AON6564 [AOS]
30V N-Channel AlphaMOS; 30V N通道AlphaMOS
| 型号： | AON6564 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel AlphaMOS |
| 文件： | 总6页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6564
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
32A
< 5mΩ
< 8.5mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
100% UIS Tested
100% Rg Tested
• Isolated DC/DC Converters in Telecom and Industrial
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
3
7
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
32
V
V
VGS
TC=25°C
Continuous Drain
CurrentG
ID
TC=100°C
25
A
Pulsed Drain Current C
IDM
128
TA=25°C
TA=70°C
29
Continuous Drain
Current
IDSM
A
23
Avalanche Current C
IAS
36
A
mJ
V
Avalanche energy L=0.05mH C
EAS
32
VDS Spike
100ns
VSPIKE
36
TC=25°C
TC=100°C
TA=25°C
TA=70°C
25
PD
W
Power Dissipation B
Power Dissipation A
10
6
PDSM
W
°C
3.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
17
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
21
53
5
RθJA
Steady-State
Steady-State
44
RθJC
3.5
Rev0: Dec, 2012
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Page 1 of 6
AON6564
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
VDS=0V, VGS= ±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
100
2.4
5
nA
V
VGS(th)
1.6
2
4
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
5.4
6.7
83
0.7
7
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
8.5
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
30
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1300
530
75
1550
700
130
2.3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.7
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18.3
8.5
33
17
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.8
2.5
7.5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.8
ns
tD(off)
tf
23.3
4.5
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
25
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec, 2012
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Page 2 of 6
AON6564
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
4.5V
6V
VDS=5V
8V
4V
3.5V
125°C
25°C
VGS=3V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=20A
6
4
VGS=10V
VGS=4.5V
2
ID=20A
0
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
12
9
1.0E+02
ID=20A
1.0E+01
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6
25°C
3
25°C
0
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Dec, 2012
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Page 3 of 6
AON6564
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
Ciss
VDS=15V
ID=20A
8
6
4
Coss
2
Crss
0
0
5
10
Qg (nC)
15
20
0
5
10
15
20
25
30
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Dec, 2012
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Page 4 of 6
AON6564
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
30
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
1E-05
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=53°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Dec, 2012
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Page 5 of 6
AON6564
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev0: Dec, 2012
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Page 6 of 6
相关型号：
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AOS
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