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AP9T15GJ-HF [A-POWER]

TRANSISTOR POWER, FET, FET General Purpose Power;
AP9T15GJ-HF
型号： AP9T15GJ-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR POWER, FET, FET General Purpose Power
文件： 总4页 (文件大小：94K)
中文：  中文翻译
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AP9T15GH/J-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
20V  
D
S
▼ Capable of 2.5V Gate Drive  
50mΩ  
12.5A  
▼ Single Drive Requirement  
G
▼ RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G
D
S
TO-252(H)  
G
D
TO-251(J)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Rating  
Units  
V
VDS  
VGS  
20  
+16  
V
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
12.5  
8
A
A
60  
A
PD@TC=25℃  
Total Power Dissipation  
12.5  
0.1  
W
Linear Derating Factor  
Total Power Dissipation3  
W/℃  
W
PD@TA=25℃  
2
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
℃
℃
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
10  
Rthj-a  
62.5  
110  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
Data and specifications subject to change without notice  
1
201009303  
AP9T15GH/J-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A  
VGS=0V, ID=250uA  
20  
-
-
-
-
-
V
50  
80  
mΩ  
mΩ  
V
GS=2.5V, ID=5.2A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=10A  
0.5  
-
-
10  
-
1.5  
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
VDS=20V, VGS=0V  
-
1
Drain-Source Leakage Current (Tj=125oC) VDS=16V ,VGS=0V  
-
-
250  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+16V, VDS=0V  
ID=10A  
-
-
+100  
Qg  
-
5
8
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=16V  
-
1
VGS=4.5V  
VDS=10V  
-
2
-
8
ID=10A  
-
55  
10  
3
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=5V  
RD=1Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
360 580  
VDS=20V  
-
70  
50  
-
-
-
f=1.0MHz  
f=1.0MHz  
-
-
1.67  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=10A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
17  
9
1.3  
V
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9T15GH/J-HF  
50  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
T C = 150 o  
C
T
C =25 o  
C
5.0V  
4.5V  
5.0V  
4.5V  
3.5V  
3.5V  
2.5V  
2.5V  
V G =1.5V  
V G =1.5V  
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
45  
43  
41  
39  
37  
35  
33  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =6A  
I D = 5.2 A  
V
G =4.5V  
T
C =25 o  
C
Ω
0
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
8
6
T j =150 o  
C
T j =25 o  
C
4
2
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9T15GH/J-HF  
f=1.0MHz  
C iss  
14  
1000  
100  
10  
I D =10A  
12  
V
V
V
DS =10V  
DS =12V  
DS =16V  
10  
8
6
C oss  
C rss  
4
2
0
0
2
4
6
8
10  
12  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
10  
1
Duty factor = 0.5  
Operation in this  
area limited by  
RDS(ON)  
100us  
1ms  
0.2  
0.1  
0.1  
0.05  
10ms  
100ms  
DC  
PDM  
0.02  
t
T
0.01  
T c =25 o  
Single Pulse  
C
Duty Factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.01  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
t
Q
td(on)  
d(off)tf  
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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