AOB440 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOB440 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB440
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB440 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in UPS, high
current switching applications. Standard Product
AOB440 is Pb-free (meets ROHS & Sony 259
specifications).
VDS (V) = 60V
ID = 75 A
(VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
TO-263
D2-PAK
D
S
Top View
Drain Connected to
Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
Continuous Drain
CurrentG
±20
75
V
A
TC=25°C
TC=100°C
ID
75
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
150
80
A
320
mJ
TC=25°C
Power Dissipation B
TC=100°C
150
PD
W
75
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
8
12
°C/W
t≤10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
35
45
1
°C/W
°C/W
Steady-State
Steady-State
RθJA
RθJC
0.7
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
60
V
V
DS=60V, VGS=0V
10
µA
50
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
100
4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=30A
2
3
150
A
6.3
10.5
90
7.5
13
RDS(ON)
Static Drain-Source On-Resistance
mΩ
TJ=125°C
gFS
VSD
IS
V
DS=5V, ID=30A
Transconductance
S
V
A
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
IS=1A, VGS=0V
0.7
1
55
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3800 4560
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
430
190
V
GS=0V, VDS=0V, f=1MHz
1.5
2.3
88
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
68
33
15
19
18
35
44
23
53
98
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=30V, ID=30A
VGS=10V, VDS=30V, RL=1Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
64
ns
Qrr
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: May. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
125
100
75
100
80
60
40
20
0
VDS=5V
10V
6V
5V
4.5V
125°C
50
25°C
25
VGS=4V
-40°C
4.5
0
0
1
2
3
4
5
2
2.5
3
3.5
4
5
5.5
V
DS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
2.2
2
7.2
7
1.8
1.6
1.4
1.2
1
6.8
6.6
6.4
6.2
6
VGS=10V
VGS=10V, 30A
0.8
0.6
0
20
40
60
80
100
-50 -25
0
25 50 75 100 125 150 175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
25
20
15
10
5
100
ID=30A
10
1
125°C
125°C
25°C
0.1
25°C
0.01
0.001
0.0001
-40°C
-40°C
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS (Volts)
V
SD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
5
4
3
2
1
0
10
8
VDS=30V
ID=30A
Ciss
6
4
Crss
2
Coss
30
0
0
15
45
60
0
20
40
60
80
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
1000
100
10
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
TJ(Max)=175°C
TC=25°C
DC
1
0.00001
0.001
0.1
10
1
10
100
VDS (V)
Pulse Width (s)
Figure 9: Maximun Forward Biased Safe Operating
Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.0°C/W
1
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
200
150
100
50
50
40
30
20
10
0
0
0
25
50
75
CASE (°C)
Figure 12: Current De-rating (Note B)
100
125
150
175
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
T
T
150
TA=25°C
125
100
75
TA=150°C
50
25
0
0.000001
0.00001
Time in avalanche, tA (s)
Figure 10: Single Pulse Avalanche capability
0.0001
0.001
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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