
图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
A416316BV-30L | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K ×16的CMOS动态RAM具有快速页面模式 |
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A416316BV-30LF | ![]() |
DRAM | Fast Page DRAM, 64KX16, 30ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A416316BV-35 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K ×16的CMOS动态RAM具有快速页面模式 |
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A416316BV-35F | ![]() |
DRAM | Fast Page DRAM, 64KX16, 35ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A416316BV-35L | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K ×16的CMOS动态RAM具有快速页面模式 |
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A416316BV-35LF | ![]() |
DRAM | Fast Page DRAM, 64KX16, 35ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A416316BV-40 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K ×16的CMOS动态RAM具有快速页面模式 |
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A416316BV-40F | ![]() |
DRAM | Fast Page DRAM, 64KX16, 40ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A416316BV-40L | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K ×16的CMOS动态RAM具有快速页面模式 |
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A416316BV-40LF | ![]() |
DRAM | Fast Page DRAM, 64KX16, 40ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A418316S-25 | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 256K ×16的CMOS动态的,快速页模式内存 |
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A418316V-25U | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 256K ×16的CMOS动态的,快速页模式内存 |
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A418316V-35U | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 256K ×16的CMOS动态的,快速页模式内存 |
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A426316BS-30 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BS-35 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BS-35L | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BS-40 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BS-40L | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BV-30 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BV-35 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BV-35L | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A426316BV-40 | ![]() |
DRAM | 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K ×16的CMOS动态RAM与EDO页模式 |
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A428316S-25 | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A428316S-35 | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A428316V-25U | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A428316V-35 | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A428316V-35F | ![]() |
DRAM | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A428316V-35U | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A428316V-35UF | ![]() |
DRAM | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A42L0616S-45 | ![]() |
DRAM | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 1M ×16的CMOS动态的, EDO页模式内存 |
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DRAM 热门型号
- W3EG6433S202BD4F
- W3EG64128S265D3S
- W3EG2128M72AFSR403AD3SG
- W3DG7268V7AD1I
- W3DG7232V10D1I
- W3EG64255S265JD3M
- W3DG6418V7AD1I-MG
- W3DG6418V75AD1I-S
- W3EG72256S335JD3SF
- W3EG72256S263JD3SG
- W3EG2128M64ETSR335JD3SF
- W3DG6432V7D2I
- W3DG7216V7AD1I
- W3DG648V10D1I
- W3EG6432S265D4F
- W3EG64128S262D3G
- W3DG7216V10AD1I
- W3DG64126V7D2G
- W3DG6318V7D2MG
- W3DG63126V75D2F
- W3DG6418V10AD1-M
- W3DG6433V75D1F
- W3DG6416V10D2I
- TMS418169P-80DGE
- TMS4116-25JDL
- TMS4116-15JDL
- TMS4256-15JL
- TMS416169P-60DGE
- TM248CBJ32U-60L
- TM124BBJ32U-70L
- TM124BBJ32F-60L
- TM124MBK36B-60L
- TM124BBJ32U-80L
- TM4EP64DPNDGC
- TM248GBK32S-70L
- TM248GBK32-60L
- TM124FBK32S-60L
- TM124BBJ32F-80L
- SMJ4C1024-10JDM
- SMJ4C1024-10HKM
- SMJ4C1024-12JDM
- SMJ4C1024-10FQM
- SMJ4C1024-80HKM
- SMJ4C1024-10HLMT
- SMJ4C1024-10HLM
- SMJ4C1024-10HJM
- MS82V48540-8TA
- MSM5117800F-70JS
- MSM514800A-80TS-K
- MSM514800C-70JS
- MSM5117800F-50TS-K
- MSM511666CL-60JS
- MSM51V4256A-70RS
- MSM51C464A-70JS
- MSM41256A-10JS
- MSM51V4256A-10JS
- MSM51V16165F-50JS
- MSM51V16405F-60SJ
- MSM51V16165F-70JS
- MSM514800ASL-10JS
- MSM51C464A-10JS
- MSM51V16165F-60JS
- MSM51V16405F-50SJ
- MSM5117800F-60JS
- MSM511664CL-80JS
- MR16R162GEG0-CM8DF
- MH28D72KLG-75A
- MB8264A-12-WZ
- MB8516SR72CA-103DG
- MB8264A-10Z
- MB81464-12CV
- MB81464-15P
- MB8264A-10M
- M5M44265CJ-6ST
- M5M417400CTP-7T
- M5M44260CJ-6T
- M5M417400CJ-5T
- M5M44265CTP-5T
- M5M44800CJ-6T
- M5M44260CJ-5T
- M5M44400BRT-8T
- M5M4V4265CTP-6ST
- M5M44400BRT-8ST
- M5M44260CTP-5T
- M5M417400CJ-6ST
- M5M44265CJ-7T
- M5M44800CTP-6ST
- M5M44800CJ-7T
- M5M4V4265CTP-6T
- M5M44800CTP-6T
- M5M417400CJ-7T
- M5M44265CTP-7ST
- M5M44800CJ-6ST
- M5M417400CTP-6ST
- M5M44400BRT-6T
- M5M44265CTP-6ST
- M52S128168A-7.5BIG
- M470T3354CZ0-LCC
- M393T5660AZ3-CCC
- M393T6453FG0-CCC
什么是DRAM
- DRAM(动态随机存储器)在日常生活中还有一个亲切称呼叫内存条,利用电容储存电荷多少来存储数据,需要定时刷新电路克服电容漏电问题,读写速 度比SRAM慢,常用于容量大的主存储器,如计算机、智能手机、服务器内存等。