AOD410 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD410 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD410
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD410ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto
provideꢀexcellentꢀRDS(ON)ꢀandꢀlowꢀgateꢀcharge.ꢀThis
deviceꢀisꢀsuitableꢀforꢀuseꢀasꢀaꢀloadꢀswitchꢀorꢀinꢀPWM
applications.
VDSꢀ(V)ꢀ=ꢀ30V
IDꢀ=ꢀ8Aꢀ(VGSꢀ=ꢀ10V)
R
DS(ON)ꢀ<ꢀ65mΩꢀꢀꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<ꢀ105mΩꢀ(VGSꢀ=ꢀ4.5V)
ꢀꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Bottom View
Top View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
30
V
GateꢁSourceꢀVoltage
VGS
±20
V
A
TC=25°C
8
ContinuousꢀDrain
CurrentꢀG
PulsedꢀDrainꢀCurrentꢀB
AvalancheꢀCurrentꢀC
TC=100°C
ID
6
20
IDM
IAR
EAR
8
A
RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀC
10
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
25
PD
W
12.5
2.1
TA=25°C
PDSM
W
PowerꢀDissipationꢀA
1.33
ꢁ55ꢀtoꢀ175
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
°C
Thermal Characteristics
Parameter
Symbol
Typ
20
Max
30
60
7
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁCaseꢀC
SteadyꢁState
SteadyꢁState
46
RθJL
5.3
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD410
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
VGS(th)
ID(ON)
1
1.8
10
A
48
76
65
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
100
105
VGS=4.5V, ID=2A
VDS=5V, ID=8A
IS=1A,VGS=0V
75
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
6.2
0.75
1
V
Maximum Body-Diode Continuous Current
4.3
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
288
57
39
3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
6.72
3.34
0.76
1.78
3.7
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
3.7
ns
tD(off)
tf
15.6
2.6
ns
ns
IF=8A, dI/dt=100A/µs
IF=8A, dI/dt=100A/µs
trr
12.6
5.1
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature for 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
10
8
10V
8V
5V
6V
VDS=5V
4.5V
6
4V
4
125°C
3.5V
25°C
2
VGS=3V
0
0
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
90
80
70
60
50
40
2
1.8
1.6
1.4
1.2
1
ID=8A
VGS=4.5V
VGS=4.5V
VGS=10V
VGS=10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
175
150
125
100
75
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
ID=8A
125°C
125°C
25°C
25°C
1.0E-04
50
1.0E-05
25
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
400
300
200
100
0
10
8
VDS=15V
ID=8A
Ciss
6
4
Coss
Crss
2
0
0
1
2
3
4
5
6
7
8
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
TJ(Max)=150°C
TA=25°C
10µs
20
10
0
1ms
RDS(ON)
limited
100µs
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.1
0.1
1
10
100
V
(Volts)
Figure 9: MaximumDFSorward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD410
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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