AOB436 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
AOB436
型号: AOB436
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

N-Channel Enhancement Mode Field Effect Transistor
N沟道增强型网络场效晶体管

晶体 晶体管
文件: 总5页 (文件大小:131K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AOB436  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOB436 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load  
switching and general purpose applications. Standard  
product AOB436 is Pb-free (meets ROHS & Sony  
259 specifications). AOB436L is a Green Product  
ordering option. AOB436 and AOB436L are  
electrically identical.  
VDS (V) = 25V  
ID = 55A (VGS = 10V)  
RDS(ON) < 7 m(VGS = 10V)  
RDS(ON) < 11 m(VGS = 4.5V)  
TO-263  
D2-PAK  
D
S
Top View  
Drain Connected to  
Tab  
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
25  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
V
A
TC=25°C  
55  
TC=100°C  
ID  
55  
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
EAR  
150  
30  
A
45  
mJ  
TC=25°C  
50  
PD  
W
Power Dissipation B  
TC=100°C  
25  
3
TA=25°C  
PDSM  
W
Power Dissipation A  
TA=70°C  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
10  
Max  
15  
50  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
41  
Steady-State  
Steady-State  
RθJC  
1.9  
Alpha & Omega Semiconductor, Ltd.  
AOB436  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250uA, VGS=0V  
VDS=20V, VGS=0V  
25  
V
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
VDS=0V, VGS=±20V  
VDS=VGS, ID=250µA  
VGS=10V, VDS=5V  
100  
3
nA  
V
VGS(th)  
ID(ON)  
1
1.8  
100  
A
VGS=10V, ID=30A  
5.7  
8
7
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
mΩ  
V
GS=4.5V, ID=30A  
DS=5V, ID=30A  
9
11  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
V
53  
0.73  
S
V
A
IS=1A, VGS=0V  
1
Maximum Body-Diode Continuous Current  
50  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1850  
472  
2220  
pF  
pF  
pF  
V
GS=0V, VDS=12.5V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
275  
VGS=0V, VDS=0V, f=1MHz  
0.86  
1.5  
40  
SWITCHING PARAMETERS  
Qg(10V)  
Total Gate Charge  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
34  
16.8  
7
nC  
nC  
nC  
nC  
ns  
Qg(4.5V)  
VGS=10V, VDS=12.5V, ID=30A  
Qgs  
Qgd  
tD(on)  
tr  
8.5  
7.5  
33  
VGS=10V, VDS=12.5V,  
ns  
RL=0.39, RGEN=3Ω  
tD(off)  
tf  
25  
ns  
22  
ns  
trr  
IF=30A, dI/dt=100A/µs  
IF=30A, dI/dt=100A/µs  
32  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
38  
ns  
Qrr  
19  
nC  
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The  
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on  
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.  
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper  
dissipation limit for cases where additional heatsinking is used.  
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.  
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a  
maximum junction temperature of T J(MAX)=175°C.  
G. The maximum current rating is limited by bond-wires.  
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA  
curve provides a single pulse rating.  
Rev 0 : Aug 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
AOB436  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
10V  
6V  
VDS=5V  
5V  
4.5V  
4.0V  
25°C  
125°C  
VGS=3.5  
0
1
2
3
4
5
1
2
3
4
5
VGS(Volts)  
VDS (Volts)  
Figure 2: Transfer Characteristics  
Fig 1: On-Region Characteristics  
12  
10  
8
1.8  
1.6  
1.4  
1.2  
1
VGS=4.5V  
VGS=10V, 30A  
6
VGS=4.5V, 30A  
4
VGS=10V  
2
0.8  
0
10  
20  
30  
40  
50  
60  
0
25  
50  
75  
100  
125  
150  
175  
I
D (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage  
Figure 4: On-Resistance vs. Junction Temperature  
16  
14  
100  
10  
ID=30A  
125°C  
1
125°C  
12  
10  
8
0.1  
0.01  
25°C  
0.001  
0.0001  
0.00001  
25°C  
6
4
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
3
4
5
6
7
8
9
10  
V
SD (Volts)  
VGS (Volts)  
Figure 6: Body-Diode Characteristics  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
AOB436  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
3000  
2500  
2000  
1500  
1000  
500  
10  
8
VDS=12.5V  
ID=30A  
Ciss  
6
4
Coss  
2
Crss  
0
0
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
Qg (nC)  
VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: CapacitanceCharacteristics  
1000  
100  
10  
200  
160  
120  
80  
TJ(Max)=175°C, TA=25°C  
10µs  
TJ(Max)=175°C  
TA=25°C  
100µs  
DC  
1ms  
RDS(ON)  
limited  
1
40  
0
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-to-  
Case (Note F)  
Figure 9: Maximum Forward Biased  
Safe Operating Area (Note E)  
10  
1
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
D=Ton/T  
TJ,PK=TC+PDM.ZθJC.RθJC  
RθJC=3°C/W  
PD  
0.1  
Ton  
T
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
0.1  
1
10  
100  
Alpha & Omega Semiconductor, Ltd.  
AOB436  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
60  
50  
40  
30  
20  
60  
50  
40  
30  
20  
10  
0
L ID  
tA  
=
BV VDD  
TA=25°C  
10  
0.000001  
0.00001  
Time in avalanche, tA (s)  
Figure 12: Single Pulse Avalanche capability  
0.0001  
0.001  
0
25  
50  
75  
100  
125  
150  
175  
TCASE (°C)  
Figure 13: Power De-rating (Note B)  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
TA=25°C  
0
25  
50  
75  
100  
125  
150  
175  
0.01  
0.1  
1
10  
100  
1000  
TCASE (°C)  
Pulse Width (s)  
Figure 14: Current De-rating (Note B)  
Figure 15: Single Pulse Power Rating Junction-to-  
Ambient (Note H)  
10  
1
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
Single Pulse  
0.1  
D=Ton/T  
PD  
0.01  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=50°C/W  
Ton  
T
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)  
Alpha & Omega Semiconductor, Ltd.  

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