AO8801L [AOS]
Dual P-Channel Enhancement Mode Field Effect Transistor; 双P沟道增强型场效应晶体管
| 型号： | AO8801L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8801 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8801L is a Green Product ordering option. AO8801
and AO8801L are electrically identical.
VDS (V) = -20V
ID = -4.7 A (VGS = -4.5V)
RDS(ON) < 42mΩ (VGS = -4.5V)
RDS(ON) < 53mΩ (VGS = -2.5V)
RDS(ON) < 70mΩ (VGS = -1.8V)
ESD Rating: 3000V HBM
D
D2
S2
TSSOP-8
Top View
D2
S2
S2
G2
1
2
3
4
8
7
6
5
D1
S1
S1
G1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-20
±8
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
V
A
TA=25°C
TA=70°C
-4.7
ID
-3.7
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
73
Max
Units
°C/W
°C/W
°C/W
t ≤ 10s
90
125
75
RθJA
Steady-State
Steady-State
96
RθJL
63
Alpha & Omega Semiconductor, Ltd.
AO8801
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-16V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
µA
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
±1
±10
-1
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-0.3
-25
-0.55
V
GS=-4.5V, VDS=-5V
A
VGS=-4.5V, ID=-4.7A
35
47
42
57
53
70
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
V
GS=-2.5V, ID=-4A
44
VGS=-1.8V, ID=-2A
VDS=-5V, ID=-4.7A
IS=-1A,VGS=0V
54
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
8
16
-0.78
-1
V
Maximum Body-Diode Continuous Current
-2.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1450
205
160
6.5
pF
pF
pF
Ω
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
17.2
1.3
4.5
9.5
17
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-4A
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
tD(off)
tf
94
35
trr
IF=-4A, dI/dt=100A/µs
IF=-4A, dI/dt=100A/µs
31
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
13.8
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO8801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
25
20
15
10
5
-4.5V
-3.0V
-8V
VDS=-5V
-2.0V
6
-2.5V
125°C
4
VGS=-1.5V
2
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
60
40
20
1.6
1.4
1.2
1.0
0.8
ID=-4.7A, VGS=-2.5V
ID=-2A, VGS=-1.8V
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
ID=-4.7A, VGS=-4.5V
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
125°C
ID=-4.7A
25°C
125°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO8801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
5
4
3
2
1
0
VDS=-10V
ID=-4.7A
2000
1600
1200
800
400
0
Ciss
Coss
Crss
0
5
10
15
20
0
5
10
15
20
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1s
1s
10s
1
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/(Ton+T)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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