AO8801A [AOS]
20V P-Channel MOSFET; 20V P沟道MOSFET
| 型号： | AO8801A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO8801A
20V P-Channel MOSFET
General Description
Product Summary
VDS
-20V
The AO8801A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
ID (at VGS=-10V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
RDS(ON) (at VGS= -1.8V)
-4.5A
< 42mΩ
< 54mΩ
< 68mΩ
ESD Protected
D1
D2
TSSOP8
Top View
Bottom View
Top View
8
D2
S2
S2
G2
D1
S1
S1
G1
1
2
3
4
7
6
5
G1
G2
S1
S2
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
-4.5
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-3.6
Pulsed Drain Current C
IDM
PD
-30
TA=25°C
TA=70°C
1.5
W
°C
Power Dissipation B
0.96
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
63
Max
83
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
101
64
130
83
RθJL
Rev 1: Sep 2011
www.aosmd.com
Page 1 of 5
AO8801A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±8V
VDS=VGS, ID=-250µΑ
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4.5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-0.9
µA
V
VGS(th)
ID(ON)
-0.3
-30
-0.57
A
35
49
42
59
54
68
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-3A
VDS=-5V, ID=-4.5A
IS=-1A,VGS=0V
43
mΩ
mΩ
S
54
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
20
-0.64
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
600
80
48
6
751
115
80
905
150
115
20
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
13
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.4
0.8
1.3
9.3
1
11
1.2
3.1
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-4.5A
2.2
13
9
VGS=-4.5V, VDS=-10V, RL=2.2Ω,
RGEN=3Ω
tD(off)
tf
19
29
26
51
trr
IF=-4.5A, dI/dt=500A/µs
IF=-4.5A, dI/dt=500A/µs
20
40
32
62
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Sep 2011
www.aosmd.com
Page 2 of 5
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
15
-8V
-4.5V
VDS=-5V
35
30
25
20
15
10
5
-3.0V
-2.5V
12
9
-2.0V
6
3
125°C
25°C
VGS=-1.5V
4
0
0
0
0.5
1
1.5
2
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
80
1.60
1.40
1.20
1.00
0.80
ID=-4.5A, VGS=-4.5V
ID=-4A, VGS=-2.5V
70
60
50
40
30
20
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
ID=-3A, VGS=-1.8V
0
25
50
75
100
125
150
175
0
2
4
6
8
10
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
120
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=-4.5A
100
80
125°C
25°C
60
125°C
25°C
40
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Sep 2011
www.aosmd.com
Page 3 of 5
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=-10V
ID=-4.5A
Ciss
Coss
Crss
0
5
10
15
20
0
2
4
6
8
10
12
-VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
30
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
20
10
0
100µs
1ms
10ms
100ms
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.001
0.1
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=130°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Sep 2011
www.aosmd.com
Page 4 of 5
AO8801A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 1: Sep 2011
www.aosmd.com
Page 5 of 5
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