AON4407L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AON4407L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4407L
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4407L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch.
VDS (V) = -12V
ID = -9 A
(VGS = -4.5V)
R
R
R
DS(ON) < 20mΩ (VGS = -4.5V)
DS(ON) < 25mΩ (VGS = -2.5V)
DS(ON) < 31mΩ (VGS = -1.8V)
-RoHS Compliant
-Halogen Free
ESD Protected!
DFN 3x2
D
Top View
Bottom View
Pin 1
D
D
D
G
D
Rg
D
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
-12
V
V
VGS
Gate-Source Voltage
±8
-9
TA=25°C
TA=70°C
Continuous Drain
Current
Pulsed Drain Current C
ID
-7
A
IDM
-60
TA=25°C
TA=70°C
2.5
Power Dissipation B
PD
W
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Symbol
Typ
42
Max
50
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady State
Steady State
74
90
RθJL
25
30
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-12
V
VDS=-12V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
µA
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
±10
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.35
-60
-0.5
-0.85
V
A
V
GS=-4.5V, VDS=-5V
GS=-4.5V, ID=-9A
V
16.5
22
20
26
25
31
38
mΩ
TJ=125°C
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-8.5A
20
VGS=-1.8V, ID=-7.5A
VGS=-1.5V, ID=-7A
VDS=-5V, ID=-9A
IS=-1A,VGS=0V
24
29
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
45
S
V
A
-0.53
-1
Maximum Body-Diode Continuous Current
-2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1740 2100
pF
pF
VGS=0V, VDS=-6V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
334
200
pF
kΩ
VGS=0V, VDS=0V, f=1MHz
1.3
1.7
23
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
19
4.5
5.3
240
580
7
nC
nC
nC
ns
VGS=-4.5V, VDS=-6V, ID=-9A
VGS=-4.5V, VDS=-6V, RL=0.67Ω,
ns
µs
RGEN=3Ω
tD(off)
tf
µs
4.2
22
trr
IF=-9A, dI/dt=100A/µs
IF=-9A, dI/dt=100A/µs
27
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
17
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board
with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Aug 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
-4.5V
-2.5V
VDS=-5V
50
40
30
20
10
0
50
40
30
20
10
0
-3V
-2V
125°C
VGS=-1.5V
25°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics(Note E)
Figure 1: On-Region Characteristics(Note E)
45
40
35
30
25
20
15
10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VGS=-1.5V
VGS=-4.5V
ID=-9A
VGS=-2.5V
VGS=-1.8V
VGS=-1.8V
ID=-7.5A
VGS=-1.5V
ID=-7A
VGS=-4.5V
141618
0
2
4
6
8
10 12
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage(Note E)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
50
1E+01
1E+00
1E-01
1E-02
ID=-9A
45
40
35
30
25
125°C
125°C
25°C
1E-03
20
1E-04
15
25°C
10
1E-05
0
2
4
6
8
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
4.5
4
VDS=-6V
ID=-9A
2400
2000
1600
1200
800
400
0
3.5
3
Ciss
2.5
2
1.5
1
Coss
0.5
0
Crss
0
4
8
12
16
20
0
2
4
6
8
10
12
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
10
10µs
TJ(Max)=150°C
TA=25°C
1ms
RDS(ON)
limited
10ms
1
100mss
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
1
0.00001
0.001
0.1
10
1000
0.01
100
0.01
0.1
1
-VDS (Volts)
10
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to
Ambient (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
T
1
0.1
P
D
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关型号：
©2020 ICPDF网 联系我们和版权申明