
图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
A42L0616S-45F | ![]() |
DRAM | EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, SOJ-42 | ![]() |
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A42L0616V-45 | ![]() |
DRAM | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 1M ×16的CMOS动态的, EDO页模式内存 |
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A42L0616V-45F | ![]() |
DRAM | EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, TSOP2-50/44 | ![]() |
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A42L0616V-45U | ![]() |
DRAM | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 1M ×16的CMOS动态的, EDO页模式内存 |
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A42L0616V-45UF | ![]() |
DRAM | EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, TSOP2-50/44 | ![]() |
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A42L0616V-50 | ![]() |
DRAM | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 1M ×16的CMOS动态的, EDO页模式内存 |
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A42L0616V-50F | ![]() |
DRAM | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, TSOP2-50/44 | ![]() |
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A42L2604S-45 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42L2604S-50 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42L2604S-50F | ![]() |
DRAM | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24 | ![]() |
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A42L2604V-45 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42L2604V-45F | ![]() |
DRAM | EDO DRAM, 4MX4, 45ns, CMOS, PDSO24, TSOP2-26/24 | ![]() |
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A42L2604V-45U | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42L2604V-50F | ![]() |
DRAM | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24 | ![]() |
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A42L2604V-50U | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42L2604V-50UF | ![]() |
DRAM | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24 | ![]() |
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A42L8316S-35 | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A42L8316S-35F | ![]() |
DRAM | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, SOJ-40 | ![]() |
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A42L8316S-40F | ![]() |
DRAM | EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, SOJ-40 | ![]() |
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A42L8316V-35F | ![]() |
DRAM | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A42L8316V-35UF | ![]() |
DRAM | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A42L8316V-40 | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A42L8316V-40F | ![]() |
DRAM | EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, TSOP2-44/40 | ![]() |
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A42L8316V-40U | ![]() |
DRAM | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 256K ×16的CMOS动态RAM与EDO页模式 |
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A42U0616S-50 | ![]() |
DRAM | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 1M ×16的CMOS动态的, EDO页模式内存 |
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A42U2604S-50 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42U2604S-80 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42U2604V-50 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42U2604V-50U | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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A42U2604V-60 | ![]() |
DRAM | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE 与EDO页模式4M X 4 CMOS动态RAM |
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DRAM 热门型号
- M393T5663AZ3-CCC
- M381L3223FTM-CAA
- M393T6553BG0-CD5
- M368L6423FUN-CAA
- M393T6553BZ0-CD5
- M393T2953BG3-CD5
- M391T6453FG0-LCC
- M391B5773DH0-CMA
- M383L6423ETS-CAA
- M2V56S20ATP-7UL
- M381L6423ETM-LCC
- M368L6423EUM-CCC
- M368L2923BUN-CAA
- M368L2923FLN-CCC
- M312L6423EUS-CAA
- M2V56S40ATP-6L
- M2V56S40AKT-5L
- M2V56S40AKT-6L
- M2V56S30AKT-6L
- M2V56S30AKT-5L
- M2V56S20ATP-7L
- M2V56S40AKT-6UL
- M2V56S20ATP-6UL
- M2V56S40ATP-6UL
- M2V56S30ATP-6L
- M2V56S40ATP-5UL
- M12L128168A-7TG2S
- M12L64322A-5TG2S
- M12L64164A-7TG2M
- M12L64322A-7TG2S
- M12L2561616A-6BG2A
- M12L128168A-7TG2N
- KM416S4030CT-GHKZ
- KMM366S1623DTL-G
- KMM366S1623BTL-GH
- KM48S8030CT-GLTH
- KM48S16030BT-FL
- KM48S8030CT-GHZ
- KM48S8030DT-GH
- KM416S4030CT-GHK
- KMM374S403CT-GL
- KMM374S403CTS-GL
- KMM374S403CTS-GH
- KM416S8030BT-FL
- KM432S2030BT-G/FL
- KM44S32030BT-FH
- KM48S8030DT-GA
- KM48S8030DT-FA
- KM48S16030AT-GL
- KM416S1120DT-GC
- KM416S8030AT-G/FH
- K4T51043QC-ZLE7T
- K4M28163LH-BN1LT
- K4H280838C-TLA0T
- K4X51323PC-8ECAT
- K4T51083QC-ZLCCT
- K4T51083QC-ZCE6T
- K4S641632E-TC70T
- K4M51163LC-RN75T
- K4M51163LC-RG1LT
- K4T51043QC-ZCE7T
- K4M56163PG-BG1LT
- K4H560838E-NCB3T
- K4H560438E-TCA2T
- K4H560438E-NCB0T
- K4H511638D-UCCCT
- K4H510838C-UCB0T
- K4X51323PC-7EC3T
- K4T56043QF-ZCCC
- K4T51043QC-ZCE6T
- K4T51043QC-ZCCCT
- K4S643232C-TC70T
- K4S640832E-TC1LT
- K4T51043QE-ZLCC
- K4S641632E-TC1HT
- K4S281632B-TC75T
- K4H281638B-TLA0T
- K4H280838D-TCA2T
- K4R881869M-NCK8T
- K4M51323PC-SC75T
- K4M51323PC-SC1LT
- K4M28163LH-RN75T
- K4S643232E-TI60T
- K4H510838C-ZCB3T
- K4X51323PC-8GCAT
- K4T51043QC-ZLCCT
- K4S560832E-TC75T
- K4Y50164UC-JCB3T
- K4X56323PG-8ECAT
- K4M56163PG-BC1LT
- K4H511638C-ZLCCT
- K4H511638C-UCB3T
- K4S161622E-TC70T
- K4M56163PG-BG90T
- K4M51323PC-SF1LT
- K4M51163LC-RN1LT
- K4R441869B-NCG6T
- K4T56083QF-GCCC
- K4S161622E-TC80T
- K4M28163PH-RF90T
什么是DRAM
- DRAM(动态随机存储器)在日常生活中还有一个亲切称呼叫内存条,利用电容储存电荷多少来存储数据,需要定时刷新电路克服电容漏电问题,读写速 度比SRAM慢,常用于容量大的主存储器,如计算机、智能手机、服务器内存等。