AP9960GH-HF_14 [A-POWER]
Simple Drive Requirement;
| 型号： | AP9960GH-HF_14 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9963GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
40V
4mΩ
160A
▼ Low On-resistance
▼ Fast Switching Characteristic
G
▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V3
Pulsed Drain Current1
160
A
80
A
80
A
300
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation4
187
W
W
℃
℃
3.75
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
TJ
Thermal Data
Symbol
Parameter
Value
0.8
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
40
Data and specifications subject to change without notice
1
201201061
AP9963GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
4
5
mΩ
mΩ
V
GS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=32V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
80
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
-
+100
Qg
25
6.5
14
11
62
30
9
40
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=32V
VGS=4.5V
-
VDS=20V
-
ID=30A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=2.4Ω
-
VGS=10V
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
2800 4500
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
590
165
1.6
-
-
f=1.0MHz
f=1.0MHz
3.2
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=40A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
Reverse Recovery Time
Reverse Recovery Charge
41
47
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9963GS-HF
300
250
200
150
100
50
160
120
80
T C =175 o C
10V
T C =25 o C
10V
7.0V
6.0V
5.0V
7.0V
6.0V
5.0V
V
G =4.0V
V
G = 4. 0V
40
0
0
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.4
0.8
0.2
4.2
3.8
3.4
3
I D =40A
I D =30A
V
G =10V
T
C =25 ℃
Ω
2.6
-50
0
50
100
150
200
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.6
1.2
0.8
0.4
0.0
T j =175 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9963GS-HF
f=1.0MHz
10
4000
3000
2000
1000
0
I D =30A
8
V
DS =20V
DS =24V
C iss
V
6
4
2
0
V
DS =32V
C oss
C rss
0
10
20
30
40
50
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor = 0.5
Operation in this area
limited by R
DS(ON)
100us
1ms
0.2
0.1
0.1
0.05
PDM
t
10ms
100ms
DC
0.02
T
0.01
Duty Factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
1
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
150
100
50
VG
QG
4.5V
QGS
QGD
Limited by package
Q
Charge
0
25
50
75
100
125
150
175
T C , Case Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
相关型号：
AP9962AGH-HF
TRANSISTOR 32 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
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