功率双极晶体管
图片 型号 文档 类别 描述 品牌 供应商
11C-1 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, DIE-2
11C-2 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon, DIE-2
13003ADGP-T60-F-K 功率双极晶体管 Power Bipolar Transistor
13003BDGP-T60-F-K 功率双极晶体管 NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION
13005ECL-D-TM3-T 功率双极晶体管 Power Bipolar Transistor
180T2 功率双极晶体管 LF large signal power amplification
LF大信号功率放大
1DI200A-140 功率双极晶体管 Power Bipolar Transistor, 200A I(C), 1400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
1DI200Z-120 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI200ZP-120 功率双极晶体管 Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, M114, 5 PIN
1DI300A-120 功率双极晶体管 Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
1DI300D-100 功率双极晶体管 Power Bipolar Transistor, 300A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
1DI300M-120 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI300Z-120 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI300Z-140 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI30MA-050 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI400A-120 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI400D-100 功率双极晶体管 Power Bipolar Transistor, 400A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin
1DI400M-050 功率双极晶体管 Power Bipolar Transistor, 400A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, M109, 5 PIN
1DI400MP-120 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
1DI50MA-050 功率双极晶体管 Power Bipolar Transistor, 50A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2B940A 功率双极晶体管 Silicon PNP epitaxial planar type(For power amplification)
PNP硅外延平面型(适用于功率放大)
2B940AP 功率双极晶体管 Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3
2B940AQ 功率双极晶体管 Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3
2D175M-120 功率双极晶体管 Power Bipolar Transistor, 75A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin
2DB1182Q-13 功率双极晶体管 32V PNP SURFACE MOUNT TRANSISTOR IN TO252
32V PNP表面贴装晶体管TO252
2DB1184Q-13 功率双极晶体管 PNP SURFACE MOUNT TRANSISTOR
PNP表面贴装晶体管
2DI100A-120 功率双极晶体管 Power Bipolar Transistor, 100A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin
2DI100A-140 功率双极晶体管 Power Bipolar Transistor, 100A I(C), 1400V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin
2DI100D-050 功率双极晶体管 POWER TRANSISTOR MODULE
功率晶体管模块
2DI100D-100 功率双极晶体管 Power Bipolar Transistor, 100A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 11 Pin
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总600条记录,每页显示30条记录分20页显示。

什么是功率双极晶体管

    功率双极晶体管(Bipolar Junction Transistor,简称BJT),是一种基于半导体材料的电子元件。它可以被用作放大器、开关和其他电路中的信号处理部件。 功率双极晶体管中,集电区和发射区构成了一个PN结,而基区夹在这两者之间。当一个电压被施加在基区时,它能够控制PN结的电阻,从而控制电流流过晶体管。这个过程叫做“注入”(injection),并且它使得电流能够受到控制,从而使晶体管可以用作放大器或开关。