AOB436 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB436 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB436 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOB436 is Pb-free (meets ROHS & Sony
259 specifications). AOB436L is a Green Product
ordering option. AOB436 and AOB436L are
electrically identical.
VDS (V) = 25V
ID = 55A (VGS = 10V)
RDS(ON) < 7 mΩ (VGS = 10V)
RDS(ON) < 11 mΩ (VGS = 4.5V)
TO-263
D2-PAK
D
S
Top View
Drain Connected to
Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
V
A
TC=25°C
55
TC=100°C
ID
55
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
150
30
A
45
mJ
TC=25°C
50
PD
W
Power Dissipation B
TC=100°C
25
3
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
10
Max
15
50
3
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
41
Steady-State
Steady-State
RθJC
1.9
Alpha & Omega Semiconductor, Ltd.
AOB436
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=20V, VGS=0V
25
V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
100
A
VGS=10V, ID=30A
5.7
8
7
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
V
GS=4.5V, ID=30A
DS=5V, ID=30A
9
11
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
53
0.73
S
V
A
IS=1A, VGS=0V
1
Maximum Body-Diode Continuous Current
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1850
472
2220
pF
pF
pF
Ω
V
GS=0V, VDS=12.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
275
VGS=0V, VDS=0V, f=1MHz
0.86
1.5
40
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
34
16.8
7
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=10V, VDS=12.5V, ID=30A
Qgs
Qgd
tD(on)
tr
8.5
7.5
33
VGS=10V, VDS=12.5V,
ns
RL=0.39Ω, RGEN=3Ω
tD(off)
tf
25
ns
22
ns
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
32
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
38
ns
Qrr
19
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
60
50
40
30
20
10
0
10V
6V
VDS=5V
5V
4.5V
4.0V
25°C
125°C
VGS=3.5
0
1
2
3
4
5
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
12
10
8
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V, 30A
6
VGS=4.5V, 30A
4
VGS=10V
2
0.8
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
16
14
100
10
ID=30A
125°C
1
125°C
12
10
8
0.1
0.01
25°C
0.001
0.0001
0.00001
25°C
6
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
V
SD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
VDS=12.5V
ID=30A
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: CapacitanceCharacteristics
1000
100
10
200
160
120
80
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
100µs
DC
1ms
RDS(ON)
limited
1
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
60
50
40
30
20
10
0
L ⋅ ID
tA
=
BV −VDD
TA=25°C
10
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
40
30
20
10
0
60
50
40
30
20
10
0
TA=25°C
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.1
D=Ton/T
PD
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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