晶体管(GTR)的低导通压降的优点,具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统,如交流电机、变频器、开关电源、照明电路、牵引传动等领域。